UNISONIC TECHNOLOGIES CO., LTD
BC807/BC808
SWITCHING AND AMPLIFIER
APPLICATIONS
FEATURES
PNP SILICON TRANSISTOR
* Suitable for AF-Driver stages and low power output stages
* Complement to BC817 / BC818
ORDERING INFORMATION
Ordering Number
Package
SOT-23
SOT-323
SOT-23
SOT-323
E: Emitter
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
BC807G-xx-AE3-R
BC807G-xx-AL3-R
BC808G-xx-AE3-R
BC808G-xx-AL3-R
Note: Pin Assignment: C: Collector B: Base
MARKING
807-16
807-25
807-40
808-16
9GAG
808-25
808-40
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PARAMETER
SYMBOL
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25C, unless otherwise specified)
RATINGS
UNIT
BC807
-50
V
Collector-Emitter Voltage
V
CES
BC808
-30
V
BC807
-45
V
Collector-Emitter Voltage
V
CEO
BC808
-25
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current (DC)
I
C
-800
mA
Collector Dissipation
P
C
310
mW
Junction Temperature
T
J
+150
C
Storage Temperature
T
STG
-65 ~ +150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25C, unless otherwise noted)
PARAMETER
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CES
I
EBO
h
FE1
h
FE2
V
CE(SAT)
V
BE(ON)
f
T
C
ob
TEST CONDITIONS
I
C
=-10mA, I
B
=0
I
C
=-0.1mA, V
BE
=0
I
E
=-0.1mA, I
C
=0
V
CE
=-25V, V
BE
=0
V
EB
=-4V, I
C
=0
I
C
=-100mA, V
CE
=-1V
I
C
=-300mA, V
CE
=-1V
I
C
=-500mA, I
B
=-50mA
I
C
=-300mA, V
CE
=-1V
V
CE
=-5V, I
C
=-10mA, f=50MHz
V
CB
=-10V, f=1MHz
MIN
-45
-25
-50
-30
-5
TYP
MAX UNIT
V
V
V
V
V
-100
nA
-100
nA
630
-0.7
-1.2
100
12
V
V
MHz
pF
BC807
BC808
BC807
Collector-Emitter Breakdown Voltage
BC808
Emitter-Base Breakdown Voltage
Collector Cut-OFF Current
Emitter Cut-OFF Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
100
60
CLASSIFICATION OF h
FE
RANK
h
FE1
h
FE2
16
100-250
60-
25
160-400
100-
40
250-630
170-
UNISONIC TECHNOLOGIES CO., LTD
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TYPICAL CHARACTERISTICS
PNP SILICON TRANSISTOR
DC Current Gain
1000
V
CE
=-2.0V
100
V
CE
=-1.0V
PULSE
-10
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
I
C
=10I
B
PULSE
V
BE(SAT)
-1
10
-0.1
V
CE(SAT)
1
-0.1
-1
-10
-100
-1000
Collector Current, I
C
(mA)
-0.01
-0.1
-1
-10
-100
Collector Current, I
C
(mA)
Input Output Capacitance
100
Capacitance, C
ib
, C
ob
(pF)
f=1.0MHz
C
ib
C
ob
10
-1000
Base-Emitter On Voltage
-1000
Collect current, I
C
(mA)
V
CE
=-1V
PULSE
-100
-10
-1
-0.1
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
1
-0.1
Base-Emitter Voltage, V
BE
(V)
-100
-1
-10
Collector-Base Voltage, V
CB
(V)
Emitter-Base Voltage, V
EB
(V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS(Cont.)
Current Gain Bandwidth Product
Gain Bandwidth Product, f
T
(MHz)
1000
V
CE
=-5.0V
PNP SILICON TRANSISTOR
100
10
-1
-10
Collector Current, I
C
(mA)
-100
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-026.F
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