BUK7610-55AL
N-channel TrenchMOS standard level FET
Rev. 02 — 9 January 2008
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
NXP General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized
for linear operation. This product has been designed and qualified to the appropriate AEC
standard for use in automotive critical applications.
1.2 Features
175
°C
rated
Stable operation in linear mode
Q101 compliant
TrenchMOS technology
1.3 Applications
12 V and 24 V loads
DC linear motor control
Automotive systems
Repetitive clamped inductive switching
1.4 Quick reference data
Table 1.
Symbol
I
D
P
tot
E
DS(AL)S
Quick reference
Parameter
drain current
total power dissipation
non-repetitive
drain-source
avalanche energy
Conditions
V
GS
= 10 V; T
mb
= 25
°C;
see
Figure 4
and
1
T
mb
= 25
°C;
see
Figure 2
I
D
= 75 A; V
sup
≤
55 V;
R
GS
= 50
Ω;
V
GS
= 10 V;
T
j(init)
= 25
°C;
unclamped
inductive load
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25
°C;
see
Figure 12
and
13
[1]
Min
-
-
-
Typ
-
-
-
Max
75
300
1.1
Unit
A
W
J
Avalanche ruggedness
Static characteristics
R
DSon
drain-source on-state
resistance
-
8.5
10
mΩ
[1]
Continuous current is limited by package.
NXP Semiconductors
BUK7610-55AL
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning
Symbol
G
D
S
D
Description
gate
drain
source
mounting base;
connected to drain
1
G
mbb076
Simplified outline
mb
Graphic symbol
D
S
2
3
SOT404 (D2PAK)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK7610-55AL
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead SOT404
cropped)
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
V
DGR
V
GS
I
D
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 25
°C;
V
GS
= 10 V; see
Figure 4
and
1
T
mb
= 25
°C;
V
GS
= 10 V; see
Figure 4
and
1
T
mb
= 100
°C;
V
GS
= 10 V; see
Figure 4
I
DM
P
tot
T
stg
T
j
peak drain current
total power dissipation
storage temperature
junction temperature
I
D
= 75 A; V
sup
≤
55 V; R
GS
= 50
Ω;
V
GS
= 10 V; T
j(init)
= 25
°C;
unclamped
inductive load
see
Figure 3
[4][5]
[6]
[1][2]
[3]
[3]
Conditions
T
j
≥
25
°C;
T
j
≤
175
°C
R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-
-55
-55
-
Max
55
55
20
122
75
75
490
300
175
175
1.1
Unit
V
V
V
A
A
A
A
W
°C
°C
J
T
mb
= 25
°C;
t
p
≤
10
μs;
pulsed
T
mb
= 25
°C;
see
Figure 2
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source avalanche
energy
E
DS(AL)R
repetitive drain-source
avalanche energy
Source-drain diode
I
S
I
SM
BUK7610-55AL_2
-
-
J
source current
peak source current
T
mb
= 25
°C
T
mb
= 25
°C
t
p
≤
10
μs;
pulsed; T
mb
= 25
°C
Rev. 02 — 9 January 2008
[1][2]
[3]
-
-
-
122
75
490
A
A
A
2 of 13
© NXP B.V. 2008. All rights reserved.
Product data sheet
NXP Semiconductors
BUK7610-55AL
N-channel TrenchMOS standard level FET
[1]
[2]
[3]
[4]
[5]
[6]
Current is limited by power dissipation chip rating.
Refer to document 9397 750 12572 for further information.
Continuous current is limited by package.
Single shot avalanche rating limited by maximum junction temperature of 175
°C.
Repetitive avalanche rating limited by average junction temperature of 170
°C.
Refer to application note AN10273 for further information.
150
I
D
(A)
100
(1)
003aaa726
120
P
der
(%)
80
03aa16
50
40
0
0
50
100
150
T
mb
(
°
C)
200
0
0
50
100
150
T
mb
(
°
C)
200
V
GS
10
V
P
der
=
P
tot
P
tot
(25°C )
× 100 %
(1) Capped at 75 A due to package.
Fig 1. Continuous drain current as a function of
mounting base temperature
10
2
I
AV
(A)
(1)
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aaa739
T
j
= 25 ˚C
(2)
10
(3)
150 ˚C
1
10
-1
10
-2
10
-1
1
t
AV
(ms)
10
(1) Single shot.
(2) Single shot.
(3) Repetitive.
Fig 3. Single-shot and repetitive avalanche rating; avalanche current as a function of avalanche period
BUK7610-55AL_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 9 January 2008
3 of 13
NXP Semiconductors
BUK7610-55AL
N-channel TrenchMOS standard level FET
10
3
I
D
(A)
10
2
(1)
003aaa737
Limit R
DSon
= V
DS
/ I
D
t
p
= 10
μ
s
100
μ
s
1 ms
DC
10
10 ms
100 ms
1
1
10
V
DS
(V)
10
2
T
mb
= 25
°C; I
DM
is single pulse
(1) Capped at 75 A due to package.
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to
mounting base
Conditions
mounted on a printed-circuit
board; minimum footprint; vertical
in still air
see
Figure 5
Min
-
Typ
50
Max
-
Unit
K/W
R
th(j-mb)
-
0.25
0.5
K/W
BUK7610-55AL_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 9 January 2008
4 of 13
NXP Semiconductors
BUK7610-55AL
N-channel TrenchMOS standard level FET
1
Z
th(j-mb)
(K/W)
δ
= 0.5
003aaa734
10
-1
0.2
0.1
0.05
0.02
t
p
T
10
-2
P
δ
=
single shot
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
T
t
t
p
(s)
1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
6. Characteristics
Table 6.
Symbol
V
(BR)DSS
Characteristics
Parameter
drain-source
breakdown voltage
Conditions
I
D
= 250
μA;
V
GS
= 0 V;
T
j
= -55
°C
I
D
= 250
μA;
V
GS
= 0 V;
T
j
= 25
°C
V
GS(th)
gate-source threshold I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25
°C;
voltage
see
Figure 10
and
11
I
D
= 1 mA; V
DS
= V
GS
;
T
j
= 175
°C;
see
Figure 10
and
11
I
D
= 1 mA; V
DS
= V
GS
;
T
j
= -55
°C;
see
Figure 10
and
11
I
DSS
drain leakage current
V
DS
= 55 V; V
GS
= 0 V;
T
j
= 175
°C
V
DS
= 55 V; V
GS
= 0 V; T
j
= 25
°C
I
GSS
gate leakage current
V
DS
= 0 V; V
GS
= +20 V;
T
j
= 25
°C
V
DS
= 0 V; V
GS
= -20 V;
T
j
= 25
°C
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A;
T
j
= 175
°C;
see
Figure 12
and
13
V
GS
= 10 V; I
D
= 25 A; T
j
= 25
°C;
see
Figure 12
and
13
Min
50
55
2
1
Typ
-
-
3
-
Max
-
-
4
-
Unit
V
V
V
V
Static characteristics
-
-
-
-
-
-
-
-
0.05
2
2
-
4.4
500
10
100
100
20
V
μA
μA
nA
nA
mΩ
-
8.5
10
mΩ
BUK7610-55AL_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 9 January 2008
5 of 13
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