PJT7812 datasheet, PDF - EEWORLD Datasheet

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PJT7812: Description30V N-Channel Enhancement Mode MOSFET â ESD Protected; File Size313KB，6 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJT7812 Overview

30V N-Channel Enhancement Mode MOSFET â ESD Protected

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PPJT7812

30V N-Channel Enhancement Mode MOSFET – ESD Protected

Voltage

Features



30 V

Current

500mA

SOT-363

Unit: inch(mm)

DS(ON)

, V

@4.5V, I

@500mA<1.2Ω

DS(ON)

, V

@2.5V, I

@200mA<1.6Ω

DS(ON)

, V

@1.8V, I

@100mA<2.3Ω

DS(ON)

, V

@1.5V, I

@10mA<2.3Ω(typ.)

Specially Designed for Switch Load, PWM Application, etc.

ESD Protected 2KV HBM

Lead free in compliance with EU RoHS 2011/65/EU directive

Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data



Case: SOT-363 Package

Terminals: Solderable per MIL-STD-750, Method 2026

Approx. Weight: 0.0002 ounces, 0.006 grams

Marking: T12

Maximum Ratings and Thermal Characteristics

=25 C unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

(Note 4)

Power Dissipation

=25

Derate above 25

SYMBOL

STG

θJA

LIMIT

UNITS

mW/

+10

500

1500

350

2.8

-55~150

357

Operating Junction and Storage Temperature Range

Typical Thermal resistance

Junction to Ambient

(Note 3)

C/W

September 16,2015-REV.00

Page 1

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