DISCRETE SEMICONDUCTORS
DATA SHEET
BFS17W
NPN 1 GHz wideband transistor
Product specification
Supersedes data of November 1992
File under discrete semiconductors, SC14
1995 Sep 04
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
APPLICATIONS
Primarily intended as a mixer,
oscillator and IF amplifier in UHF and
VHF tuners.
DESCRIPTION
Silicon NPN transistor in a plastic
SOT323 (S-mini) package. The
BFS17W uses the same crystal as
the SOT23 version, BFS17.
PINNING
handbook, 2 columns
BFS17W
PIN
1
2
3
base
DESCRIPTION
emitter
collector
1
Top view
Marking code:
E1
3
2
MBC870
Fig.1 SOT323
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
C
c
C
re
T
j
Note
1. T
s
is the temperature at the soldering point of the collector pin.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector pin.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
T
s
= 118
°C;
note 1
open emitter
open base
open collector
CONDITIONS
−
−
−
−
−
−65
−
MIN.
MAX.
25
15
2.5
50
300
+150
175
UNIT
V
V
V
mA
mW
°C
°C
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
collector capacitance
feedback capacitance
junction temperature
up to T
s
= 118
°C;
note 1
I
C
= 2 mA; V
CE
= 1 V
I
C
= 25 mA; V
CE
= 5 V
I
E
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 1 mA; V
CE
= 5 V; f = 1 MHz
CONDITIONS
−
−
−
−
25
−
−
−
−
MIN.
−
−
−
−
90
1.6
0.8
0.75
−
TYP.
MAX.
25
15
50
300
−
−
1.5
−
175
GHz
pF
pF
°C
UNIT
V
V
mA
mW
1995 Sep 04
2
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
°C
(unless otherwise specified).
SYMBOL
I
CBO
h
FE
f
T
C
c
C
e
C
re
F
PARAMETER
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
noise figure
CONDITIONS
I
E
= 0; V
CB
= 10 V
I
C
= 2 mA; V
CE
= 1 V
I
C
= 25 mA; V
CE
= 5 V;
f = 500 MHz
I
E
= i
e
= 0; V
CB
= 10 V;
f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V;
f = 1 MHz
I
B
= i
b
= 0; V
CE
= 5 V;
f = 1 MHz; T
amb
= 25
°C
I
C
= 2 mA; V
CE
= 5 V;
f = 500 MHz;
Γ
S
=
Γ
opt
−
25
−
−
−
−
−
MIN.
−
90
1.6
0.8
2
0.75
4.5
TYP.
−
−
1.5
−
−
−
PARAMETER
thermal resistance from junction to soldering point
CONDITIONS
up to T
s
= 118
°C;
note 1
BFS17W
VALUE
190
UNIT
K/W
MAX.
10
UNIT
nA
GHz
pF
pF
pF
dB
handbook, halfpage
400
MLB587
MBG237
handbook, halfpage
60
P tot
(mW)
300
40
hFE
200
20
100
0
0
50
100
150
200
T s ( o C)
0
10
−1
1
10
IC (mA)
10
2
V
CE
= 1 V.
Fig.3
Fig.2 Power derating curve.
DC current gain as a function of collector
current; typical values.
1995 Sep 04
3
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BFS17W
handbook, halfpage
2
MBG238
2.5
handbook, halfpage
fT
(GHz)
2
MBG239
Cre
(pF)
1.5
1
VCE = 10 V
5V
1.5
0.5
0
0
2
4
6
8
10
VCB (V)
1
1
10
IC (mA)
10
2
I
B
= i
b
= 0; f = 1 MHz.
T
amb
= 25
°C;
f = 500 MHz.
Fig.4
Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.5
Transition frequency as a function
of collector current; typical values.
handbook, halfpage
20
MBG240
F
(dB)
15
10
5
0
10
−3
10
−2
10
−1
1
10
10
2
10
3
f (MHz)
V
CE
= 10 V.
Fig.6
Minimum noise figure as function of
frequency; typical values.
1995 Sep 04
4
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
PACKAGE OUTLINE
BFS17W
handbook, full pagewidth
1.00
max
0.2 M A
0.2 M B
0.4
0.2
A
0.1
max
0.2
3
2.2
2.0
1.35
1.15
1
1.4
1.2
2.2
1.8
2
0.3
0.1
0.25
0.10
B
MBC871
Dimensions in mm.
Fig.7 SOT323.
1995 Sep 04
5
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