DISCRETE SEMICONDUCTORS
DATA SHEET
BFG25A/X
NPN 5 GHz wideband transistor
Product specification
Supersedes data of September 1995
File under Discrete Semiconductors, SC14
1997 Oct 29
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
FEATURES
•
Low current consumption
(100
µA
to 1 mA)
•
Low noise figure
•
Gold metallization ensures
excellent reliability.
APPLICATIONS
•
RF low power amplifiers, such as
pocket telephones, paging
systems, with signal frequencies
up to 2 GHz.
DESCRIPTION
NPN silicon wideband transistor in a
four-lead dual emitter SOT143B
plastic package (cross emitter).
PINNING
PIN
1
2
3
4
DESCRIPTION
collector
emitter
base
emitter
1
Top view
BFG25A/X
handbook, 2 columns
4
3
2
MSB014
Marking code:
V11.
Fig.1 SOT143B.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
G
UM
F
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
maximum unilateral power gain
noise figure
T
s
≤
165
°C
I
C
= 0.5 mA; V
CE
= 1 V
I
C
= 1 mA; V
CE
= 1 V;
f = 500 MHz; T
amb
= 25
°C
I
C
= 0.5 mA; V
CE
= 1 V;
f = 1 GHz; T
amb
= 25
°C
I
C
= 0.5 mA; V
CE
= 1 V;
f = 1 GHz;
Γ
=
Γ
opt
; T
amb
= 25
°C
I
C
= 1 mA; V
CE
= 1 V; f = 1 GHz;
Γ
=
Γ
opt
; T
amb
= 25
°C
CONDITIONS
−
−
−
−
50
3.5
−
−
−
MIN.
−
−
−
−
80
5
18
1.8
2
TYP.
MAX.
8
5
6.5
32
200
−
−
−
−
GHz
dB
dB
dB
UNIT
V
V
mA
mW
1997 Oct 29
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
C
re
f
T
G
UM
F
PARAMETER
collector leakage current
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
noise figure
CONDITIONS
I
E
= 0; V
CB
= 5 V
I
C
= 0.5 mA; V
CE
= 1 V
I
C
= i
c
= 0; V
CB
= 1 V; f = 1 MHz
I
C
= 1 mA; V
CE
= 1 V;
T
amb
= 25
°C;
f = 500 MHz
I
C
= 0.5 mA; V
CE
= 1 V;
f = 1 GHz; T
amb
= 25
°C
I
C
= 0.5 mA; V
CE
= 1 V; f = 1 GHz;
Γ
=
Γ
opt
; T
amb
= 25
°C
I
C
= 1 mA; V
CE
= 1 V; f = 1 GHz;
Γ
=
Γ
opt
; T
amb
= 25
°C
Note
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and G
UM
MIN.
−
50
−
3.5
−
−
−
TYP.
−
80
0.21
5
18
1.8
2
PARAMETER
CONDITIONS
VALUE
320
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
T
s
≤
165
°C;
note 1
open base
open collector
CONDITIONS
open emitter
−
−
−
−
−
−65
−
MIN.
8
5
2
BFG25A/X
MAX.
V
V
V
UNIT
6.5
32
150
175
mA
mW
°C
°C
UNIT
K/W
thermal resistance from junction to soldering point note 1
MAX.
50
200
0.3
−
−
−
−
UNIT
µA
pF
GHz
dB
dB
dB
S
21
=
10 log ------------------------------------------------------------- dB
-
2
2
1
–
S
11
1
–
S
22
2
1997 Oct 29
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
MRC038 - 1
handbook,
40
halfpage
handbook, halfpage
100
MCD138
P tot
(mW)
30
h FE
80
60
20
40
10
20
0
0
50
100
150
Ts (oC)
200
0
10
3
10
2
10
1
1
I C (mA)
10
V
CE
= 1 V.
Fig.3
Fig.2 Power derating curve.
DC current gain as a function of collector
current; typical values.
0.3
handbook, halfpage
C re
(pF)
0.2
MCD139
handbook, halfpage
6
MCD140
fT
(GHz)
4
0.1
2
0
0
2
4
VCB (V)
6
0
0
1
2
3
I C (mA)
4
I
C
= i
c
= 0; f = 1 MHz.
V
CE
= 1 V; f = 500 MHz; T
amb
= 25
°C.
Fig.4
Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.5
Transition frequency as a function of
collector current; typical values.
1997 Oct 29
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
handbook, halfpage
30
MCD141
handbook,
20
halfpage
MCD142
gain
(dB)
G UM
gain
(dB)
15
G UM
20
MSG
MSG
10
10
5
0
0
0.5
1.0
1.5
2.0
2.5
I C (mA)
0
0
0.5
1.0
1.5
2.0
2.5
I C (mA)
V
CE
= 1 V; f = 500 MHz.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
V
CE
= 1 V; f = 1 GHz.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
Fig.6
Gain as a function of collector current;
typical values.
Fig.7
Gain as a function of collector current;
typical values.
handbook,
50
halfpage
MCD143
gain
(dB)
40
G UM
handbook,
50
halfpage
MCD144
gain
(dB)
40
G UM
30
30
20
MSG
10
20
MSG
10
0
10
10
2
10
3
f (MHz)
10
4
0
10
10
2
10
3
f (MHz)
10
4
I
C
= 0.5 mA; V
CE
= 1 V.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
I
C
= 1 mA; V
CE
= 1 V.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
Fig.8
Gain as a function of frequency;
typical values.
Fig.9
Gain as a function of frequency;
typical values.
1997 Oct 29
5
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