BUK762R0-40C_15 datasheet, PDF

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BUK762R0-40C_15: DescriptionN-channel TrenchMOS standard level FET; File Size196KB，15 Pages; ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.); Websitehttps://www.nxp.com/

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BUK762R0-40C_15 Overview

N-channel TrenchMOS standard level FET

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BUK762R0-40C

N-channel TrenchMOS standard level FET

Rev. 02 — 20 August 2007

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using Philips Ultra High-Performance Automotive (UHP) TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in

Automotive critical applications.

1.2 Features

175

°C

rated

Q101 compliant

Low on-state resistance

Standard level compatible

1.3 Applications

12 V loads

General purpose power switching

Automotive systems

Motors, lamps, solenoids

1.4 Quick reference data

Table 1.

tot

DSon

Quick reference

Conditions

= 10 V; T

= 25

°C;

see

Figure 1

and

= 25

°C;

see

Figure 2

= 10 V; I

= 25 A;

= 25

°C;

see

Figure 13

and

[1][2]

Symbol Parameter

drain current

total power dissipation

drain-source on-state

resistance

Min

Typ

1.7

Max

100

333

Unit

mΩ

Static characteristics

Avalanche ruggedness

DS(AL)S

non-repetitive

= 100 A; V

sup

≤

40 V;

drain-source avalanche R

= 50

Ω;

= 10 V;

energy

j(init)

= 25

°C;

inductive load

type unclamped inductive load

[1]

[2]

Continuous current is limited by package.

Refer to document 9397 750 12572 for further information.

1.2

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