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BUK755R4-100E_15

Description
N-channel TrenchMOS standard level FET
File Size207KB,13 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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BUK755R4-100E_15 Overview

N-channel TrenchMOS standard level FET

BUK755R4-100E
11 September 2012
N-channel TrenchMOS standard level FET
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) rating of greater than 1V at 175 °C
1.3 Applications
12V, 24V and 48V Automotive systems
Electric and electro-hydraulic power steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 1
T
mb
= 25 °C;
Fig. 2
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11
V
GS
= 10 V; I
D
= 25 A; V
DS
= 80 V;
T
j
= 25 °C;
Fig. 13; Fig. 14
[1]
Continuous current is limited by package.
[1]
Min
-
-
-
Typ
-
-
-
Max
100
120
349
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
-
4.1
5.2
Dynamic characteristics
Q
GD
gate-drain charge
-
65
-
nC
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