UNISONIC TECHNOLOGIES CO., LTD
UT9564
-40V, -7.3A P-CHANNEL
ENHANCEMENT MODE POWER
MOSFET
1
DESCRIPTION
TO-252
Power MOSFET
The UTC
UT9564
is a P-ch enhancement mode power MOSFET
and it uses UTC perfect technology to provide customers with fast
switching, ruggedized device design, low on-resistance and
cost-effectiveness.
The UTC
UT9564
is ideal for applications such as low voltage
applications, DC/DC converters and all commercial-industrial surface
mount applications.
SOP-8
FEATURES
* Simple Drive Requirement
* Fast Switching Speed
* Low On-Resistance
SYMBOL
ORDERING INFORMATION
Package
TO-252
SOP-8
1
G
S
Pin Assignment
2 3 4 5 6 7
D S - - -
-
S S G D D D
Packing
8
- Tape Reel
D Tape Reel
Ordering Number
Lead Free
Halogen Free
UT9564L-TN3-R
UT9564G-TN3-R
-
UT9564G-S08-R
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-390.E
UT9564
MARKING
TO-252
SOP-8
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R502-390.E
UT9564
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
DS
V
GS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Power MOSFET
RATINGS
UNIT
-40
V
±25
V
T
A
=25°C
-7.3
A
I
D
Continuous Drain Current (Note 2)
T
A
=70°C
-5.9
A
Pulsed Drain Current (Note 1)
I
DM
-30
A
TO-252
2
Power Dissipation (T
A
=25°C)
P
D
W
SOP-8
2.5
Linear Derating Factor
0.02
W/°C
Junction Temperature
T
J
-55 ~150
°C
Storage Temperature
T
STG
-55 ~150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
50
UNIT
Junction to Ambient (Note 2)
TO-252
θ
JA
°C/W
SOP-8
Notes: 1. Pulse width limited by Max. junction temperature.
2. Surface mounted on 1 in
2
copper pad of FR4 board, t
≤10sec;
125°C /W when mounted on Min. copper
pad.
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
UNIT
V
V/°C
µA
nA
V
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
nC
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=-250µA, V
GS
=0V
-40
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25°C, I
D
=-1mA
-0.03
V
DS
=-40V, V
GS
=0V, T
J
=25°C
-1
Drain-Source Leakage Current
I
DSS
-25
V
DS
=-32V, V
GS
=0V, T
J
=70°C
Gate- Source Leakage Current
I
GSS
V
GS
=±25V
±100
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=-250µA
-1
-3
Static Drain-Source On-State Resistance
V
GS
=-10V, I
D
=-7A
28
R
DS(ON)
(Note)
V
GS
=-4.5V, I
D
=-5A
40
Forward Transconductance
g
FS
V
DS
=-10V, I
D
=-7A
13
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
2240 3600
V
GS
=0V, V
DS
=-25V,
Output Capacitance
C
OSS
300
f=1.0MHz
250
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge (Note)
Q
G
27
43
V
GS
=-4.5V, V
DS
=-32V, I
D
=-7A
Gate to Source Charge
Q
GS
6
14
Gate to Drain Charge
Q
GD
Turn-ON Delay Time (Note)
t
D(ON)
14
Rise Time
t
R
8
V
GS
=-10V, V
DS
=-20V, I
D
=-1A,
R
G
=3.3Ω, R
D
=20Ω
Turn-OFF Delay Time
t
D(OFF)
46
Fall-Time
t
F
17
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
-7.3
Maximum Body-Diode Pulsed Current
I
SM
-30
Drain-Source Diode Forward Voltage (Note)
V
SD
I
S
=-2A, V
GS
=0V
-1.2
Reverse Recovery Time (Note)
t
RR
144
I
S
=-7A, V
GS
=0V,
dI/dt=100A/µs
110
Reverse Recovery Charge
Q
RR
Note: Pulse width
≤
300µs, duty cycle
≤
2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R502-390.E
UT9564
Power MOSFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Drain Source On Resistance,
R
DS(ON)
(mΩ)
Drain Current, I
D
(A)
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QW-R502-390.E
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