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BUK9628-55A_15

Description
N-channel TrenchMOS logic level FET
File Size202KB,14 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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BUK9628-55A_15 Overview

N-channel TrenchMOS logic level FET

D2
PA
K
BUK9628-55A
N-channel TrenchMOS logic level FET
Rev. 02 — 17 February 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source voltage
drain current
total power
dissipation
Conditions
T
j
25 °C; T
j
175 °C
V
GS
= 5 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max Unit
55
42
99
V
A
W
Static characteristics
R
DSon
drain-source on-state V
GS
= 10 V; I
D
= 15 A; T
j
= 25 °C
resistance
V
GS
= 4.5 V; I
D
= 15 A; T
j
= 25 °C
V
GS
= 5 V; I
D
= 15 A; T
j
= 25 °C;
see
Figure 12;
see
Figure 13
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
= 34 A; V
sup
55 V;
R
GS
= 50
Ω;
V
GS
= 5 V;
T
j(init)
= 25 °C; unclamped
-
-
57.8 mJ
-
-
-
22
-
24
25
30
28
mΩ
mΩ
mΩ
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