DP
AK
BUK7227-100B
N-channel TrenchMOS standard level FET
Rev. 02 — 17 February 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 185 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain current
total power
dissipation
drain-source
on-state resistance
Conditions
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max Unit
100
48
167
V
A
W
drain-source voltage T
j
≥
25 °C; T
j
≤
185 °C
Static characteristics
R
DSon
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 11;
see
Figure 12
I
D
= 48 A; V
sup
≤
100 V;
R
GS
= 50
Ω;
V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
V
GS
= 10 V; I
D
= 25 A;
V
DS
= 80 V; T
j
= 25 °C;
see
Figure 13
-
23
27
mΩ
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
gate-drain charge
-
-
145
mJ
Dynamic characteristics
Q
GD
-
13
-
nC
NXP Semiconductors
BUK7227-100B
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
[1]
source
mounting base; connected to
drain
2
1
3
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
SOT428 (DPAK)
[1]
It is not possible to make a connection to pin 2 of the SOT428 package.
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK7227-100B
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
Type number
BUK7227-100B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 17 February 2011
2 of 14
NXP Semiconductors
BUK7227-100B
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1;
see
Figure 3
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
T
mb
= 25 °C
pulsed; t
p
≤
10 µs; T
mb
= 25 °C
I
D
= 48 A; V
sup
≤
100 V; R
GS
= 50
Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
T
mb
= 25 °C; pulsed; t
p
≤
10 µs;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Conditions
T
j
≥
25 °C; T
j
≤
185 °C
R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
Max
100
100
20
34
48
196
167
185
185
48
196
145
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode
Avalanche ruggedness
50
I
D
(A)
40
03nl33
120
P
der
(%)
80
03no96
30
20
40
10
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Continuous drain current as a function of
mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
BUK7227-100B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 17 February 2011
3 of 14
NXP Semiconductors
BUK7227-100B
N-channel TrenchMOS standard level FET
10
3
I
D
(A)
10
2
03nl31
Limit R
DSon
= V
DS
/ I
D
t
p
= 10
μ
s
100
μ
s
10
DC
1 ms
10 ms
100 ms
1
1
10
10
2
V
DS
(V)
10
3
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7227-100B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 17 February 2011
4 of 14
NXP Semiconductors
BUK7227-100B
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to mounting
base
thermal resistance from junction to ambient
Conditions
see
Figure 4
Min
-
-
Typ
-
71.4
Max
0.95
-
Unit
K/W
K/W
1
δ
= 0.5
Z
th(j-mb)
(K/W)
10
−1
0.2
0.1
0.05
0.02
03nk52
10
−2
single shot
P
δ
=
t
p
T
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
t
p
(s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7227-100B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 17 February 2011
5 of 14
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