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BUK7105-40ATE_15

Description
N-channel TrenchPLUS standard level FET
File Size206KB,15 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet View All

BUK7105-40ATE_15 Overview

N-channel TrenchPLUS standard level FET

BUK7105-40ATE
N-channel TrenchPLUS standard level FET
Rev. 02 — 10 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS diodes for
temperature sensing and ElectroStatic Discharge (ESD) protection. This product has been
designed and qualified to the appropriate AEC standard for use in automotive critical
applications.
1.2 Features and benefits
Allows responsive temperature
monitoring due to integrated
temperature sensor
Electrostatically robust due to
integrated protection diodes
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
1.3 Applications
Electrical Power Assisted Steering
(EPAS)
Variable Valve Timing for engines
1.4 Quick reference data
Table 1.
Symbol
V
DS
R
DSon
Quick reference
Parameter
drain-source voltage
Conditions
T
j
25 °C; T
j
175 °C
Min
-
-
Typ
-
4.5
Max
40
5
Unit
V
mΩ
Static characteristics
drain-source on-state V
GS
= 10 V; I
D
= 50 A;
resistance
T
j
= 25 °C; see
Figure 7;
see
Figure 8
temperature sense
diode temperature
coefficient
temperature sense
diode forward
voltage
I
F
= 250 µA; T
j
-55 °C;
T
j
175 °C
I
F
= 250 µA; T
j
= 25 °C
S
F(TSD)
-1.4
-1.54
-1.68
mV/K
V
F(TSD)
648
658
668
mV
V
F(TSD)hys
temperature sense
diode forward
voltage hysteresis
I
F
250 µA; T
j
= 25 °C;
I
F
125 µA
25
32
50
mV
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