n-Channel Power MOSFET
OptiMOS™
BSC010NE2LSI
Data Sheet
2.1, 2011-09-08
Final
Industrial & Multimarket
OptiMOS™ Power-MOSFET
BSC010NE2LSI
1
Description
OptiMOS™25V products are class leading power MOSFETs for highest power
density and energy efficient solutions. Ultra low gate and output charges together
with lowest on state resistance in small footprint packages make OptiMOS™ 25V
the best choice for the demanding requirements of voltage regulator solutions in
Servers, Datacom and Telecom applications. Super fast switching Control FETs
together with low EMI Sync FETs provide solutions that are easy to design in.
OptiMOS™ products are available in high performance packages to tackle your
most challenging applications giving full flexibility in optimizing space, efficiency
and cost. OptiMOS™ products are designed to meet and exceed the energy
efficiency and power density requirements of the sharpened next generation
voltage regulation standards in computing applications
Features
•
•
•
•
•
•
•
•
Optimized for high performance Buck converter
100% avalanche tested
Very low on-resistance R
DS(on)
@ V
GS
=4.5 V
Qualified according to JEDEC
1)
for target applications
N-channel
Pb-free plating; RoHS compliant
Halogen-free according to IEC61249-2-21
Monolithic integrated Schottky like diode
Applications
•
•
•
•
On board power for server
Power managment for high performance computing
Synchronous rectification
High power density point of load converters
Table 1
Parameter
Key Performance Parameters
Value
25
1.05
100
38
59
Unit
V
mΩ
A
nC
nC
Related Links
IFX OptiMOS webpage
IFX OptiMOS product brief
IFX OptiMOS spice models
IFX Design tools
V
DS
R
DS(on),max
I
D
Q
OSS
Q
g
.
typ
Type
BSC010NE2LSI
Package
PG-TDSON-8
Marking
010NE2LI
1) J-STD20 and JESD22
Final Data Sheet
1
2.1, 2011-09-08
OptiMOS™ Power-MOSFET
BSC010NE2LSI
2
Maximum ratings
at
T
j
= 25 °C, unless otherwise specified.
Table 2
Parameter
Continuous drain current
Maximum ratings
Symbol
Min.
I
D
-
-
-
-
-
Pulsed drain current
2)
Avalanche current, single pulse
3)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
I
AS
E
AS
V
GS
P
tot
T
j
,T
stg
-
-
-
-20
-
-
-55
55
-
-
-
-
-
-
-
-
-
-
-
-
150
Values
Typ.
Max.
100
100
100
100
38
400
50
100
20
96
2.5
150
56
°C
Ncm
mJ
V
W
T
C
=25 °C
T
A
=25 °C,
R
thJA
=50 K/W
1)
)
I
D
=50 A,R
GS
=25
Ω
A
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
V
GS
=4.5 V,
T
C
=25 °C
V
GS
=4.5 V,
T
C
=100 °C
V
GS
=10 V,
T
A
=25 °C,
R
thJA
=50 K/W
1)
)
T
C
=25 °C
Unit
Note / Test Condition
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
3
Table 3
Parameter
Thermal characteristics
Thermal characteristics
Symbol
Min.
-
-
-
-
-
-
Values
Typ.
Max.
1.3
20
50
K/W
top
6 cm
2
cooling area
1)
Unit
Note /
Test Condition
Thermal resistance, junction - case
R
thJC
Device on PCB
R
thJA
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air
Final Data Sheet
2
2.1, 2011-09-08
OptiMOS™ Power-MOSFET
BSC010NE2LSI
Electrical characteristics
4
Electrical characteristics
Electrical characteristics, at
T
j=25 °C, unless otherwise specified.
Table 4
Parameter
Static characteristics
Symbol
Min.
Drain-source breakdown voltage
V
(BR)DSS
Breakdown voltage temperature
coefficien
Gate threshold voltage
Zero gate voltage drain current
25
-
15
-
-
3
10
1.1
0.9
0.6
160
Values
Typ.
Max.
-
-
2
0.5
-
100
1.4
1.05
-
-
Ω
S
|V
DS
|>2|I
D|RDS(on)max
,
I
D
=30 A
nA
mΩ
mA
V
mV/K
Unit
Note / Test Condition
V
GS
=0 V,
I
D
=1.mA
I
D
=10 mA, referenced to
25°C
dV
(BR)DSS
-
/dT
j
V
GS(th)
I
DSS
1.2
-
-
V
DS
=
V
GS
,
I
D
=250 µA
V
DS
=20 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=20 V,
V
GS
=0 V,
T
j
=125 °C
V
GS
=20V,
V
DS
=0 V
V
GS
=4.5 V,
I
D
=30A,
V
GS
=10 V,
I
D
=30 A,
Gate-source leakage current
I
GSS
-
-
-
-
80
Drain-source on-state resistance
R
DS(on)
Gate resistance
Transconductance
R
G
g
fs
Table 5
Parameter
Dynamic characteristics
Symbol
Min.
Values
Typ.
4200
1800
180
6.3
6.2
32
4.6
Max.
-
-
-
-
-
-
-
ns
pF
-
-
-
-
-
-
-
Unit
Note /
Test Condition
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
C
oss
C
rss
V
GS
=0 V,
V
DS
=12 V,
f
=1 MHz
V
DD
=12 V,
V
GS
=10V,
I
D
=30 A,
R
G
= 1.6
Ω
t
d(on)
t
r
t
d(off)
t
f
Final Data Sheet
3
2.1, 2011-09-08
OptiMOS™ Power-MOSFET
BSC010NE2LSI
Electrical characteristics
Table 6
Parameter
Gate charge characteristics
1)
Symbol
Min.
Values
Typ.
10
6.7
6.9
10
29
2.4
59
Max.
-
-
-
-
-
-
-
V
nC
nC
-
-
-
-
-
-
-
Unit
Note /
Test Condition
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Q
gs
Q
g(th)
Q
gd
Q
sw
V
DD
=12 V,
I
D
=30 A,
V
GS
=0 to 4.5 V
Q
g
V
plateau
Q
g
V
DD
=12 V,
I
D
=30 A,
V
GS
=0 to 10V
V
DS
=0.1 V,
V
GS
=0 to 4.5 V
V
DD
=12 V,
V
GS
=0 V
Gate charge total, sync. FET
Output charge
Q
g(sync)
Q
oss
-
-
25
38
-
-
1) See figure 16 for gate charge parameter definition
Table 7
Parameter
Reverse diode characteristics
Symbol
Min.
I
s
I
S,pulse
-
-
-
-
-
-
0.56
5
Values
Typ.
Max.
96
400
0.7
-
V
nC
A
Unit
Note /
Test Condition
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
T
C
=25 °C
V
GS
=0 V,
I
F
=12 A,
T
j
=25 °C
V
R
=15 V,
I
F
=I
s
,
d
i
F
/d
t
=400 A/µs
V
SD
Q
rr
Final Data Sheet
4
2.1, 2011-09-08
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