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BUK7215-55A_15

Description
N-channel TrenchMOS standard level FET
File Size195KB,14 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet View All

BUK7215-55A_15 Overview

N-channel TrenchMOS standard level FET

DP
AK
BUK7215-55A
N-channel TrenchMOS standard level FET
Rev. 02 — 27 January 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source voltage
drain current
total power
dissipation
Conditions
T
j
25 °C; T
j
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 3;
see
Figure 1
T
mb
= 25 °C; see
Figure 2
[1]
Min
-
-
-
Typ
-
-
-
Max Unit
55
62
115
V
A
W
Static characteristics
R
DSon
drain-source on-state V
GS
= 10 V; I
D
= 25 A;
resistance
T
j
= 25 °C; see
Figure 11;
see
Figure 12
-
13
15
mΩ
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