Power Transistors
www.jmnic.com
BD680
Silicon PNP Transistors
Features
With TO-126 package
In monolithic Darlington configuration
This transistor is intended for use in medium
power linar and switching applications
Complement to type BD679
ECB
Absolute Maximum Ratings Tc=25
SYMBOL
V
CBO
V
CEO
V
CER
V
EB
I
B
I
C
P
D
T
j
T
stg
PARAMETER
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Emitter to base voltage
Base Current
Collector current-Continuous
Total Power Dissipation@TC=25
Junction temperature
Storage temperature
4
40
150
-55~150
A
W
5
V
RATING
80
80
UNIT
V
V
TO-126
Electrical Characteristics Tc=25
SYMBOL
V
CEO(SUS)
V
CBO
I
CEO
I
CBO
I
EBO
V
EBO
V
CE(sat-1)
V
CE(sat-2)
V
CE(sat-3)
h
FE-1
h
FE-2
V
BE(sat-1)
V
BE(sat-2)
f
T
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Base Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Emitter Cutoff Current
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Forward current transfer ratio
Forward current transfer ratio
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
I
C
=1.5A; V
CE
=3V
750
I
C
=1.5A; I
B
=30mA
2.5
V
V
CE
=40V; I
B
=0
V
CB
=80V; I
E
=0
V
EB
=5V; I
C
=0
500
200
2
uA
uA
mA
CONDITIONS
I
C
=50mA; I
B
=0
MIN
80
MAX
UNIT
V
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