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BD238L-T60-K

Description
-80V, PNP TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size120KB,3 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric Compare View All

BD238L-T60-K Overview

-80V, PNP TRANSISTOR

BD238L-T60-K Parametric

Parameter NameAttribute value
Reach Compliance Codeunknow
Maximum collector current (IC)2 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
Base Number Matches1
UNISONIC TECHNOLOGIES CO., LTD
BD238
-80V, PNP TRANSISTOR
DESCRIPTION
PNP EPITAXIAL SILICON TRANSISTOR
The UTC
BD238
is a PNP epitaxial planar transistor, it uses UTC’s
advanced technology to provide the customers with high DC current
gain and high collector-emitter breakdown voltage, etc.
FEATURES
* High DC current gain
* High collector-emitter breakdown voltage
ORDERING INFORMATION
Pin Assignment
1
2
3
E
C
B
E
C
B
Packing
Bulk
Bulk
Ordering Number
Package
Lead Free
Halogen Free
BD238L-T60-K
BD238G-T60-K
TO-126
BD238L-T6S-K
BD238G-T6S-K
TO-126S
Note: Pin assignment: E: Emitter
B: Base
C: Collector
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 3
QW-R226-002.C

BD238L-T60-K Related Products

BD238L-T60-K BD238G-T60-K BD238_15 BD238L-T6S-K BD238G-T6S-K
Description -80V, PNP TRANSISTOR -80V, PNP TRANSISTOR -80V, PNP TRANSISTOR -80V, PNP TRANSISTOR -80V, PNP TRANSISTOR
Reach Compliance Code unknow unknow - unknow unknow
Maximum collector current (IC) 2 A 2 A - 2 A 2 A
Collector-emitter maximum voltage 80 V 80 V - 80 V 80 V
Configuration SINGLE SINGLE - SINGLE SINGLE
Minimum DC current gain (hFE) 25 25 - 25 25
JEDEC-95 code TO-126 TO-126 - TO-126 TO-126
JESD-30 code R-PSFM-T3 R-PSFM-T3 - R-PSFM-T3 R-PSFM-T3
Number of components 1 1 - 1 1
Number of terminals 3 3 - 3 3
Maximum operating temperature 150 °C 150 °C - 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT
Polarity/channel type PNP PNP - PNP PNP
surface mount NO NO - NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE - SINGLE SINGLE
Transistor component materials SILICON SILICON - SILICON SILICON
Nominal transition frequency (fT) 3 MHz 3 MHz - 3 MHz 3 MHz
Base Number Matches 1 1 - 1 1
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