DISCRETE SEMICONDUCTORS
DATA SHEET
BFG94
NPN 6 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
FEATURES
•
High power gain
•
Low noise figure
•
Low intermodulation distortion
•
Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN transistor mounted in a plastic
SOT223 envelope. It is primarily
intended for use in communication
and instrumentation systems.
1
Top view
BFG94
PINNING
PIN
1
2
3
4
base
emitter
collector
DESCRIPTION
emitter
page
4
2
3
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
C
re
f
T
G
UM
V
O
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
feedback capacitance
transition frequency
maximum unilateral power gain
output voltage
up to T
s
= 140
°C
(note 1)
I
C
= 0; V
CE
= 10 V; f = 1 MHz
I
C
= 45 mA; V
CE
= 10 V; f = 1 GHz;
T
amb
= 25
°C
I
C
= 45 mA; V
CE
= 10 V; f = 1 GHz;
T
amb
= 25
°C
I
C
= 45 mA; V
CE
= 10 V;
d
im
=
−60
dB; R
L
= 75
Ω;
f = 800 MHz; T
amb
= 25
°C
I
C
= 45 mA; V
CE
= 10 V; f = 1 GHz;
T
amb
= 25
°C
open base
CONDITIONS
open emitter
MIN. TYP. MAX. UNIT
−
−
−
−
−
4
11.5
−
−
−
−
−
−
6
13.5
500
15
12
60
700
0.8
−
−
−
V
V
mA
mW
pF
GHz
dB
mV
P
L1
Note
output power at 1 dB gain
compression
−
21.5
−
dBm
1. T
s
is the temperature at the soldering point of the collector tab.
September 1995
2
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
up to T
s
= 140
°C
(note 1)
open emitter
open base
open collector
CONDITIONS
MIN.
−
−
−
−
−
−65
−
BFG94
MAX.
15
12
2
60
700
150
175
UNIT
V
V
V
mA
mW
°C
°C
THERMAL RESISTANCE
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector tab.
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to T
s
= 140
°C
(note 1)
THERMAL RESISTANCE
50 K/W
September 1995
3
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
C
c
C
e
C
re
f
T
PARAMETER
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
CONDITIONS
I
E
= 0; V
CB
= 10 V
I
C
= 30 mA; V
CE
= 5 V
I
C
= 45 mA; V
CE
= 10 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
e
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= i
c
= 0; V
CE
= 10 V; f = 1 MHz
I
C
= 45 mA; V
CE
= 10 V; f = 1 GHz;
T
amb
= 25
°C
I
C
= 30 mA; V
CE
= 5 V; f = 1 GHz;
T
amb
= 25
°C
G
UM
F
maximum unilateral power gain
(note1)
minimum noise figure
I
C
= 45 mA; V
CE
= 10 V; f = 1 GHz;
T
amb
= 25
°C
Γ
s
=
Γ
opt
; I
C
= 45 mA; V
CE
= 10 V;
f = 500 MHz
Γ
s
=
Γ
opt
; I
C
= 45 mA; V
CE
= 10 V;
f = 1 GHz
V
O
d
2
P
L1
ITO
Notes
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
G
UM
S
21
-------------------------------------------------------------
dB.
-
=
10 log
2
2
1
–
S
11
1
–
S
22
2
BFG94
MIN. TYP. MAX.
−
45
−
−
−
−
4
4
11.5
−
−
−
−
−
90
100
0.9
2.9
0.5
−
6
13.5
2.7
3
500
−51
21.5
34
100
−
−
2
4.5
0.8
−
−
−
−
−
−
−
−
−
UNIT
nA
pF
pF
pF
GHz
GHz
dB
dB
dB
mV
dB
dBm
dBm
output voltage
second order intermodulation
distortion
output power at 1 dB gain
compression
third order intercept point
note 2
note 3
I
C
= 45 mA; V
CE
= 10 V; R
L
= 50
Ω; −
T
amb
= 25
°C;
measured at f = 1 GHz
note 4
−
2. d
im
=
−60
dB (DIN 45004B, par 6.3: 3-tone); I
C
= 45 mA; V
CE
= 10 V; R
L
= 75
Ω;
T
amb
= 25
°C;
V
p
= V
O
at d
im
=
−60
dB; f
p
= 795.25 MHz;
V
q
= V
O
−6
dB; V
r
= V
O
−6
dB;
f
q
= 803.25 MHz; f
r
= 805.25 MHz;
measured at f
(p+q−r)
= 793.25 MHz.
3. I
C
= 45 mA; V
CE
= 10 V; R
L
= 75
Ω;
T
amb
= 25
°C;
V
q
= V
O
= 280 mV;
f
p
= 250 MHz; f
q
= 560 MHz;
measured at f
(p+q)
= 810 MHz.
4. I
C
= 45 mA; V
CE
= 10 V; R
L
= 50
Ω;
T
amb
= 25
°C;
f
p
= 1000 MHz; f
q
= 1001 MHz;
measured at f
(2p−q)
and f
(2q−p
).
September 1995
4
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFG94
+V
BB
L3
10 kΩ
L2
1 nF
1 nF
L1
input
75
Ω
1 nF
247
Ω
DUT
2 pF
33
Ω
33
Ω
+V
CC
output
75
Ω
DUT
TEST
FIXTURE
INPUT SLUG TUNER
BIAS
TEE
input
OUTPUT SLUG TUNER
MBB780
BIAS
TEE
output
MBB789
L1 = L3 = 5
µH
micro-choke.
L2 = 1 turn copper wire (0.4 mm), internal diameter 4 mm.
Fig.2
Test circuit for second and third order
intermodulation distortion.
Fig.3
Measurement set-up for third order
intercept point and 1 dB gain compression.
MBB790
handbook, halfpage
800
handbook, halfpage
120
MCD087
P tot
(mW)
600
h FE
80
400
40
200
0
0
50
100
150
Ts (°C)
200
0
0
10
20
IC (mA)
30
V
CE
= 10 V; T
j
= 25
°C
Fig.4 Power derating curve.
Fig.5
DC current gain as a function of collector
current.
September 1995
5
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