DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
BFR540
NPN 9 GHz wideband transistor
Product specification
Supersedes data of 1999 Aug 23
2000 May 30
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
FEATURES
•
High power gain
•
Low noise figure
•
High transition frequency
•
Gold metallization ensures
excellent reliability.
APPLICATIONS
RF front end wideband applications in
the GHz range, such as analog and
digital cellular telephones, cordless
telephones (CT1, CT2, DECT, etc.),
radar detectors, satellite TV tuners
(SATV), MATV/CATV amplifiers and
repeater amplifiers in fibre-optic
systems.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CES
I
C
P
tot
h
FE
C
re
f
T
G
UM
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
T
s
≤
70
°C;
note 1
I
C
= 40 mA; V
CE
= 8 V
I
C
= i
c
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= 40 mA; V
CE
= 8 V; f = 1 GHz
I
C
= 40 mA; V
CE
= 8 V;
T
amb
= 25
°C;
f = 900 MHz
I
C
= 40 mA; V
CE
= 8 V;
T
amb
= 25
°C;
f = 2 GHz
s
21
2
F
insertion power gain
noise figure
I
C
= 40 mA; V
CE
= 8 V;
T
amb
= 25
°C;
f = 900 MHz
Γ
s
=
Γ
opt
; I
C
= 10 mA; V
CE
= 8 V;
T
amb
= 25
°C;
f = 900 MHz
Γ
s
=
Γ
opt
; I
C
= 40 mA; V
CE
= 8 V;
T
amb
= 25
°C;
f = 900 MHz
Γ
s
=
Γ
opt
; I
C
= 10 mA; V
CE
= 8 V;
T
amb
= 25
°C;
f = 2 GHz
Note
1. T
s
is the temperature at the soldering point of the collector tab.
open emitter
R
BE
= 0
CONDITIONS
MIN.
−
−
−
−
100
−
−
−
−
12
−
−
−
TYP.
−
−
−
−
120
0.6
9
14
7
13
1.3
1.9
2.1
PINNING
PIN
1
2
3
base
emitter
collector
1
Top view
BFR540
DESCRIPTION
NPN silicon planar epitaxial transistor
in a SOT23 plastic package.
fpage
3
DESCRIPTION
2
MSB003
Marking code:
N29.
Fig.1 SOT23.
MAX.
20
15
120
500
250
−
−
−
−
−
1.8
2.4
−
UNIT
V
V
mA
mW
pF
GHz
dB
dB
dB
dB
dB
dB
2000 May 30
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
V
CBO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector tab.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector tab.
PARAMETER
from junction to soldering point
CONDITIONS
see note 1
VALUE
260
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
T
s
≤
70
°C;
note 1
R
BE
= 0
open collector
CONDITIONS
open emitter
−
−
−
−
−
−65
−
MIN.
BFR540
MAX.
20
15
2.5
120
500
150
175
UNIT
V
V
V
mA
mW
°C
°C
UNIT
K/W
2000 May 30
3
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
C
e
C
c
C
re
f
T
G
UM
PARAMETER
collector cut-off current
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
maximum unilateral
power gain; note 1
CONDITIONS
I
E
= 0; V
CB
= 8 V
I
C
= 40 mA; V
CE
= 8 V
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
E
= i
e
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= 40 mA; V
CE
= 8 V; f = 1 GHz
I
C
= 40 mA; V
CE
= 8 V;
T
amb
= 25
°C;
f = 900 MHz
I
C
= 40 mA; V
CE
= 8 V;
T
amb
= 25
°C;
f = 2 GHz
|s
21
|
2
F
insertion power gain
noise figure
I
C
= 40 mA; V
CE
= 8 V;
T
amb
= 25
°C;
f = 900 MHz
Γ
s
=
Γ
opt
; I
C
= 10 mA; V
CE
= 8 V;
T
amb
= 25
°C;
f = 900 MHz
Γ
s
=
Γ
opt
; I
C
= 40 mA; V
CE
= 8 V;
T
amb
= 25
°C;
f = 900 MHz
Γ
s
=
Γ
opt
; I
C
= 10 mA; V
CE
= 8 V;
T
amb
= 25
°C;
f = 2 GHz
P
L1
ITO
V
o
Notes
1. G
UM
is the maximum unilateral power gain, assuming s
12
is zero and
G
UM
s
21
=
10 log ------------------------------------------------------- dB.
-
2
2
(
1
–
s
11
) (
1
–
s
22
)
2
BFR540
MIN.
−
100
−
−
−
−
−
−
12
−
−
−
−
−
−
TYP. MAX. UNIT
−
120
2
0.9
0.6
9
14
7
13
1.3
1.9
2.1
21
34
550
50
250
−
−
−
−
−
−
−
1.8
2.4
−
−
−
−
pF
pF
pF
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
mV
nA
output power at 1 dB gain
compression
third order intercept point
output voltage; note 3
I
C
= 40 mA; V
CE
= 8 V; R
L
= 50
Ω;
T
amb
= 25
°C;
f = 900 MHz
note 2
I
C
= 40 mA; V
CE
= 8 V;
Z
L
= Z
S
= 75
Ω;
T
amb
= 25
°C
2. I
C
= 40 mA; V
CE
= 8 V; R
L
= 50
Ω;
T
amb
= 25
°C;
f = 900 MHz;
f
p
= 900 MHz; f
q
= 902 MHz;
measured at f
(2p−q)
= 898 MHz and f
(2q−p)
= 904 MHz.
3. d
im
=
−60
dB (DIN 45004B);
V
p
= V
O
; V
q
= V
O
−6
dB; f
p
= 795.25 MHz;
V
R
= V
O
−6
dB; f
q
= 803.25 MHz; f
r
= 805.25 MHz;
measured at f
(p+q-r)
= 793.25 MHz; preliminary data.
2000 May 30
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
600
1/2 page (Datasheet)
P tot
(mW)
400
MEA398 - 1
MRA687
handbook, halfpage
250
22 mm
hFE
200
150
100
200
50
0
0
50
100
150
Ts
200
( o C)
0
10
−2
10
−1
1
10 I (mA) 10
2
C
V
CE
= 8 V.
Fig.3
Fig.2 Power derating curve.
DC current gain as a function of collector
current.
handbook, halfpage
1.0
MRA688
Cre
(pF)
handbook, halfpage
12
MRA689
0.8
fT
(GHz)
8
VCE = 8V
0.6
VCE = 4V
0.4
4
0.2
0
0
4
8
VCB (V)
12
0
10
−1
1
10
IC (mA)
10
2
I
C
= 0; f = 1 MHz.
T
amb
= 25
°C;
f = 1 GHz.
Fig.4
Feedback capacitance as a function of
collector-base voltage.
Fig.5
Transition frequency as a function of
collector current.
2000 May 30
5
京公网安备 11010802033920号
EEWORLD
