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GBJ606F

Description
BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size42KB,2 Pages
ManufacturerHY Electronic
Websitehttp://www.hygroup.com.tw
Download Datasheet Parametric View All

GBJ606F Overview

BRIDGE RECTIFIER DIODE

GBJ606F Parametric

Parameter NameAttribute value
MakerHY Electronic
package instructionR-PSFM-T4
Reach Compliance Codeunknow
ECCN codeEAR99
Is SamacsysN
Minimum breakdown voltage600 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PSFM-T4
Maximum non-repetitive peak forward current175 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current2.8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage600 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1
GBJ606F
GLASS PASSIVATED
BRIDGE RECTIFIERS
FEATURES
Rating 600V PRV
Ideal for printed circuit board
Low forward voltage drop,high current capability
Reliable low cost construction utilizing molded plastic
REVERSE VOLTAGE
FORWARD CURRENT
GBJ
? .134(3.4)
? .122(3.1)
1.193(30.3)
1.169(29.7)
- 600Volts
- 6.0
Amperes
.189(4.8)
.173(4.4)
.150(3.8)
.134(3.4)
.198 MAX
(5.1)
.800(20.3)
.776(19.7)
? .134(3.4)
? .122(3.1)
.114(2.9)
.098(2.5)
.031(0.8)
.023(0.6)
UNIT
V
V
V
A
A
V
μA
A
2
s
pF
technique results in inexpensive product
The plastic material has U/L flammability
.118(3.0)*45°
.094(2.4)
.078(2.0)
.043(1.1)
.035(0.9)
.402(10.2) .303(7.7).303(7.7)
SPACING
.386(9.8) .287(7.3).287(7.3)
Dimensions in inches and (milimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward (with heatsink Note 2)
Rectified Current
@ T
C
=100℃ (without heatsink)
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load (JEDEC Method)
Maximum Forward Voltage at 3.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
I
2
t Rating for Fusing (t<8.3ms)
Typical Junction Capacitance Per Element (Note1)
Operating Temperature Range
Storage Temperature Range
@ T
J
=25℃
@ T
J
=125℃
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
GBJ606F
600
420
600
6.0
2.8
175
0.95
10.0
500
120
55
-55 to +150
-55 to +150
I
FSM
V
F
I
R
I
2
t
C
J
T
J
T
STG
NOTES: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Device mounted on 75mm*75mm*1.6mm Cu plate heatsink.
.165(4.2)
.142(3.6)
.708(18.0)
.669(17.0)
.106(2.7)
.096(2.3)
+
_
~ ~
REV. 1, 18-Oct-2013
.441(11.2)
.425(10.8)
classification 94V-0
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