BFR93AR
NPN 6 GHz wideband transistor
Rev. 01 — 30 November 2006
Product data sheet
1. Product profile
1.1 General description
NPN wideband transistor in a plastic SOT23 package.
PNP complement: BFT93.
1.2 Features
I
Very high power gain
I
Low noise figure
I
Very low intermodulation distortion
1.3 Applications
I
RF wideband amplifiers and oscillators
1.4 Quick reference data
Table 1.
V
CBO
V
CEO
I
C
P
tot
C
re
f
T
G
UM
Quick reference data
Conditions
open emitter
Min
-
-
-
T
sp
≤
95
°C
I
C
= 0 mA; V
CE
= 5 V; f = 1 MHz;
I
C
= 30 mA; V
CE
= 5 V;
f = 500 MHz;
I
C
= 30 mA; V
CE
= 8 V;
T
amb
= 25
°C
f = 1 GHz
f = 2 GHz
NF
V
O
noise figure
output voltage
I
C
= 5 mA; V
CE
= 8 V; f = 1 GHz;
Γ
S
=
Γ
opt
; T
amb
= 25
°C
IMD =
−60
dB; I
C
= 30 mA;
V
CE
= 8 V; R
L
= 75
Ω;
T
amb
= 25
°C;
f
p
+
f
q
−
f
r
= 793.25 MHz
-
-
-
-
13
7
1.9
425
-
-
-
-
dB
dB
dB
mV
-
-
-
Typ
-
-
-
-
0.6
6
Max
15
12
35
300
-
-
Unit
V
V
mA
mW
pF
GHz
collector-base voltage
collector current
total power dissipation
feedback capacitance
transition frequency
unilateral power gain
Symbol Parameter
collector-emitter voltage open base
NXP Semiconductors
BFR93AR
NPN 6 GHz wideband transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
emitter
base
collector
1
2
3
3
2
1
sym026
Simplified outline
Symbol
3. Ordering information
Table 3.
Ordering information
Package
Name
BFR93AR
-
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 4.
BFR93AR
Marking
Marking code
*R5
Description
* = p : made in Hong Kong
* = w : made in China
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature
junction temperature
Conditions
open emitter
open base
open collector
T
sp
≤
95
°C;
see
Figure 2
[1]
Min
-
-
-
-
-
−65
-
Max
15
12
2
35
300
+150
+175
Unit
V
V
V
mA
mW
°C
°C
T
sp
is the temperature at the solder point of the collector pin.
BFR93AR_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 November 2006
2 of 13
NXP Semiconductors
BFR93AR
NPN 6 GHz wideband transistor
6. Thermal characteristics
Table 6.
Symbol
R
th(j-sp)
[1]
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Conditions
T
sp
≤
95
°C
[1]
Typ
260
Unit
K/W
T
sp
is the temperature at the solder point of the collector pin.
7. Characteristics
Table 7.
Symbol
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
Characteristics
Parameter
collector-base cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
unilateral power gain
Conditions
I
E
= 0 A; V
CB
= 5 V
I
C
= 30 mA; V
CE
= 5 V; see
Figure 3
I
E
= i
e
= 0 A; V
CB
= 5 V; f = 1 MHz;
see
Figure 4
I
C
= i
c
= 0 A; V
EB
= 0.5 V; f = 1 MHz
I
C
= i
c
= 0 A; V
CE
= 5 V; f = 1 MHz;
T
amb
= 25
°C
I
C
= 30 mA; V
CE
= 5 V; f = 500 MHz;
see
Figure 5
I
C
= 30 mA; V
CE
= 8 V; T
amb
= 25
°C;
see
Figure 6
to
Figure 9
f = 1 GHz
f = 2 GHz
NF
noise figure
I
C
= 5 mA; V
CE
= 8 V;
Γ
S
=
Γ
opt
;
T
amb
= 25
°C;
see
Figure 12
and
Figure 13
f = 1 GHz
f = 2 GHz
V
O
IMD2
output voltage
second-order intermodulation
distortion
see
Figure 15
[2][3]
[2][4]
[1]
Min
-
40
-
-
-
4.5
Typ
-
90
0.7
1.9
0.6
6
Max
50
-
-
-
-
-
Unit
nA
pF
pF
pF
GHz
-
-
13
7
-
-
dB
dB
-
-
-
-
1.9
3
425
−50
-
-
-
-
dB
dB
mV
dB
[1]
G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
G
UM
S
21
=
10 log
-------------------------------------------------------
dB.
-
2
2
(
1
–
S
11
) (
1
–
S
22
)
2
[2]
[3]
Measured on the same crystal in a SOT37 package (BFR91A).
IMD =
−60
dB (DIN 45004B); I
C
= 30 mA; V
CE
= 8 V; R
L
= 75
Ω;
T
amb
= 25
°C;
V
p
= V
O
at IMD =
−60
dB; f
p
= 795.25 MHz;
V
q
= V
O
−6
dB at f
q
= 803.25 MHz;
V
r
= V
O
−6
dB at f
r
= 805.25 MHz;
measured at f
p
+
f
q
−
f
r
= 793.25 MHz
[4]
I
C
= 30 mA; V
CE
= 8 V; R
L
= 75
Ω;
T
amb
= 25
°C;
V
p
= 200 mV at f
p
= 250 MHz;
V
q
= 200 mV at f
p
= 560 MHz;
measured at f
p
+
f
q
= 810 MHz
BFR93AR_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 November 2006
3 of 13
NXP Semiconductors
BFR93AR
NPN 6 GHz wideband transistor
1.5 nF
+V
BB
1.5 nF
L3
10 kΩ
L2
1 nF
1 nF
L1
1 nF
270
Ω
+V
CC
75
Ω
output
75
Ω
input
DUT
3.3 pF
18
Ω
0.68 pF
mbb251
L1 = L3 = 5
µH
choke.
L2 = 3 turns 0.4 mm copper wire; winding pitch 1 mm; internal diameter 3 mm.
Fig 1. Intermodulation distortion and second harmonic MATV test circuit
400
P
tot
(mW)
300
mra702
120
mcd087
h
FE
80
200
40
100
0
0
0
50
100
150
T
sp
(°C)
200
0
10
20
I
C
(mA)
30
V
CE
= 5 V; T
j
= 25
°C.
Fig 2. Power derating curve
Fig 3. DC current gain as a function of collector
current
BFR93AR_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 November 2006
4 of 13
NXP Semiconductors
BFR93AR
NPN 6 GHz wideband transistor
1
C
c
(pF)
0.8
mbb252
8
f
T
(GHz)
6
mcd089
0.6
4
0.4
2
0.2
0
0
4
8
12
16
V
CB
(V)
0
0
10
20
30
I
C
40
(mA)
I
E
= i
e
= 0 mA; f = 1 MHz; T
j
= 25
°C.
V
CE
= 2 V; f = 500 MHz; T
j
= 25
°C.
Fig 4. Collector capacitance as a function of
collector-base voltage; typical values
30
gain
(dB)
MSG
20
G
UM
mbb255
Fig 5. Transition frequency as a function of collector
current; typical values
mbb256
30
gain
(dB)
20
MSG
G
UM
10
10
0
0
10
20
30
I
C
(mA)
40
0
0
10
20
30
I
C
(mA)
40
V
CE
= 8 V; f = 500 MHz.
V
CE
= 8 V; f = 1 GHz.
Fig 6. Gain as a function of collector current; typical
values
Fig 7. Gain as a function of collector current; typical
values
BFR93AR_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 November 2006
5 of 13
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