DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D252
BGD702
750 MHz, 18.5 dB gain
power doubler amplifier
Product specification
Supersedes data of 2001 Nov 02
2001 Nov 27
Philips Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler amplifier
FEATURES
•
Excellent linearity
•
Extremely low noise
•
Silicon nitride passivation
•
Rugged construction
•
Gold metallization ensures excellent reliability.
APPLICATIONS
•
CATV systems operating in the 40 to 750 MHz
frequency range.
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
at a supply voltage of 24 V (DC).
PINNING - SOT115J
PIN
1
2, 3
5
7, 8
9
input
common
+V
B
common
output
BGD702
DESCRIPTION
handbook, halfpage
1
2
3
8
5 7 9
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
G
p
I
tot
PARAMETER
power gain
total current consumption (DC)
CONDITIONS
f = 50 MHz
f = 750 MHz
V
B
= 24 V
MIN.
18
18.5
−
−
435
MAX.
19
UNIT
dB
dB
mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
i
T
stg
T
mb
RF input voltage
storage temperature
operating mounting base temperature
PARAMETER
−
−40
−20
MIN.
MAX.
65
+100
+100
UNIT
dBmV
°C
°C
2001 Nov 27
2
Philips Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler amplifier
CHARACTERISTICS
Table 1
Bandwidth 40 to 750 MHz; V
B
= 24 V; T
mb
= 35
°C;
Z
S
= Z
L
= 75
Ω
PARAMETER
power gain
slope cable equivalent
flatness of frequency response
input return losses
CONDITIONS
f = 50 MHz
f = 750 MHz
SL
FL
s
11
f = 40 to 750 MHz
f = 40 to 750 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 750 MHz
s
22
output return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 750 MHz
s
21
CTB
X
mod
CSO
d
2
V
o
NF
phase response
composite triple beat
cross modulation
f = 50 MHz
MIN.
18
18.5
0.2
−
20
19
18
17
16
20
19
18
17
16
−45
TYP.
18.5
19.7
1.3
±0.2
27
30
29
22
21
23
24
23
21
21
−
−59
−64
−63
−78
64
4.5
−
−
−
6.5
425
BGD702
SYMBOL
G
p
MAX.
19
−
2
±0.5
−
−
−
−
−
−
−
−
−
−
+45
−58
−62
−58
−68
−
5.5
6.5
6.5
7
8.5
435
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dBmV
dB
dB
dB
dB
dB
mA
110 channels flat; V
o
= 44 dBmV;
−
measured at 745.25 MHz
110 channels flat; V
o
= 44 dBmV;
−
measured at 55.25 MHz
composite second order distortion 110 channels flat; V
o
= 44 dBmV;
−
measured at 746.5 MHz
second order distortion
output voltage
noise figure
note 1
d
im
=
−60
dB; note 2
f = 50 MHz
f = 450 MHz
f = 550 MHz
f = 600 MHz
f = 750 MHz
−
61
−
−
−
−
−
−
I
tot
Notes
total current consumption (DC)
note 3
1. f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 691.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 746.5 MHz.
2. Measured according to DIN45004B:
f
p
= 740.25 MHz; V
p
= V
o
;
f
q
= 747.25 MHz; V
q
= V
o
−6
dB;
f
r
= 749.25 MHz; V
r
= V
o
−6
dB;
measured at f
p
+ f
q
−
f
r
= 738.25 MHz.
3. The modules normally operate at V
B
= 24 V, but are able to withstand supply transients up to V
B
= 30 V.
2001 Nov 27
3
Philips Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler amplifier
Table 2
Bandwidth 40 to 600 MHz; V
B
= 24 V; T
mb
= 35
°C;
Z
S
= Z
L
= 75
Ω
PARAMETER
power gain
slope cable equivalent
flatness of frequency response
input return losses
CONDITIONS
f = 50 MHz
f = 600 MHz
SL
FL
s
11
f = 40 to 600 MHz
f = 40 to 600 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 600 MHz
s
22
output return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 600 MHz
s
21
CTB
X
mod
CSO
d
2
V
o
NF
I
tot
Notes
1. f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 541.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 596.5 MHz.
2. Measured according to DIN45004B:
f
p
= 590.25 MHz; V
p
= V
o
;
f
q
= 597.25 MHz; V
q
= V
o
−6
dB;
f
r
= 599.25 MHz; V
r
= V
o
−6
dB;
measured at f
p
+ f
q
−
f
r
= 588.25 MHz.
phase response
composite triple beat
cross modulation
f = 50 MHz
85 channels flat; V
o
= 44 dBmV;
measured at 595.25 MHz
85 channels flat; V
o
= 44 dBmV;
measured at 55.25 MHz
MIN.
18
18.5
0.2
−
20
19
18
17
20
19
18
17
−45
−
−
−
−
64
−
−
TYP.
18.5
19.4
−
−
27
30
29
22
23
24
23
21
−
−66
−66
−68
−80
67
−
425
BGD702
SYMBOL
G
p
MAX.
19
−
2
±0.3
−
−
−
−
−
−
−
−
+45
−65
−65
−60
−70
−
−
435
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dBmV
dB
mA
composite second order distortion 85 channels flat; V
o
= 44 dBmV;
measured at 596.5 MHz
second order distortion
output voltage
noise figure
total current consumption (DC)
note 1
d
im
=
−60
dB; note 2
see Table 1
note 3
3. The modules normally operate at V
B
= 24 V, but are able to withstand supply transients up to V
B
= 30 V.
2001 Nov 27
4
Philips Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler amplifier
Table 3
Bandwidth 40 to 550 MHz; V
B
= 24 V; T
mb
= 35
°C;
Z
S
= Z
L
= 75
Ω
PARAMETER
power gain
slope cable equivalent
flatness of frequency response
input return losses
CONDITIONS
f = 50 MHz
f = 550 MHz
SL
FL
s
11
f = 40 to 550 MHz
f = 40 to 550 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
s
22
output return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
s
21
CTB
X
mod
CSO
d
2
V
o
NF
I
tot
Notes
1. f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 493.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 548.5 MHz.
2. Measured according to DIN45004B:
f
p
= 540.25 MHz; V
p
= V
o
;
f
q
= 547.25 MHz; V
q
= V
o
−6
dB;
f
r
= 549.25 MHz; V
r
= V
o
−6
dB;
measured at f
p
+ f
q
−
f
r
= 538.25 MHz.
phase response
composite triple beat
cross modulation
f = 50 MHz
77 channels flat; V
o
= 44 dBmV;
measured at 547.25 MHz
77 channels flat; V
o
= 44 dBmV;
measured at 55.25 MHz
MIN.
18
18.5
0.2
−
20
19
18
17
20
19
18
17
−45
−
−
−
−
64.5
−
−
TYP.
18.5
19.3
−
−
27
30
29
22
23
24
23
21
−
−68
−68
−68
−81
68
−
425
BGD702
SYMBOL
G
p
MAX.
19
−
2
±0.3
−
−
−
−
−
−
−
−
+45
−67
−67
−62
−72
−
−
435
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dBmV
dB
mA
composite second order distortion 77 channels flat; V
o
= 44 dBmV;
measured at 548.5 MHz
second order distortion
output voltage
noise figure
total current consumption (DC)
note 1
d
im
=
−60
dB; note 2
see Table 1
note 3
3. The modules normally operate at V
B
= 24 V, but are able to withstand supply transients up to V
B
= 30 V.
2001 Nov 27
5
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