EEWORLDEEWORLDEEWORLD

Part Number

Search

BUH100AF

Description
10A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size281KB,10 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

BUH100AF Overview

10A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN

BUH100AF Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionTO-220AB, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)10 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)6
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)23 MHz
BUH100G
SWITCHMODE NPN Silicon
Planar Power Transistor
The BUH100G has an application specific state−of−art die designed
for use in 100 W Halogen electronic transformers.
This power transistor is specifically designed to sustain the large
inrush current during either the startup conditions or under a short
circuit across the load.
Features
http://onsemi.com
Improved Efficiency Due to the Low Base Drive Requirements:
High and Flat DC Current Gain h
FE
Fast Switching
Robustness Due to the Technology Developed to Manufacture
this Device
ON Semiconductor Six Sigma Philosophy Provides Tight and
Reproducible Parametric Distributions
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Voltage
Collector Current
Base Current
Continuous
Peak (Note 1)
Continuous
Peak (Note 1)
Symbol
V
CEO
V
CBO
V
CES
V
EBO
I
CM
I
B
I
BM
P
D
T
J
, T
stg
I
C
Value
400
700
700
10
10
20
4
10
100
0.8
−60
to 150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W/_C
_C
POWER TRANSISTORS
10 AMPERES
700 VOLTS
100 WATTS
TO−220AB
CASE 221A−09
STYLE 1
1
2
3
MARKING DIAGRAM
Total Device Dissipation @ T
C
= 25_C
Derate above 25°C
Operating and Storage Temperature
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes1/8″ from Case for 5 Seconds
Symbol
R
qJC
R
qJA
T
L
Max
1.25
62.5
260
Unit
_C/W
_C/W
_C
A
Y
WW
G
BUH100G
AY WW
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
BUH100G
Package
TO−220AB
(Pb−Free)
Shipping
50 Units / Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2011
October, 2011
Rev. 6
1
Publication Order Number:
BUH100/D
How to transplant UCOS-ii to LM89S62?
Has anyone done the transplantation of UCOS-II to LM89S62? Can you share some experience and information with me?...
wulei19880906 Real-time operating system RTOS
Questions about the i2c bus
When writing data 0x0f, the first readout is 0x0f, and all subsequent readouts are 0xff. The same is true for writing other data, only the first readout is correct. Why is this? ? ?...
xioajinglchy Embedded System
Is there any code for porting LM3S9B96 to UCOSII?
Is there any code for porting LM3S9B96 to UCOSII?...
0212009623 Microcontroller MCU
Help for newbies with USART2 problems
Initialize USART as follows:USART_InitStructure.USART_BaudRate = 9600;USART_InitStructure.USART_WordLength = USART_WordLength_8b;USART_InitStructure.USART_StopBits = USART_StopBits_1;USART_InitStructu...
iamljz stm32/stm8
Numonyx Storage White Paper Collection
White Paper: Phase Change Memory - A New Technology Bringing New Application Models [b] http://comm.ednchina.com/Company/numonyx/resourcedetail.aspx?id=41 White Paper: Low Power Non-Volatile Memory Sy...
青年 Embedded System
Eeworld four-layer board study some device datasheet
[i=s]This post was last edited by MrKingMCU on 2015-5-5 22:09[/i] Since I want to participate in this event ([url=https://bbs.eeworld.com.cn/thread-461349-1-1.html]Event Post[/url]), I have to do my p...
MrKingMCU PCB Design

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1944  712  1931  2382  428  40  15  39  48  9 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号