D2
PA
K
BUK7640-100A
N-channel TrenchMOS standard level FET
Rev. 2 — 20 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
1.3 Applications
Automotive and general purpose
power switching
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
non-repetitive
drain-source
avalanche energy
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C
I
D
= 26 A; V
sup
≤
25 V;
R
GS
= 50
Ω;
V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
T
mb
= 25 °C
Min
-
-
-
-
Typ
-
-
-
30
Max
100
37
138
40
Unit
V
A
W
mΩ
Static characteristics
Avalanche ruggedness
E
DS(AL)S
-
-
31
mJ
NXP Semiconductors
BUK7640-100A
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
[1]
source
mounting base;
connected to drain
2
1
3
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
SOT404 (D2PAK)
[1]
drain (D)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK7640-100A
D2PAK
Description
plastic single-ended surface-mounted package (D2PAK);
3 leads (one lead cropped)
Version
SOT404
Type number
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
T
mb
= 25 °C
pulsed; T
mb
= 25 °C
I
D
= 26 A; V
sup
≤
25 V; R
GS
= 50
Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
T
mb
= 25 °C
T
mb
= 100 °C
T
mb
= 25 °C; pulsed
T
mb
= 25 °C
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
Max
100
100
20
37
26
149
138
175
175
37
149
31
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode
Avalanche ruggedness
BUK7640-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 20 April 2011
2 of 12
NXP Semiconductors
BUK7640-100A
N-channel TrenchMOS standard level FET
100
P
der
(%)
80
003aaf471
100
I
D
(%)
80
003aaf586
60
60
40
40
20
20
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
V
GS
≥
10 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature
003aaf587
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature
003aaf600
10
3
I
D
(A)
10
2
100
W
DSS
(%)
80
R
DS(on)
= V
DS
/ I
D
tp = 1
μs
10
μs
100
μs
1 ms
DC
10 ms
100 ms
10
2
V
DS
(V)
10
3
60
40
10
20
1
1
10
0
20
60
100
140
T
mb
(°C)
180
T
mb
= 25 °C; I
DM
is single pulse
Fig 3.
Safe operating area; continuous and peak drain
currents as a function of drain-source voltage
Fig 4.
I
D
= 75 A
Normalised drain-source non-repetitive
avalanche energy as a function of
mounting-base temperature
BUK7640-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 20 April 2011
3 of 12
NXP Semiconductors
BUK7640-100A
N-channel TrenchMOS standard level FET
10
2
003aaf601
l
AV
(A)
25
°C
10
T
j
prior to avalanche = 150
°C
1
10
−3
10
−2
10
−1
1
t
AV
(ms)
10
unclamped inductive load
Fig 5.
Single-shot avalanche rating; avalanche current as a function of avalanche period
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
minimum footprint; FR4 board
Conditions
Min
-
-
Typ
-
50
Max
1.1
-
Unit
K/W
K/W
10
Z
th(j-mb)
(K/W)
1
δ
= 0.5
003aaf588
10
−1
0.2
0.1
0.05
0.02
0
P
δ
=
t
p
T
10
−2
t
p
t
T
10
−3
10
−7
10
−5
10
−3
10
−1
t (s)
10
Fig 6.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7640-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 20 April 2011
4 of 12
NXP Semiconductors
BUK7640-100A
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6.
Symbol
V
(BR)DSS
V
GS(th)
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
Conditions
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C
I
DSS
I
GSS
R
DSon
drain leakage current
gate leakage current
drain-source on-state
resistance
V
DS
= 100 V; V
GS
= 0 V; T
j
= 175 °C
V
DS
= 100 V; V
GS
= 0 V; T
j
= 25 °C
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 10 V; I
D
= 25 A; T
j
= 175 °C
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C
Min
89
100
2
-
1
-
-
-
-
-
-
-
-
-
V
DS
= 30 V; R
L
= 1.2
Ω;
V
GS
= 10 V;
R
G(ext)
= 10
Ω;
T
j
= 25 °C
-
-
-
-
measured from upper edge of drain tab
to centre of die; T
j
= 25 °C
measured from source lead soldering
point to source bond pad; T
j
= 25 °C
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C
I
S
= 37 A; V
GS
= 0 V; T
j
= 25 °C
t
rr
Q
r
reverse recovery time
recovered charge
I
S
= 37 A; dI
S
/dt = -100 A/µs;
V
GS
= -10 V; V
DS
= 30 V; T
j
= 25 °C
-
-
Typ
-
-
3
-
-
-
0.05
2
2
-
30
1720
216
133
12
55
48
30
2.5
7.5
Max
-
-
4
4.4
-
500
10
100
100
108
40
2293
259
182
18
83
67
42
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nH
nH
Static characteristics
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
source-drain voltage
Source-drain diode
V
SD
-
-
-
-
0.85
1.1
70
0.24
1.2
-
-
-
V
V
ns
µC
BUK7640-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 20 April 2011
5 of 12
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