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BSB165N15NZ3G

Description
9 A, 150 V, 0.0165 ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size28KB,1 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BSB165N15NZ3G Overview

9 A, 150 V, 0.0165 ohm, N-CHANNEL, Si, POWER, MOSFET

BSB165N15NZ3G Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionCHIP CARRIER, R-MBCC-N3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Factory Lead Time1 week
Avalanche Energy Efficiency Rating (Eas)440 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage150 V
Maximum drain current (Abs) (ID)45 A
Maximum drain current (ID)9 A
Maximum drain-source on-resistance0.0165 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-MBCC-N3
JESD-609 codee4
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)78 W
Maximum pulsed drain current (IDM)180 A
surface mountYES
Terminal surfaceSilver/Nickel (Ag/Ni)
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Material Content Data Sheet
Sales Product Name
MA#
Package
Construction Element
chip
leadframe
leadfinish
plating
glue
solder
BSB165N15NZ3 G
MA001355610
MG-WDSON-2-9
Material Group
inorganic material
non noble metal
non noble metal
noble metal
non noble metal
plastics
noble metal
non noble metal
noble metal
non noble metal
plastics
< 10%
Substances
silicon
copper
nickel
silver
nickel
epoxy resin
silver
copper
silver
tin
epoxy resin
CAS#
if applicable
7440-21-3
7440-50-8
7440-02-0
7440-22-4
7440-02-0
-
7440-22-4
7440-50-8
7440-22-4
7440-31-5
-
Issued
Weight*
Weight
[mg]
6.356
74.415
0.211
0.840
0.211
0.254
1.561
0.011
0.066
2.119
0.327
Average
Mass
[%]
7.36
86.17
0.24
0.97
0.24
0.29
1.81
0.01
0.08
2.45
0.38
3. September 2015
86.37 mg
Sum
[%]
7.36
86.17
Average
Mass
[ppm]
73594
861570
2445
1.21
0.24
9725
2445
2942
2.10
18071
127
763
2.54
0.38
24528
3790
25418
3790
1000000
21013
12170
2445
Sum
[ppm]
73594
861570
passivation
*deviation
Sum in total: 100.00
Important Remarks:
1.
2.
3.
Infineon Technologies AG provides full material declaration based on information provided by third parties and
has taken and continues to take reasonable steps to provide representative and accurate information.
Infineon Technologies AG and Infineon Technologies AG suppliers consider certain information to be
proprietary, and thus CAS numbers and other limited information may not be available for release.
All statements are based on our present knowledge, are provided 'as is' and may be subject to change at any
time due to technical requirements and development without notification.
This product is in compliance with EU Directive 2011/65/EU (RoHS) and does not use any exemption.
Company
Address
Internet
Infineon Technologies AG
81726 München
www.infineon.com

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Description 9 A, 150 V, 0.0165 ohm, N-CHANNEL, Si, POWER, MOSFET 9 A, 150 V, 0.0165 ohm, N-CHANNEL, Si, POWER, MOSFET
Shell connection DRAIN DRAIN
Number of components 1 1
Number of terminals 3 3
surface mount YES Yes
Terminal form NO LEAD NO
Terminal location BOTTOM BOTTOM
transistor applications SWITCHING switch
Transistor component materials SILICON silicon
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