BLS8G2731L-400P;
BLS8G2731LS-400P
LDMOS S-band radar power transistor
Rev. 1 — 26 May 2015
Product data sheet
1. Product profile
1.1 General description
400 W LDMOS power transistor for S-band radar applications in the frequency range from
2.7 GHz to 3.1 GHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C; t
p
= 50
s;
= 2 %; I
Dq
= 200 mA; in a class-AB demo test
circuit.
Test signal
pulsed RF
f
(GHz)
2.7 to 2.9
2.9 to 3.1
2.7 to 3.1
[1]
[2]
at 1 dB gain compression.
at 2 dB gain compression.
V
DS
(V)
32
32
32
P
L(1dB)
(W)
540
490
530
G
p
[1]
(dB)
11
12
12
D
[1]
(%)
45
47
45
P
L(2dB)
(W)
610
550
590
G
p
[2]
(dB)
10
11
11
D
[2]
(%)
46
49
47
1.2 Features and benefits
High efficiency
Excellent ruggedness
Designed for S-band operation
Excellent thermal stability
Easy power control
Integrated dual sided ESD protection enables excellent off-state isolation
High flexibility with respect to pulse formats
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-band radar applications in the frequent range 2.7 GHz to 3.1 GHz
NXP Semiconductors
BLS8G2731L(S)-400P
LDMOS S-band radar power transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1]
Simplified outline
Graphic symbol
BLS8G2731L-400P (SOT539A)
BLS8G2731LS-400P (SOT539B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
[1]
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLS8G2731L-400P
-
Version
flanged balanced ceramic package; 2 mounting holes; SOT539A
4 leads
earless flanged balanced ceramic package; 4 leads
SOT539B
Type number
BLS8G2731LS-400P -
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
[1]
Min
-
6
65
-
Max
65
+11
+150
225
Unit
V
V
C
C
Continuous use at maximum temperature will affect the reliability. For details refer to the on-line MTF
calculator.
BLS8G2731L-400P_LS-400P
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 26 May 2015
2 of 13
NXP Semiconductors
BLS8G2731L(S)-400P
LDMOS S-band radar power transistor
5. Thermal characteristics
Table 5.
Z
th(j-mb)
Thermal characteristics
Conditions
T
case
= 85
C;
P
L
= 400 W
t
p
= 100
s;
= 10 %
t
p
= 200
s;
= 10 %
t
p
= 300
s;
= 10 %
t
p
= 100
s;
= 20 %
0.067 K/W
0.083 K/W
0.091 K/W
0.082 K/W
Typ
Unit
transient thermal impedance from junction
to mounting base
Symbol Parameter
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
Conditions
V
GS
= 0 V; I
D
= 3 mA
V
DS
= 10 V; I
D
= 300 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 15.0 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 10.5 A
Min
65
1.5
-
-
-
-
-
Typ
-
1.9
-
51
-
21
0.058
Max
-
2.3
2.8
-
280
-
-
Unit
V
V
A
A
nA
S
Table 7.
RF characteristics
Test signal: pulsed RF; f = 3.1 GHz; t
p
= 300
s;
= 10 %; RF performance at V
DS
= 32 V;
I
Dq
= 200 mA; T
case
= 25
C; unless otherwise specified, in a class-AB narrow band production
circuit.
Symbol
G
p
D
RL
in
P
droop(pulse)
t
r
t
f
P
L(2dB)
Parameter
power gain
drain efficiency
input return loss
pulse droop power
rise time
fall time
output power at 2 dB gain compression
Conditions
P
L
= 400 W
P
L
= 400 W
P
L
= 400 W
P
L
= 400 W
P
L
= 400 W
P
L
= 400 W
Min
43
-
-
-
-
400
Typ
47
8
0
5
5
-
Max Unit
-
-
-
0.5
50
50
-
dB
%
dB
dB
ns
ns
W
10.3 13
BLS8G2731L-400P_LS-400P
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 26 May 2015
3 of 13
NXP Semiconductors
BLS8G2731L(S)-400P
LDMOS S-band radar power transistor
7. Test information
7.1 Ruggedness in class-AB operation
The BLS8G2731L-400P and BLS8G2731LS-400P are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
DS
= 32 V; I
Dq
= 200 mA; P
L
= 400 W; t
p
= 300
s;
= 10 %.
7.2 Impedance information
Table 8.
f
(GHz)
2.7
2.9
3.1
[1]
Typical impedance
Z
S[1]
()
1.0
7.0j
1.5
8.5j
4.0
9.0j
Z
L[1]
()
1.8
4.9j
2.5
5.2j
3.6
4.7j
Impedances are taken at a single halve of the push-pull transistor
Fig 1.
Definition of transistor impedance
BLS8G2731L-400P_LS-400P
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 26 May 2015
4 of 13
NXP Semiconductors
BLS8G2731L(S)-400P
LDMOS S-band radar power transistor
7.3 Test circuit
Printed-Circuit Board (PCB): Rogers RO3003; thickness = 0.508 mm.
See
Table 9
for a list of components.
Fig 2.
Component layout for class-AB production test circuit
Table 9.
List of components
For test circuit see
Figure 2.
Component
C1, C2
C3, C10
C4, C9
C5, C8
C6, C7
C11, C12
C15, C20
C16, C21
C17,C22
C23, C24
R1, R9
R2, R3
R4, R6
R5
R7, R8
BLS8G2731L-400P_LS-400P
Description
Value
Remarks
ATC: ATC600F5R6
Murata: GRM2165C1H221JA01D
Murata: GRM216R71H103KA01D
Murata: GRM21BR71H104KA01L
Murata: GRM21BR61A106KE19L
ATC: ATC600F150
Passive Plus: 1111N220GW501
Passive Plus: 1111N561GW501
Murata: GRM31B7U2E103JW31L
Murata: GRM32DR72E104KW01L
Panasonic: EEV-TG1J471M
EMC: SMT2010TALN
Vishay Dale: CRCW08059R10FKEA
Vishay Dale: CRCW08055R10FKEA
Vishay Dale:
CRCW2010510RFKEFHP
Susumu: RL7520WT-R010-F
© NXP Semiconductors N.V. 2015. All rights reserved.
multilayer ceramic chip capacitor 5.6 pF
multilayer ceramic chip capacitor 220 pF, 50 V
multilayer ceramic chip capacitor 10 nF, 50 V
multilayer ceramic chip capacitor 100 nF, 50 V
multilayer ceramic chip capacitor 10
F,
10 V
multilayer ceramic chip capacitor 15 pF
electrolytic capacitor
560 pF
C13, C14, C18, C19, C25, C26 multilayer ceramic chip capacitor 22 pF
multilayer ceramic chip capacitor 0.01
F,
250 V
multilayer ceramic chip capacitor 0.1
F,
250 V
electrolytic capacitor
resistor
shunt resistor
shunt resistor
shunt resistor
resistor
470
F,
63 V
50
9.1
5.1
510
0.01
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 1 — 26 May 2015
5 of 13
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