THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ2351ES
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0, I
D
= - 250 μA
V
DS
= V
GS
, I
D
= - 250 μA
V
DS
= 0 V, V
GS
= ± 12 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= - 4.5 V
V
GS
= - 4.5 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 4.5 V
V
GS
= - 4.5 V
V
GS
= - 2.5 V
Forward
Transconductance
b
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
I
F
= - 2 A, V
GS
= 0
V
DD
= - 10 V, R
L
= 5.21
I
D
- 1.9 A, V
GEN
= - 4.5 V, R
g
= 1
f = 1 MHz
V
GS
= - 4.5 V
V
DS
= - 10 V, I
D
= - 2.4 A
V
GS
= 0 V
V
DS
= - 10 V, f = 1 MHz
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source
Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
a
Forward Voltage
Time
c
-
-
-
-
-
-
4.8
-
-
-
-
-
-
265
75
50
3.4
0.6
1.1
9.6
20
18
19
8
-
- 0.8
330
94
63
5.5
-
-
14.4
30
27
28
12
- 12.7
- 1.2
A
V
ns
nC
pF
V
DS
= - 20 V
V
DS
= - 20 V, T
J
= 125 °C
V
DS
= - 20 V, T
J
= 175 °C
V
DS
5
V
I
D
= - 2.4 A
I
D
= - 2.4 A, T
J
= 125 °C
I
D
= - 2.4 A, T
J
= 175 °C
I
D
= - 1.8 A
- 20
- 0.6
-
-
-
-
-8
-
-
-
-
-
-
- 1.0
-
-
-
-
-
0.080
-
-
0.150
6
-
- 1.5
± 100
-1
- 50
- 150
-
0.115
0.168
0.196
0.205
-
S
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= - 10 V, I
D
= - 2.4 A
Source-Drain Diode Ratings and Characteristics
b
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-2312-Rev. B, 01-Oct-12
Document Number: 66716
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ2351ES
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
12
V
GS
= 5.0 V thru 3.5 V
Vishay Siliconix
10
8
9
I
D
- Drain Current (A)
I
D
- Drain Current (A)
V
GS
= 3 V
T
C
= 25 °C
6
6
V
GS
= 2.5 V
4
3
V
GS
= 2 V
2
T
C
= 125 °C
0
0
1
2
V
GS
= 1.5 V
3
4
5
0
0
T
C
= - 55 °C
1
2
3
4
V
GS
-
Gate-to-Source
Voltage (V)
5
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
10
0.5
g
fs
- Transconductance (S)
T
C
= 25
°C
6
T
C
= - 55
°C
R
DS(on)
- On-Resistance (Ω)
8
0.4
0.3
V
GS
= 4.5 V
4
T
C
= 125
°C
0.2
V
GS
= 10 V
2
0.1
0
0.0
0.4
0.8
1.2
1.6
I
D
- Drain Current (A)
2.0
2.4
0.0
0
2
4
6
8
10
I
D
- Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
500
4.5
I
D
= 2.4 A
4.0
400
C - Capacitance (pF)
V
GS
-
Gate-to-Source
Voltage (V)
3.5
V
DS
= 10 V
3.0
2.5
2.0
1.5
1.0
0.5
0.0
300
C
iss
200
C
oss
100
C
rss
0
0
10
15
V
DS
- Drain-to-Source Voltage (V)
5
20
0
1
2
3
4
5
Q
g
- Total
Gate
Charge (nC)
Capacitance
Gate Charge
S12-2312-Rev. B, 01-Oct-12
Document Number: 66716
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ2351ES
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.0
R
DS(on)
- On-Resistance (Normalized)
Vishay Siliconix
100
I
D
= 1.8 A
1.7
I
S
-
Source
Current (A)
10
V
GS
= 4.5 V
1.4
V
GS
= 2.5 V
1.1
T
J
= 150 °C
1
T
J
= 25 °C
0.1
0.8
0.01
0.5
- 50
0.001
- 25
0
25
50
75
100
125
150
175
0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
- Junction Temperature (°C)
V
SD
-
Source-to-Drain
Voltage (V)
On-Resistance vs. Junction Temperature
1.0
0.5
0.4
R
DS(on)
- On-Resistance (Ω)
Source-Drain Diode Forward Voltage
0.8
0.3
0.6
V
GS(th)
Variance (V)
I
D
= 250 μA
0.2
I
D
= 5 mA
0.1
0
- 0.1
0.4
0.2
T
J
= 25 °C
0
1
2
3
T
J
= 150 °C
0.0
4
5
- 0.2
- 50
- 25
0
25
50
75
100
125
150
175
V
GS
-
Gate-to-Source
Voltage (V)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
- 21
I
D
= 1 mA
V
DS
- Drain-to-Source Voltage (V)
- 22
- 23
- 24
- 25
- 26
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S12-2312-Rev. B, 01-Oct-12
Document Number: 66716
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
京公网安备 11010802033920号
EEWORLD
