UNISONIC TECHNOLOGIES CO., LTD
BD435
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
NPN EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
The UTC
BD435
is a NPN epitaxial silicon transistor, it uses
UTC’s advanced technology to provide the customers with high DC
current gain, etc.
The UTC
BD435
is suitable for medium power linear and
switching applications.
FEATURES
* High DC current gain
ORDERING INFORMATION
Package
TO-126
TO-126
Pin Assignment
1
2
3
K
A
G
K
A
G
Packing
Bulk
Bulk
Ordering Number
Lead Free
Halogen Free
BD435L-T60-K
BD435G-T60-K
BD435L-T60-K
BD435G-T60-K
Note: Pin assignment: G: Gate K: Cathode A: Anode
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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BD435
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
32
V
Collector-Emitter Voltage
V
CEO
32
V
Collector-Emitter Voltage
V
CES
32
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current (DC)
I
C
4
A
Collector Current (Pulse) (Note 1)
I
CP
7
A
Base Current
I
B
1
A
Collector Dissipation (T
C
=25°C)
Pc
36
W
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-65 ~150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise noted)
SYMBOL
V
CEO(SUS)
I
CBO
I
CEO
I
EBO
h
FE
TEST CONDITIONS
I
C
=100mA, I
B
=0A
V
CB
=32V, I
E
=0
V
CE
=32V, V
BE
=0
V
EB
=5V, I
C
=0
V
CE
=5V, I
C
=10mA
V
CE
=1V, I
C
=500mA
V
CE
=1V, I
C
=2A
I
C
=2A, I
B
=0.2A
V
CE
=1V, I
C
=2A
V
CE
=1V, I
C
=250mA
MIN
32
TYP
MAX
100
100
1
40
85
50
130
140
0.2
3
0.5
1.1
V
V
MHz
UNIT
V
µA
µA
mA
PARAMETER
Collector-Emitter Sustaining Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain (Note 1)
Collector-Emitter Saturation Voltage (Note 1)
V
CE(SAT)
Base-Emitter ON Voltage (Note 1)
V
BE(ON)
Current Gain Bandwidth Product
f
T
Note: Pulse Test: P
W
=300μs, duty Cycle=1.5% Pulsed
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R221-026.A
BD435
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R221-026.A
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