DISCRETE SEMICONDUCTORS
DATA SHEET
BLF245
VHF power MOS transistor
Product specification
September 1992
Philips Semiconductors
Product specification
VHF power MOS transistor
FEATURES
•
High power gain
•
Low noise figure
•
Easy power control
•
Good thermal stability
•
Withstands full load mismatch.
g
MBB072
BLF245
PIN CONFIGURATION
lfpage
1
4
d
s
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the VHF frequency
range.
The transistor is encapsulated in a
4-lead SOT123 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
Matched gate-source voltage (V
GS
)
groups are available on request.
PINNING - SOT123
PIN
1
2
3
4
drain
source
gate
source
DESCRIPTION
2
3
MSB057
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°C
in a class-B test circuit.
MODE OF OPERATION
CW, class-B
f
(MHz)
175
V
DS
(V)
28
P
L
(W)
30
G
p
(dB)
>
13
η
D
(%)
>
50
September 1992
2
Philips Semiconductors
Product specification
VHF power MOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DS
±V
GS
I
D
P
tot
T
stg
T
j
PARAMETER
drain-source voltage
gate-source voltage
DC drain current
total power dissipation
storage temperature
junction temperature
up to T
mb
= 25
°C
V
GS
= 0
V
DS
= 0
CONDITIONS
−
−
−
−
−65
−
MIN.
BLF245
MAX.
65
20
6
68
150
200
UNIT
V
V
A
W
°C
°C
THERMAL RESISTANCE
SYMBOL
R
th j-mb
R
th mb-h
PARAMETER
thermal resistance from
junction to mounting base
thermal resistance from
mounting base to heatsink
CONDITIONS
T
mb
= 25
°C;
P
tot
= 68 W
T
mb
= 25
°C;
P
tot
= 68 W
THERMAL RESISTANCE
2.6 K/W
0.3 K/W
handbook, halfpage
10
MRA921
handbook, halfpage
100
MGP167
Ptot
(W)
ID
(A)
(1)
(2)
80
60
1
40
(2)
(1)
20
10
−1
1
10
VDS (V)
10
2
0
0
40
80
120
Th (°C)
160
(1) Current is this area may be limited by R
DS(on)
.
(2) T
mb
= 25
°C.
(1) Continuous operation.
(2) Short-time operation during mismatch.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
September 1992
3
Philips Semiconductors
Product specification
VHF power MOS transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
∆V
GS
g
fs
R
DS(on)
I
DSX
C
is
C
os
C
rs
F
PARAMETER
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
gate-source voltage difference of
matched devices
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
noise figure (see Fig.14)
CONDITIONS
V
GS
= 0; I
D
= 10 mA
V
GS
= 0; V
DS
= 28 V
±V
GS
= 20 V; V
DS
= 0
I
D
= 10 mA; V
DS
= 10 V
I
D
= 10 mA; V
DS
= 10 V
I
D
= 1.5 A; V
DS
= 10 V
I
D
= 1.5 A; V
GS
= 10 V
V
GS
= 10 V; V
DS
= 10 V
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
MIN.
65
−
−
2
−
1.2
−
−
−
−
−
TYP.
−
−
−
−
−
1.9
0.4
10
125
75
7
2
BLF245
MAX. UNIT
−
2
1
4.5
100
−
0.75
−
−
−
−
−
V
mA
µA
V
mV
S
Ω
A
pF
pF
pF
dB
input and output power matched for:
−
I
D
= 1 A; V
DS
= 28 V; P
L
= 30 W;
R1 = 1 kΩ; T
h
= 25
°C;
f = 175 MHz
handbook, halfpage
6
MGP168
T.C.
(mV/K)
4
handbook, halfpage
12
MGP169
Tj = 25
°C
ID
(A)
8
125
°C
2
0
−2
−4
−6
10
4
10
2
10
3
ID (mA)
10
4
0
0
10
VGS (V)
20
V
DS
= 10 V; valid for T
j
= 25 to 125
°C.
V
DS
= 10 V.
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
Fig.5
Drain current as a function of gate-source
voltage, typical values.
September 1992
4
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF245
handbook, halfpage
0.8
MGP170
handbook, halfpage
240
MGP171
RDS(on)
(Ω)
0.6
C
(pF)
200
160
0.4
120
0.2
80
Cis
Cos
0
0
40
80
120
Tj (°C)
160
40
0
10
20
30
VDS (V)
40
V
GS
= 10 V;
I
D
= 1.5 A.
V
GS
= 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a
function of junction temperature, typical
values.
Fig.7
Input and output capacitance as functions
of drain-source voltage, typical values.
handbook, halfpage
20
MRA920
Crs
(pF)
10
0
0
10
20
VDS (V)
30
V
GS
= 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of
drain-source voltage, typical values.
September 1992
5
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