TO
-22
0A
B
BUK9575-100A
N-channel TrenchMOS logic level FET
Rev. 3 — 26 April 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
1.3 Applications
Automotive and general purpose
power switching
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 10 A;
T
j
= 25 °C
V
GS
= 5 V; I
D
= 10 A;
T
j
= 25 °C
Avalanche ruggedness
E
DS(AL)S
non-repetitive
I
D
= 14.2 A; V
sup
≤
25 V;
drain-source avalanche R
GS
= 50
Ω;
V
GS
= 5 V;
T
j(init)
= 25 °C; unclamped
energy
-
-
100
mJ
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
T
mb
= 25 °C
Min
-
-
-
-
-
Typ
-
-
-
55
60
Max
100
23
98
72
75
Unit
V
A
W
mΩ
mΩ
Static characteristics
NXP Semiconductors
BUK9575-100A
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base;
connected to drain
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
1 2 3
SOT78A (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK9575-100A
TO-220AB
Description
plastic single-ended package; heatsink mounted;
1 mounting hole; 3-lead TO-220AB
Version
SOT78A
Type number
BUK9575-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 26 April 2011
2 of 12
NXP Semiconductors
BUK9575-100A
N-channel TrenchMOS logic level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
T
mb
= 25 °C
pulsed; T
mb
= 25 °C
I
D
= 14.2 A; V
sup
≤
25 V; R
GS
= 50
Ω;
V
GS
= 5 V; T
j(init)
= 25 °C; unclamped
T
mb
= 100 °C
T
mb
= 25 °C
T
mb
= 25 °C; pulsed
T
mb
= 25 °C
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-15
-
-
-
-
-55
-55
-
-
-
Max
100
100
15
16
23
91
98
175
175
23
92
100
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode
Avalanche ruggedness
100
P
der
(%)
80
003aaf170
100
I
D
(%)
80
003aaf171
60
60
40
40
20
20
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
V
GS
≥
5 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature
BUK9575-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 26 April 2011
3 of 12
NXP Semiconductors
BUK9575-100A
N-channel TrenchMOS logic level FET
10
3
I
DM
(A)
10
2
R
DS(on)
= V
DS
/ I
D
003aaf172
10
2
003aaf188
I
AV
tp = 1
μs
10
μs
10
D.C.
1
1
10
100
μs
1 ms
10 ms
10
2
V
DS
(V)
10
3
10
25
°C
T
j
prior to avalanche = 150
°C
1
10
−3
10
−2
10
−1
1
t
AV
(ms)
10
T
mb
= 25 °C; I
DM
is single pulse
Fig 3.
Safe operating area; continuous and peak drain
currents as a function of drain-source voltage
Fig 4.
unclamped inductive load
Single-shot avalanche rating; avalanche
current as a function of avalanche period
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
in free air
Conditions
Min
-
-
Typ
-
60
Max
1.5
-
Unit
K/W
K/W
10
Z
th(j-mb)
(K/W)
1
δ
= 0.5
003aaf173
10
−1
0.2
0.1
0.05
0.02
0
P
δ
=
t
p
T
t
p
T
t
10
−2
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
Fig 5.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK9575-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 26 April 2011
4 of 12
NXP Semiconductors
BUK9575-100A
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6.
Symbol
V
(BR)DSS
V
GS(th)
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
Conditions
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C
I
DSS
I
GSS
R
DSon
drain leakage current
gate leakage current
drain-source on-state
resistance
V
DS
= 100 V; V
GS
= 0 V; T
j
= 175 °C
V
DS
= 100 V; V
GS
= 0 V; T
j
= 25 °C
V
GS
= 10 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -10 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 10 V; I
D
= 10 A; T
j
= 25 °C
V
GS
= 5 V; I
D
= 10 A; T
j
= 175 °C
V
GS
= 4.5 V; I
D
= 10 A; T
j
= 25 °C
V
GS
= 5 V; I
D
= 10 A; T
j
= 25 °C
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
D
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
from drain lead 6 mm from package to
centre of die; T
j
= 25 °C
from contact screw on tab to centre of
die; T
j
= 25 °C
L
S
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
from source lead to source bond pad;
T
j
= 25 °C
I
S
= 10 A; V
GS
= 0 V; T
j
= 25 °C
I
S
= 23 A; V
GS
= 0 V; T
j
= 25 °C
t
rr
Q
r
I
S
= 23 A; dI
S
/dt = -100 A/µs;
V
GS
= -10 V; V
DS
= 30 V; T
j
= 25 °C
V
DS
= 30 V; R
L
= 1.2
Ω;
V
GS
= 5 V;
R
G(ext)
= 10
Ω;
T
j
= 25 °C
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C
-
-
-
-
-
-
-
-
-
-
1278
129
88
13
120
58
57
4.5
3.5
7.5
1704
155
120
20
168
87
86
-
-
-
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
Min
100
89
0.5
1
-
-
-
-
-
-
-
-
-
Typ
-
-
-
1.5
-
-
0.05
2
2
55
-
61
60
Max
-
-
-
2
2.3
500
10
100
100
72
188
84
75
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
Static characteristics
Source-drain diode
V
SD
-
-
-
-
0.85
1.1
63
0.22
1.2
-
-
-
V
V
ns
µC
BUK9575-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 26 April 2011
5 of 12
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