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BUK7675-100A_15

Description
N-channel TrenchMOS standard level FET
File Size177KB,13 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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BUK7675-100A_15 Overview

N-channel TrenchMOS standard level FET

BUK7675-100A
N-channel TrenchMOS standard level FET
Rev. 02 — 31 July 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
V
DS
I
D
P
tot
Quick reference
Conditions
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1
and
3
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max
100
23
99
Unit
V
A
W
drain-source voltage T
j
25 °C; T
j
175 °C
drain current
total power
dissipation
Symbol Parameter
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
Static characteristics
R
DSon
drain-source
on-state resistance
V
GS
= 10 V; I
D
= 13 A;
T
j
= 175 °C; see
Figure 12
and
13
V
GS
= 10 V; I
D
= 13 A;
T
j
= 25 °C; see
Figure 12
and
13
-
-
187
mΩ
I
D
= 14 A; V
sup
100 V;
R
GS
= 50
Ω;
V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
-
-
100
mJ
-
64
75
mΩ
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