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SD060SE45B.T1

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size121KB,2 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Download Datasheet Parametric Compare View All

SD060SE45B.T1 Overview

Rectifier Diode,

SD060SE45B.T1 Parametric

Parameter NameAttribute value
MakerSangdest Microelectronics (Nanjing) Co., Ltd.
package instructionDIE-2
Reach Compliance Codeunknown
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.51 V
JESD-30 codeS-XUUC-N2
Maximum non-repetitive peak forward current55 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formUNCASED CHIP
Maximum repetitive peak reverse voltage45 V
Maximum reverse current300 µA
surface mountYES
technologySCHOTTKY
Terminal formNO LEAD
Terminal locationUPPER

SD060SE45B.T1 Preview

SD060SE45B
TECHNICAL DATA
DATA SHEET D0105 REV. –
SILICON SCHOTTKY RECTIFIER DIE
Applications:
Switching Power Supply
Converters
Free-Wheeling Diodes
Polarity Protection Diode
Features:
Ultra low Reverse Leakage Current
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Electrically / Mechanically Stable during and after Packaging
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Average Forward Current
Peak One Cycle Non-
Repetitive Surge Current
Junction Temperature
Storage Temperature
Symbol
V
RWM
I
F(AV)
I
FSM
T
J
T
stg
Condition
-
50% duty cycle, rectangular
wave form
8.3 ms, Sine pulse
(1)
-
-
Max.
45
3
55
-55 to +125
-55 to +125
Units
V
A
A
C
C
Electrical Characteristics:
Characteristics
Forward Voltage Drop
Reverse Current
Symbol
V
F1
V
F2
I
R1
I
R2
Junction Capacitance
C
T
Condition
@ 3A, Pulse, T
J
= 25
C
@ 3A, Pulse, T
J
= 125
C
@V
R
= 45V, Pulse,
T
J
= 25
C
@V
R
= 45V, Pulse,
T
J
= 125
C
@V
R
= 5V, T
C
= 25
C
f
SIG
= 1MHz,
V
SIG
= 50mV (p-p)
Max.
0.51
0.47
0.3
55
180
Units
V
V
mA
mA
pF
(1)
in SHD package
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
SD060SE45B
TECHNICAL DATA
DATA SHEET D0105 REV. –
Mechanical Dimensions: In Inches
mm
Bottom side metalization Ag-5kA minimum
Top side metalization Ag -25kA minimum
B
A
Bottom side is cathode, top side is anode
Dimension H =0.01050.001(0.270.026) (It can be
customized according to customer requirements)
H
0.060
0.003(1.52
0.08)
A
0.054
0.003(1.37
0.08)
B
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com

SD060SE45B.T1 Related Products

SD060SE45B.T1 SD060SE45B SD060SE45B.T2
Description Rectifier Diode, Rectifier Diode, Rectifier Diode,
Maker Sangdest Microelectronics (Nanjing) Co., Ltd. Sangdest Microelectronics (Nanjing) Co., Ltd. Sangdest Microelectronics (Nanjing) Co., Ltd.
package instruction DIE-2 DIE-2 DIE-2
Reach Compliance Code unknown unknown unknown
Other features FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS
application EFFICIENCY EFFICIENCY EFFICIENCY
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.51 V 0.51 V 0.51 V
JESD-30 code S-XUUC-N2 S-XUUC-N2 S-XUUC-N2
Maximum non-repetitive peak forward current 55 A 55 A 55 A
Number of components 1 1 1
Phase 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 125 °C 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C
Maximum output current 3 A 3 A 3 A
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape SQUARE SQUARE SQUARE
Package form UNCASED CHIP UNCASED CHIP UNCASED CHIP
Maximum repetitive peak reverse voltage 45 V 45 V 45 V
Maximum reverse current 300 µA 300 µA 300 µA
surface mount YES YES YES
technology SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form NO LEAD NO LEAD NO LEAD
Terminal location UPPER UPPER UPPER
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