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PSMN1R8-30BL_15

Description
N-channel 30 V, 1.8 m logic level MOSFET in D2PAK
File Size218KB,15 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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PSMN1R8-30BL_15 Overview

N-channel 30 V, 1.8 m logic level MOSFET in D2PAK

D2
PA
K
PSMN1R8-30BL
N-channel 30 V, 1.8 mΩ logic level MOSFET in D2PAK
Rev. 1 — 22 March 2012
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for logic level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
T
j
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A; T
j
= 100 °C;
see
Figure 13;
see
Figure 12
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 12
Dynamic characteristics
Q
GD
Q
G(tot)
E
DS(AL)S
gate-drain charge
total gate charge
non-repetitive drain-source
avalanche energy
V
GS
= 4.5 V; I
D
= 25 A; V
DS
= 15 V;
see
Figure 14;
see
Figure 15
-
-
-
22
83
-
-
-
1.1
nC
nC
J
Conditions
T
j
25 °C; T
j
175 °C
T
mb
= 25 °C; V
GS
= 10 V;
see
Figure 1
T
mb
= 25 °C; see
Figure 2
[1]
Min
-
-
-
-55
-
-
Typ
-
-
-
-
2.17
1.55
Max
30
100
270
175
2.6
1.8
Unit
V
A
W
°C
mΩ
mΩ
Static characteristics
Avalanche ruggedness
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 100 A;
V
sup
30 V; R
GS
= 50
Ω;
unclamped
[1]
Continuous current is limited by package.
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