DISCRETE SEMICONDUCTORS
DATA SHEET
BF510 to 513
N-channel silicon field-effect
transistors
Product specification
File under Discrete Semiconductors, SC07
December 1997
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
DESCRIPTION
Asymmetrical N-channel planar
epitaxial junction field-effect
transistors in the miniature plastic
envelope intended for applications up
to the v.h.f. range in hybrid thick and
thin-film circuits. Special features are
the low feedback capacitance and the
low noise figure. These features
make the product very suitable for
applications such as the r.f. stages in
f.m. portables (BF510), car radios
(BF511) and mains radios (BF512) or
the mixer stage (BF513).
PINNING - SOT23
1
2
3
= gate
= drain
= source
MARKING CODE
BF510 = S6p
BF511 = S7p
BF512 = S8p
BF513 = S9p
BF510 to 513
handbook, halfpage
3
d
s
g
1
Top view
2
MAM385
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
Drain-source voltage
Drain current (DC or average)
Total power dissipation
up to T
amb
= 40
°C
Drain current
V
DS
= 10 V; V
GS
= 0
Transfer admittance (common source)
V
DS
= 10 V; V
GS
= 0; f = 1 kHz
Feedback capacitance
V
DS
= 10 V; V
GS
= 0
V
DS
= 10 V; I
D
= 5 mA
Noise figure at optimum source admittance
G
S
= 1 mS;
−B
S
= 3 mS; f = 100 MHz
V
DS
= 10 V; V
GS
= 0
V
DS
= 10 V; I
D
= 5 mA
F
F
typ.
typ.
1.5
−
1.5
−
−
1.5
−
dB
1.5 dB
C
rs
C
rs
typ.
typ.
0.3
−
0.3
−
−
0.3
−
pF
0.3 pF
y
fs
>
2.5
4
6
7 mS
I
DSS
P
tot
max.
BF510
>
<
0.7
3.0
250
511
2.5
7.0
512
6
12
513
10 mA
18 mA
mW
V
DS
I
D
max.
max.
20
30
V
mA
December 1997
2
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
Drain-gate voltage (open source)
Drain current (DC or average)
Gate current
Total power dissipation up to T
amb
= 40
°C
(note 1)
Storage temperature range
Junction temperature
THERMAL RESISTANCE
From junction to ambient (note 1)
Note
1. Mounted on a ceramic substrate of 8 mm
×
10 mm
×
0.7 mm.
STATIC CHARACTERISTICS
T
amb
= 25
°C
BF510
Gate cut-off current
−V
GS
= 0.2 V; V
DS
= 0
Gate-drain breakdown voltage
I
S
= 0;
−I
D
= 10
µA
Drain current
V
DS
= 10 V; V
GS
= 0
Gate-source cut-off voltage
I
D
= 10
µA;
V
DS
= 10 V
−V
(P)GS
typ.
0.8
1.5
I
DSS
−V
(BR)GDO
>
>
<
20
0.7
3.0
20
2.5
7.0
−I
GSS
<
10
10
511
512
R
th j-a
=
V
DS
V
DGO
I
D
±
I
G
P
tot
T
stg
T
j
BF510 to 513
max.
max.
max.
max.
max.
max.
20 V
20 V
30 mA
10 mA
250 mW
150
°C
−65
to
+
150
°C
430 K/W
513
10
20
6
12
10 nA
20 V
10 mA
18 mA
2.2
3 V
December 1997
3
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
DYNAMIC CHARACTERISTICS
Measuring conditions (common source):
y-parameters (common source)
Input capacitance at f = 1 MHz
Input conductance at f = 100 MHz
Feedback capacitance at f = 1 MHz
Transfer admittance at f = 1 kHz
V
GS
= 0 instead of I
D
= 5 mA
Transfer admittance at f = 100 MHz
Output capacitance at f = 1 MHz
Output conductance at f = 1 MHz
Output conductance at f = 100 MHz
Noise figure
at optimum source admittance
G
S
= 1 mS;
−B
S
= 3 mS;
f = 100 MHz
F
typ.
1.5
1.5
C
is
g
is
C
rs
y
fs
y
fs
y
fs
C
os
g
os
g
os
<
typ.
typ.
<
>
>
typ.
<
<
typ.
BF510 to 513
V
DS
= 10 V; V
GS
= 0; T
amb
= 25
°C
for BF510 and BF511
V
DS
= 10 V; I
D
= 5 mA; T
amb
= 25
°C
for BF512 and BF513
BF510
5
100
0.4
0.5
2.5
−
3.5
3
60
35
511
5
90
0.4
0.5
4.0
−
5.5
3
80
55
512
5
60
0.4
0.5
4.0
6.0
5.0
3
100
70
513
5 pF
50
µS
0.4 pF
0.5 pF
3.5 mS
7.0 mS
5.0 mS
3 pF
120
µS
90
µS
1.5
1.5 dB
handbook, halfpage
1.5
MDA275
Crs
(pF)
1
10
handbook, halfpage
|y
fs
|
(mS)
8
BF512
MDA276
BF513
BF511
6
BF510
4
0.5
typ
2
0
0
4
8
12
16
20
VDS (V)
0
0
5
10
ID (mA)
15
Fig.2
V
GS
= 0 for BF510 and BF511;
I
D
= 5 mA for BF512 and BF513;
f = 1 MHz; T
amb
= 25
°C.
Fig.3
V
DS
= 10 V; f = 1 kHz; T
amb
= 25
°C;
typical
values.
December 1997
4
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF510 to 513
handbook, halfpage
300
MDA245
Ptot
(mW)
200
100
0
0
40
80
120
200
160
Tamb (°C)
Fig.4 Power derating curve.
December 1997
5
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