DISCRETE SEMICONDUCTORS
DATA SHEET
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M3D088
BAP50-05
General purpose PIN diode
Product specification
Supersedes data of 1999 Feb 01
1999 May 10
Philips Semiconductors
Product specification
General purpose PIN diode
FEATURES
•
Two elements in common cathode configuration in a
small-sized plastic SMD package
•
Low diode capacitance
•
Low diode forward resistance.
APPLICATIONS
•
General RF applications.
DESCRIPTION
2
olumns
BAP50-05
PINNING
PIN
1
2
3
DESCRIPTION
anode
anode
common cathode
2
1
1
3
Two planar PIN diodes in common cathode configuration
in a SOT23 small plastic SMD package.
3
Top view
Marking code:
1Cp.
MAM108
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Per diode
V
R
I
F
P
tot
T
stg
T
j
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
T
s
= 90
°C
−
−
−
−65
−65
50
50
250
+150
+150
V
mA
mW
°C
°C
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
1999 May 10
2
Philips Semiconductors
Product specification
General purpose PIN diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
V
R
I
R
C
d
forward voltage
reverse voltage
reverse current
diode capacitance
I
F
= 50 mA
I
R
= 10
µA
V
R
= 50 V
V
R
= 0; f = 1 MHz
V
R
= 1 V; f = 1 MHz
V
R
= 5 V; f = 1 MHz
r
D
diode forward resistance
I
F
= 0.5 mA; f = 100 MHz; note 1
I
F
= 1 mA; f = 100 MHz; note 1
I
F
= 10 mA; f = 100 MHz; note 1
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
−
50
−
−
−
−
−
−
−
0.95
−
−
0.45
0.35
0.3
25
14
3
PARAMETER
CONDITIONS
MIN.
TYP.
BAP50-05
MAX.
UNIT
1.1
−
100
−
0.6
0.5
40
25
5
V
V
nA
pF
pF
pF
Ω
Ω
Ω
VALUE
220
UNIT
K/W
1999 May 10
3
Philips Semiconductors
Product specification
General purpose PIN diode
GRAPHICAL DATA
BAP50-05
10
3
handbook, halfpage
D
(Ω)
10
2
r
MGS317
10
3
handbook, halfpage
Cd
(fF)
MGS318
10
1
10
−2
10
−1
1
I F (mA)
10
10
2
10
−1
1
10
VR (V)
10
2
f = 100 MHz; T
j
= 25
°C.
f = 1 MHz; T
j
= 25
°C.
Fig.2
Forward resistance as a function of the
forward current; typical values.
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
2
0
MGS319
|
S21
|
(1)
(2)
handbook, halfpage
2
0
MGS321
|
S21
|
(dB)
−1
(dB)
−5
(3)
−2
−10
−3
−15
−4
−20
−5
0.5
1
1.5
2
2.5
f (GHz)
3
−25
0.5
1
1.5
2
2.5
f (GHz)
3
(1) I
F
= 10 mA.
(2) I
F
= 1 mA.
(3) I
F
= 0.5 mA.
Diode zero biased and inserted in series with a 50
Ω
stripline circuit.
T
amb
= 25
°C.
Diode inserted in series with a 50
Ω
stripline circuit and
biased via the analyzer Tee network.
T
amb
= 25
°C.
Fig.4
Insertion loss (|S
21
|
2
) of the diode in on-state
as a function of frequency; typical values.
Fig.5
Isolation (|S
21
|
2
) of the diode in off-state as a
function of frequency; typical values.
1999 May 10
4
Philips Semiconductors
Product specification
General purpose PIN diode
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
BAP50-05
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1999 May 10
5
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