D ts e t
aa h e
R c e t r lc r nc
o h se Ee to is
Ma u a t r dCo o e t
n fc u e
mp n n s
R c e tr b a d d c mp n ns ae
o h se rn e
o oet r
ma ua trd u ig ete dewaes
n fcue sn i r i/ fr
h
p rh s d f m te oiia s p l r
uc a e r
o h r n l u pi s
g
e
o R c e tr waes rce td f m
r o h se
fr e rae r
o
te oiia I. Al rce t n ae
h
r nl P
g
l e rai s r
o
d n wi tea p o a o teOC
o e t h p rv l f h
h
M.
P r aetse u igoiia fcoy
at r e td sn r n la tr
s
g
ts p o rmso R c e tr e eo e
e t rga
r o h se d v lp d
ts s lt n t g aa te p o u t
e t oui s o u rne
o
rd c
me t o e c e teOC d t s e t
es r x e d h
M aa h e.
Qu l yOv riw
ai
t
e ve
• IO- 0 1
S 90
•A 92 cr ct n
S 1 0 et ai
i
o
• Qu l e Ma ua trr Ls (
ai d
n fcues it QML MI- R -
) LP F
385
53
•C a sQ Mitr
ls
lay
i
•C a sVS a eL v l
ls
p c ee
• Qu l e S p l r Ls o D sr uos( L )
ai d u pi s it f it b tr QS D
e
i
•R c e trsacic l u pir oD A a d
o h se i
r ia s p l t L n
t
e
me t aln u t a dD A sa d r s
es lid sr n L tn ad .
y
R c e tr lcrnc , L i c mmi e t
o h se Ee t is L C s o
o
tdo
t
s p ligp o u t ta s t f c so r x e t-
u pyn rd cs h t ai y u tme e p ca
s
t n fr u lya daee u loto eoiial
i s o q ai n r q a t h s r n l
o
t
g
y
s p l db id sr ma ua trr.
u pi
e yn ut
y n fcues
T eoiia ma ua trr d ts e t c o a yn ti d c me t e e t tep r r n e
h r n l n fcue’ aa h e a c mp n ig hs o u n r cs h ef ma c
g
s
o
a ds e ic t n o teR c e tr n fcue v rino ti d vc . o h se Ee t n
n p c ai s f h o h se ma ua trd eso f hs e ie R c e tr lcr -
o
o
isg aa te tep r r n eo i s mio d co p o u t t teoiia OE s e ic -
c u rne s h ef ma c ft e c n u tr rd cs o h r n l M p c a
o
s
g
t n .T pc lv le aefr eee c p r o e o l. eti mii m o ma i m rt g
i s ‘y ia’ au s r o rfrn e up s s ny C r n nmu
o
a
r xmu ai s
n
ma b b s do p o u t h rceiain d sg , i lt n o s mpetsig
y e a e n rd c c aa tr t , e in smuai , r a l e t .
z o
o
n
© 2 1 R cetr l t n s LC Al i t R sre 0 1 2 1
0 3 ohs E cr i , L . lRg s eevd 7 1 0 3
e e oc
h
T l r m r, l s v iw wrcl . m
o e n oe p ae it w . e c o
a
e
s
o ec
a
FEATURES
High CMRR: 100 dB Typ
Low Nonlinearity: 0.001% Max
Low Distortion: 0.001% Typ
Wide Bandwidth: 3 MHz Typ
Fast Slew Rate: 9.5 V/ s Typ
Fast Settling (0.01%): 1 s Typ
Low Cost
APPLICATIONS
Summing Amplifiers
Instrumentation Amplifiers
Balanced Line Receivers
Current-Voltage Conversion
Absolute Value Amplifier
4 to 20 mA Current Transmitter
Precision Voltage Reference Applications
Lower Cost and Higher Speed Version of INA105
Precision, Unity-Gain
Differential Amplifier
AMP03
FUNCTIONAL BLOCK DIAGRAM
AMP03
25k
–IN
2
25k
5
SENSE
+V
CC
7
6
OUTPUT
–V
EE
4
25k
+IN
3
25k
1
REFERENCE
PIN CONNECTIONS
8-Lead PDIP
(P Suffix)
GENERAL DESCRIPTION
The AMP03 is a monolithic unity-gain, high speed differential
amplifier. Incorporating a matched thin film resistor network,
the AMP03 features stable operation over temperature without
requiring expensive external matched components. The AMP03
is a basic analog building block for differential amplifier and
instrumentation applications.
The differential amplifier topology of the AMP03 both amplifies
the difference between two signals and provides extremely high
rejection of the common-mode input voltage. By providing
common-mode rejection (CMR) of 100 dB typical, the AMP03
solves common problems encountered in instrumentation design.
As an example, the AMP03 is ideal for performing either addi-
tion or subtraction of two signals without using expensive
externally matched precision resistors. The large common-mode
rejection is made possible by matching the internal resistors to
better than 0.002% and maintaining a thermally symmetric
layout. Additionally, due to high CMR over frequency, the
AMP03 is an ideal general amplifier for buffering signals in a
noisy environment into data acquisition systems.
The AMP03 is a higher speed alternative to the INA105.
Featuring slew rates of 9.5 V/µs and a bandwidth of 3 MHz, the
AMP03 offers superior performance to the INA105 for high
speed current sources, absolute value amplifiers, and summing
amplifiers.
REFERENCE 1
–IN 2
8 NC
7 V+
TOP VIEW
+IN 3 (Not to Scale) 6 OUTPUT
V– 4
5 SENSE
AMP03
NC = NO CONNECT
8-Lead SOIC
(S Suffix)
REFERENCE 1
–IN 2
8 NC
7 V+
TOP VIEW
+IN 3 (Not to Scale) 6 OUTPUT
V– 4
5 SENSE
AMP03
NC = NO CONNECT
Header
(J Suffix)
NC
8
REFERENCE 1
7 V+
–IN 2
6 OUTPUT
5 SENSE
4
V–
NC = NO CONNECT
+IN 3
REV. F
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703
© 2003 Analog Devices, Inc. All rights reserved.
AMP03–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(@ V =
S
15 V, T
A
= +25 C, unless otherwise noted.)
Min
–400
AMP03F
Typ
Max
+10
Min
AMP03B
AMP03G
Typ
Max Min
Typ Max
+20
+700 –750
+25
Unit
Parameter
Offset Voltage
Gain Error
Input Voltage Range
Common-Mode Rejection
Power Supply Rejection Ratio
Output Swing
Short-Circuit Current Limit
Small-Signal Bandwidth (–3 dB)
Slew Rate
Capacitive Load Drive
Capability
Supply Current
Symbol Conditions
V
OS
V
CM
= 0 V
No Load, V
IN
=
±
10 V,
R
S
= 0
Ω
(Note 1)
V
CM
=
±
10 V
V
S
=
±
6 V to
±
18 V
R
L
= 2 kΩ
Output Shorted
to Ground
R
L
= 2 kΩ
R
L
= 2 kΩ
No Oscillation
No Load
+400 –700
+750
µV
0.00004 0.008
±
20
85
±
12
+45/–15
6
3
9.5
300
2.5
100
0.6
±
13.7
±
20
80
10
±
12
+45/–15
6
0.00004 0.008
95
0.6
±
13.7
±
20
80
10
±
12
+45/–15
3
9.5
300
2.5
6
IVR
CMR
PSRR
V
O
I
SC
BW
SR
C
L
I
SY
0.001 0.008 %
V
95
dB
0.7
10
µV/V
±
13.7
V
mA
MHz
V/µs
pF
mA
3
9.5
300
2.5
3.5
3.5
3.5
NOTES
1
Input voltage range guaranteed by CMR test.
Specifications subject to change without notice.
ELECTRICAL CHARACTERISTICS
(@ V =
S
15 V, –55 C
≤
T
A
≤
+125 C for B Grade)
Min
–1500
±
20
75
AMP03B
Typ
+150
0.0014
95
0.7
±
13.7
9.5
3.0
20
Max
+1500
0.02
Unit
µV
%
V
dB
µV/V
V
V/µs
mA
Parameter
Offset Voltage
Gain Error
Input Voltage Range
Common-Mode Rejection
Power Supply Rejection
Ratio
Output Swing
Slew Rate
Supply Current
Symbol
V
OS
IVR
CMR
PSRR
V
O
SR
I
SY
Conditions
V
CM
= 0 V
No Load, V
IN
=
±
10 V, R
S
= 0
Ω
V
CM
=
±
10 V
V
S
=
±
6 V to
±
18 V
R
L
= 2 kΩ
R
L
= 2 kΩ
No Load
±
12
4.0
Specifications subject to change without notice.
ELECTRICAL CHARACTERISTICS
(@ V =
S
15 V, –40 C
≤
T
A
≤
+85 C for F and G Grades)
AMP03F
Min Typ
Max
–1000 +100 +1000
0.0008 0.015
±
20
80
95
0.7
±
13.7
9.5
2.6
15
±
12
4.0
AMP03G
Min
Typ
Max
–2000 +200
0.002
±
20
75
90
1.0
±
13.7
9.5
2.6
Unit
Parameter
Offset Voltage
Gain Error
Input Voltage Range
Common-Mode Rejection
Power Supply Rejection
Ratio
Output Swing
Slew Rate
Supply Current
Symbol
V
OS
IVR
CMR
PSRR
V
O
SR
I
SY
Conditions
V
CM
= 0 V
No Load, V
IN
=
±
10 V, R
S
= 0
Ω
V
CM
=
±
10 V
V
S
=
±
6 V to
±
18 V
R
L
= 2 kΩ
R
L
= 2 kΩ
No Load
+2000
µV
0.02
%
V
dB
15
µV/V
V
V/µs
mA
±
12
4.0
Specifications subject to change without notice.
–2–
REV. F
AMP03
WAFER TEST LIMITS
(@ V =
S
15 V, T
A
= 25 C, unless otherwise noted.)*
Symbol
V
OS
IVR
CMR
PSRR
V
O
I
SC
I
SY
Conditions
V
S
=
±
18 V
No Load, V
IN
=
±
10 V, R
S
= 0
Ω
V
CM
=
±
10 V
V
S
=
±
6 V to
±
18 V
R
L
= 2 kΩ
Output Shorted to Ground
No Load
AMP03GBC
Limit
0.5
0.008
±
10
80
8
±
12
+45/–15
3.5
Unit
mV max
% max
V min
dB min
µV/V
max
V max
mA min
mA max
Parameter
Offset Voltage
Gain Error
Input Voltage Range
Common-Mode Rejection
Power Supply Rejection Ratio
Output Swing
Short-Circuit Current Limit
Supply Current
*Electrical
tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
ABSOLUTE MAXIMUM RATINGS
1
DICE CHARACTERISTICS
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
18 V
Input Voltage
2
. . . . . . . . . . . . . . . . . . . . . . . . . Supply Voltage
Output Short-Circuit Duration . . . . . . . . . . . . . . Continuous
Storage Temperature Range
P, J Package . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . . 300°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
Operating Temperature Range
AMP03B . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to +125°C
AMP03F, AMP03G . . . . . . . . . . . . . . . . . . –40°C to +85°C
Package Type
Header (J)
8-Lead PDIP (P)
8-Lead SOIC (S)
JA
3
JC
1.
2.
3.
4.
5.
6.
7.
8.
REFERENCE
–IN
+IN
–V
EE
SENSE
OUTPUT
+V
CC
NC
Unit
°C/W
°C/W
°C/W
DIE SIZE 0.076 inch 0.076 inch, 5,776 sq. mm
(1.93 mm 1.93 mm, 3.73 sq. mm)
150
103
155
18
43
40
NOTES
1
Absolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.
2
For supply voltages less than
±
18 V, the absolute maximum input voltage is equal
to the supply voltage.
3
θ
JA
is specified for worst-case mounting conditions, i.e.,
θ
JA
is specified for device
in socket for header and PDIP packages and for device soldered to printed circuit
board for SOIC package.
BURN-IN CIRCUIT
+18V
25k
AMP03
25k
25k
ORDERING GUIDE
Model
1
Temperature
Range
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–55°C to +125°C
–40°C to +85°C
–40°C to +85°C
–55°C to +125°C
Package
Description
8-Lead PDIP
Header
Header
Header
8-Lead SOIC
8-Lead SOIC
Header
Die
Package
Option
2
P-8
H-08B
H-08B
H-08B
S-8
S-8
H-08B
–18V
AMP03GP
AMP03BJ
AMP03FJ
AMP03BJ/883C
AMP03GS
AMP03GS-REEL
5962-9563901MGA
AMP03GBC
SLEW RATE TEST CIRCUIT
+15V
0.1 F
AMP03
V
OUT
=
V
IN
=
10V
0.1 F
–15V
10V
NOTES
1
Burn-in is available on commercial and industrial temperature range parts in
PDIP and header packages.
2
Consult factory for /883 data sheet.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AMP03 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
REV. F
–3–
AMP03–Typical Performance Characteristics
120
110
COMMON-MODE REJECTION (dB)
100
90
80
70
60
50
40
30
20
10
0
1
10
T
A
= +25 C
V
S
= 15V
0.1
T
A
= +25 C
V
S
= 15V
A
V
= –1
0.010
THD+N (%)
R
L
= 600
0.001
R
L
= 100k
100
1k
10k
FREQUENCY (Hz)
100k
1M
0.0001
20
100
1k
FREQUENCY (Hz)
10k 20k
TPC 1. Small Signal Transient
Response
TPC 2. Common-Mode Rejection
vs. Frequency
TPC 3. Total Harmonic Distortion
vs. Frequency
120
0.1
POWER SUPPLY REJECTION (dB)
110
100
90
80
70
60
50
40
30
20
10
0
1
10
T
A
= +25 C
V
S
= 15V
T
A
= +25 C
V
S
= 15V
A
V
= –1
0.010
–PSRR
DIM (%)
R
L
= 600 , 100k
0.001
+PSRR
100
1k
10k
FREQUENCY (Hz)
100k
1M
0.0001
2k
10k
FREQUENCY (Hz)
50k
TPC 4. Large Signal Transient
Response
TPC 5. Power Supply Rejection vs.
Frequency
TPC 6. Dynamic Intermodulation
Distortion vs. Frequency
1000
V
S
=
800
INPUT OFFSET VOLTAGE ( V)
CLOSED-LOOP GAIN (dB)
15V
50
40
30
20
10
0
–10
–20
0 25 50 75 100 125 150
TEMPERATURE ( C)
10
T
A
= +25°C
V
S
= 15V
T
A
= +25°C
V
S
= 15V
8
600
400
200
0
–200
–400
–600
–800
–75 –50 –25
OUTPUT IMPEDANCE ( )
6
4
2
–30
100
0
1k
10k
100k
FREQUENCY (Hz)
1M
10M
100
1k
10k
100k
FREQUENCY (Hz)
1M
TPC 7. Input Offset Voltage vs.
Temperature
TPC 8. Closed-Loop Gain vs.
Frequency
TPC 9. Closed-Loop Output
Impedance vs. Frequency
–4–
REV. F
京公网安备 11010802033920号
EEWORLD
