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IRHY7230CM_15

Description
Simple Drive Requirements
File Size136KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet View All

IRHY7230CM_15 Overview

Simple Drive Requirements

PD-91273E
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
Part Number
Radiation Level
IRHY7230CM 100K Rads (Si)
IRHY3230CM 300K Rads (Si)
IRHY4230CM 500K Rads (Si)
IRHY8230CM 1000K Rads (Si)
R
DS(on)
0.40Ω
0.40Ω
0.40Ω
0.40Ω
IRHY7230CM
JANSR2N7381
200V, N-CHANNEL
REF:MIL-PRF-19500/614
RAD-Hard HEXFET
TECHNOLOGY
®
I
D
QPL Part Number
9.4A JANSR2N7381
9.4A JANSF2N7381
9.4A JANSG2N7381
9.4A JANSH2N7381
International Rectifier’s RAD-Hard HEXFET
®
technology
provides high performance power MOSFETs for
space applications. This technology has over a
decade of proven performance and reliability in
satellite applications. These devices have been
characterized for both Total Dose and Single Event
Effects (SEE). The combination of low Rds(on) and
low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
TO-257AA
Features:
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
À
PD @ T C = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
9.4
6.0
37.6
75
0.6
±20
150
9.4
7.5
16
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063 in.(1.6mm) from case for 10s)
7.0 (Typical)
g
www.irf.com
1
05/16/06
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