DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D088
BAP65-05
Silicon PIN diode
Product specification
2001 May 07
Philips Semiconductors
Product specification
Silicon PIN diode
FEATURES
•
Two elements in common cathode configuration
•
High voltage, current controlled
•
RF resistor for RF switches
•
Low diode capacitance
•
Low diode forward resistance (low loss).
APPLICATIONS
•
RF attenuators and switches
•
Bandswitch for TV tuners
•
Series diode for mobile communication transmit-receive
switch.
3
2
2
1
BAP65-05
PINNING
PIN
1
2
3
DESCRIPTION
anode (a
1
)
anode (a
2
)
common cathode
ook, 4 columns
1
3
DESCRIPTION
Tow planar PIN diodes in a SOT23 small SMD plastic
package.
Top view
MAM108
Marking code:
7Kp.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
V
R
I
F
P
tot
T
stg
T
j
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
T
s
≤
90
°C
−
−
−
−65
−65
30
100
250
+150
+150
V
mA
mW
°C
°C
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
2001 May 07
2
Philips Semiconductors
Product specification
Silicon PIN diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
I
R
C
d
forward voltage
reverse leakage current
diode capacitance
I
F
= 50 mA
V
R
= 20 V
V
R
= 0 V; f = 1 MHz
V
R
= 1 V; f = 1 MHz
V
R
= 3 V; f = 1 MHz
V
R
= 20 V; f = 1 MHz
r
D
diode forward resistance
I
F
= 1 mA; f = 100 MHz
I
F
= 5 mA; f = 100 MHz; note 1
I
F
= 10 mA; f = 100 MHz; note 1
I
F
= 100 mA; f = 100 MHz
|s
21
|
2
isolation
V
R
= 0; f = 900 MHz
V
R
= 0; f = 1800 MHz
V
R
= 0; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 1 mA; f = 900 MHz
I
F
= 1 mA; f = 1800 MHz
I
F
= 1 mA; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 5 mA; f = 900 MHz
I
F
= 5 mA; f = 1800 MHz
I
F
= 5 mA; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 10 mA; f = 900 MHz
I
F
= 10 mA; f = 1800 MHz
I
F
= 10 mA; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 100 mA; f = 900 MHz
I
F
= 100 mA; f = 1800 MHz
I
F
= 100 mA; f = 2450 MHz
τ
L
charge carrier life time
0.9
−
0.7
0.575
0.525
0.425
1
0.65
0.56
0.35
9.4
4.8
3.1
0.1
0.18
0.28
0.08
0.16
0.26
0.07
0.15
0.25
0.06
0.14
0.24
1.1
20
−
0.9
0.8
−
−
PARAMETER
CONDITIONS
TYP.
BAP65-05
MAX.
UNIT
V
nA
pF
pF
pF
pF
Ω
Ω
Ω
Ω
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
µs
0.95
0.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
when switched from I
F
= 10 mA to 0.17
I
R
= 6 mA; R
L
= 100
Ω;
measured at I
R
= 3 mA
I
F
= 100 mA; f = 100 MHz
1.4
L
S
Note
series inductance
−
nH
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
VALUE
220
UNIT
K/W
2001 May 07
3
Philips Semiconductors
Product specification
Silicon PIN diode
GRAPHICAL DATA
BAP65-05
handbook, halfpage
10
MGW093
handbook, halfpage
1000
MGW094
rD
(Ω)
Cd
(fF)
800
600
1
400
200
10
−1
10
−1
1
10
I F (mA)
10
2
0
0
4
8
12
16
VR (V)
f = 1 MHz; T
j
= 25
°C.
20
f = 100 MHz; T
j
= 25
°C.
Fig.2
Forward resistance as a function of
forward current; typical values.
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
2
0
MGW095
MGW096
|
s 21
|
(1)
(2)
handbook, halfpage
2
0
(dB)
−0.1
(3)
|
s 21
|
(dB)
−10
−0.2
(4)
−20
−0.3
−30
−0.4
−0.5
0
1
(3) I
F
= 5 mA.
(4) I
F
= 1 mA.
2
f (GHz)
3
−40
0
1
2
f (GHz)
3
(1) I
F
= 100 mA.
(2) I
F
= 10 mA.
Diode inserted in series with a 50
Ω
stripline circuit and
biased via the analyzer Tee network.
T
amb
= 25
°C.
Diode zero biased and inserted in series with a 50
Ω
stripline circuit.
T
amb
= 25
°C.
Fig.4
Insertion loss (|s
21
|
2
) of the diode in on-state
as a function of frequency; typical values.
Fig.5
Isolation (|s
21
|
2
) of the diode in off-state as a
function of frequency; typical values.
2001 May 07
4
Philips Semiconductors
Product specification
Silicon PIN diode
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
BAP65-05
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
2001 May 07
5
MCU
京公网安备 11010802033920号
EEWORLD
