BLS6G2731-6G
LDMOS S-Band radar power transistor
Rev. 2 — 16 December 2014
Product data sheet
1. Product profile
1.1 General description
6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz
range.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C; t
p
= 100
s;
= 10 %; I
Dq
= 25 mA; in a class-AB
production test circuit.
Mode of operation
pulsed RF
f
(GHz)
2.7 to 3.1
V
DS
(V)
32
P
L
(W)
6
G
p
(dB)
15
D
(%)
33
t
r
(ns)
20
t
f
(ns)
10
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling. You must use a ground strap or touch the PC case or other
grounded source before unpacking or handling the hardware.
1.2 Features and benefits
Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage
of 32 V, an I
Dq
of 25 mA, a t
p
of 100
s
and a
of 10 %:
Output power = 6 W
Power gain = 15 dB
Efficiency = 33 %
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2.7 GHz to 3.1 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
S-Band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency
range
NXP Semiconductors
BLS6G2731-6G
LDMOS S-Band radar power transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Graphic symbol
1
1
2
3
sym112
2
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLS6G2731-6G -
eared flanged ceramic package; 2 mounting holes; 2 leads
Version
SOT975C
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Min
-
0.5
-
65
-
Max
60
+13
3.5
+150
200
Unit
V
V
A
C
C
5. Thermal characteristics
Table 5.
Symbol
R
th(j-case)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L
= 6 W
t
p
= 100
s;
= 10 %
t
p
= 200
s;
= 10 %
t
p
= 300
s;
= 10 %
t
p
= 100
s;
= 20 %
1.56
1.95
2.20
2.00
K/W
K/W
K/W
K/W
Typ
Unit
BLS6G2731-6G
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 16 December 2014
2 of 12
NXP Semiconductors
BLS6G2731-6G
LDMOS S-Band radar power transistor
6. Characteristics
Table 6.
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
Conditions
V
GS
= 0 V; I
D
= 0.18 mA
V
DS
= 10 V; I
D
= 18 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 0.9 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 0.63 A
Min
60
1.4
-
2.7
-
0.81
328
Typ
-
1.8
-
-
-
-
-
Max
-
2.4
1.4
-
140
-
1260
Unit
V
V
A
A
nA
S
m
7. Application information
Table 7.
Application information
Mode of operation: pulsed RF; t
p
= 100
s;
= 10 %; RF performance at V
DS
= 32 V; I
Dq
= 25 mA;
T
case
= 25
C; unless otherwise specified, in a class-AB production circuit.
Symbol
V
CC
G
p
D
t
r
t
f
Parameter
supply voltage
power gain
drain efficiency
rise time
fall time
Conditions
P
L
= 6 W
P
L
= 6 W
P
L
= 6 W
P
L
= 6 W
P
L
= 6 W
Min
-
14
30
-
-
Typ
-
15
33
20
10
Max
32
-
-
50
50
Unit
V
dB
%
ns
ns
BLS6G2731-6G
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 16 December 2014
3 of 12
NXP Semiconductors
BLS6G2731-6G
LDMOS S-Band radar power transistor
Typical impedance
Z
S
2.44
j17.78
2.99
j16.04
3.94
j14.56
5.44
j13.75
6.89
j14.58
Z
L
3.30
j4.14
4.52
j3.72
5.67
j4.67
4.94
j6.39
3.00
j6.56
Table 8.
f
GHz
2.7
2.8
2.9
3.0
3.1
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
7.1 Ruggedness in class-AB operation
The BLS6G2731-6G is capable of withstanding a load mismatch corresponding to
VSWR = 5 : 1 through all phases under the following conditions: V
DS
= 32 V; I
Dq
= 25 mA;
P
L
= 6 W; t
p
= 100
s;
= 10 %.
BLS6G2731-6G
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 16 December 2014
4 of 12
NXP Semiconductors
BLS6G2731-6G
LDMOS S-Band radar power transistor
7.2 Graphs
18
G
p
(dB)
(2)
(1)
001aaj447
18
G
p
(dB)
16
001aaj448
16
(2)
(1)
14
(3)
14
(3)
12
0
6
12
P
L
(W)
18
12
0
6
12
P
L
(W)
18
V
DS
= 32 V; I
Dq
= 25 mA; t
p
= 300
s;
= 10 %.
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
V
DS
= 32 V; I
Dq
= 25 mA; t
p
= 100
s;
= 20 %.
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
Fig 2.
Power gain as a function of load power; typical
values
70
001aaj449
(1)
(2)
Fig 3.
Power gain as a function of load power; typical
values
70
001aaj450
(1)
η
D
(%)
60
50
(3)
η
D
(%)
60
(2)
50
(3)
40
30
20
10
0
0
6
12
P
L
(W)
18
40
30
20
10
0
0
6
12
P
L
(W)
18
V
DS
= 32 V; I
Dq
= 25 mA; t
p
= 300
s;
= 10 %.
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
V
DS
= 32 V; I
Dq
= 25 mA; t
p
= 100
s;
= 20 %.
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
Fig 4.
Drain efficiency as a function of load power;
typical values
Fig 5.
Drain efficiency as a function of load power;
typical values
BLS6G2731-6G
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 16 December 2014
5 of 12
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