BUK7610-100B
6 July 2012
N-channel TrenchMOS standard level FET
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
•
Low conduction losses due to low on-state resistance
•
Q101 compliant
•
Suitable for standard level gate drive sources
•
Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
•
12 V, 24 V and 42 V loads
•
Automotive systems
•
General purpose power switching
•
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 1; Fig. 3
T
mb
= 25 °C;
Fig. 2
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11; Fig. 12
V
GS
= 10 V; I
D
= 25 A; V
DS
= 80 V;
T
j
= 25 °C;
Fig. 13
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-
source avalanche
energy
I
D
= 75 A; V
sup
≤ 100 V; R
GS
= 50 Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
-
-
629
mJ
-
22
-
nC
[1]
Min
-
-
-
Typ
-
-
-
Max
100
75
300
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
-
8.6
10
mΩ
Dynamic characteristics
Q
GD
gate-drain charge
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NXP Semiconductors
BUK7610-100B
N-channel TrenchMOS standard level FET
[1]
Continuous current is limited by package.
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
[1]
source
mounting base; connected to
drain
2
1
3
G
mbb076
Simplified outline
mb
Graphic symbol
D
S
D2PAK (SOT404)
[1]
It is not possible to make connection to pin 2.
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK7610-100B
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Type number
4. Marking
Table 4.
Marking codes
Marking code
BUK7610-100B
Type number
BUK7610-100B
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
DGR
V
GS
I
D
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 25 °C; V
GS
= 10 V;
Fig. 1; Fig. 3
T
mb
= 100 °C; V
GS
= 10 V;
Fig. 1
I
DM
BUK7610-100B
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
R
GS
= 20 kΩ
Min
-
-
-20
[1]
[2]
[2]
Max
100
100
20
110
75
75
438
Unit
V
V
V
A
A
A
A
2 / 12
-
-
-
-
peak drain current
T
mb
= 25 °C; pulsed; t
p
≤ 10 µs;
Fig. 3
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
6 July 2012
NXP Semiconductors
BUK7610-100B
N-channel TrenchMOS standard level FET
Symbol
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
Parameter
total power dissipation
storage temperature
junction temperature
Conditions
T
mb
= 25 °C;
Fig. 2
Min
-
-55
-55
Max
300
175
175
Unit
W
°C
°C
Source-drain diode
source current
peak source current
T
mb
= 25 °C
pulsed; t
p
≤ 10 µs; T
mb
= 25 °C
I
D
= 75 A; V
sup
≤ 100 V; R
GS
= 50 Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
[1]
[2]
-
-
-
110
75
438
A
A
A
Avalanche ruggedness
non-repetitive drain-source
avalanche energy
[1]
[2]
120
I
D
(A)
80
-
629
mJ
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
03ng70
120
P
der
(%)
80
03na19
Capped at 75 A due to package
40
40
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig. 1.
Normalized continuous drain current as a
function of mounting base temperature
Fig. 2.
Normalized total power dissipation as a
function of mounting base temperature
BUK7610-100B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
6 July 2012
3 / 12
NXP Semiconductors
BUK7610-100B
N-channel TrenchMOS standard level FET
10
3
I
D
(A)
10
2
Limit R
DSon
= V
DS
/ I
D
003aag933
t
p
=10 µ s
100 µ s
10
Capped at 75 A due to package
DC
1
1 ms
10 ms
100 ms
10
-1
1
10
10
2
V
DS
(V)
10
3
Fig. 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
1
Z
th(j-mb)
(K/W)
10
- 1
Conditions
Fig. 4
Min
-
Typ
-
Max
0.5
Unit
K/W
R
th(j-a)
mounted on printed-circuit board ;
minimum footprint
-
50
-
K/W
03ng69
δ = 0.5
0.2
0.1
0.05
10
- 2
0.02
P
δ=
t
p
T
Single Shot
10
- 3
10
- 6
t
p
10
- 4
10
- 3
10
- 2
t
T
t
p
(s)
1
10
- 5
10
- 1
Fig. 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7610-100B
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© NXP B.V. 2012. All rights reserved
Product data sheet
6 July 2012
4 / 12
NXP Semiconductors
BUK7610-100B
N-channel TrenchMOS standard level FET
7. Characteristics
Table 7.
Symbol
V
(BR)DSS
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
Conditions
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
Fig. 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
Fig. 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
Fig. 10
I
DSS
drain leakage current
V
DS
= 100 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 100 V; V
GS
= 0 V; T
j
= 175 °C
I
GSS
gate leakage current
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11; Fig. 12
V
GS
= 10 V; I
D
= 25 A; T
j
= 175 °C;
Fig. 11; Fig. 12
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
D
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
from drain lead 6 mm from package to
centre of die ; T
j
= 25 °C
from upper edge of drain mounting
base to centre of die ; T
j
= 25 °C
L
S
BUK7610-100B
Min
100
89
1
2
-
-
-
-
-
-
-
Typ
-
-
-
3
-
0.02
-
2
2
8.6
-
Max
-
-
-
4
4.4
1
500
100
100
10
25
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
Static characteristics
V
GS(th)
I
D
= 25 A; V
DS
= 80 V; V
GS
= 10 V;
T
j
= 25 °C;
Fig. 13
-
-
-
80
18
22
5080
677
168
33
45
120
36
4.5
2.5
7.5
-
-
-
6773
812
230
-
-
-
-
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C;
Fig. 14
-
-
-
V
DS
= 30 V; R
L
= 1.2 Ω; V
GS
= 10 V;
R
G(ext)
= 10 Ω; T
j
= 25 °C
-
-
-
-
-
-
-
internal source
inductance
from source lead to source bond pad ;
T
j
= 25 °C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
6 July 2012
5 / 12
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