CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C963J3
Issued Date : 2015.06.24
Revised Date :
Page No. : 1/ 9
MTEB6N20KJ3
Features
•
Low On Resistance
•
Simple Drive Requirement
•
Low Gate Charge
•
Fast Switching Characteristic
•
ESD Protected Gate
•
Pb-free lead plating and halogen-free package
BV
DSS
I
D
@V
GS
=10V, T
C
=25°C
I
D
@V
GS
=10V, T
A
=25°C
R
DS(ON)
@V
GS
=10V, I
D
=3A
200V
8.8A
2A
213 mΩ(typ)
Symbol
MTEB6N20KJ3
Outline
TO-252(DPAK)
G
D S
G：Gate D：Drain S：Source
Ordering Information
Device
MTEB6N20KJ3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape& reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTEB6N20KJ3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C)
Parameter
Drain-Source Voltage
(Note 1)
Gate-Source Voltage
Continuous Drain Current @T
C
=25°C, V
GS
=10V
Continuous Drain Current @T
C
=100°C, V
GS
=10V
Continuous Drain Current @T
A
=25°C, V
GS
=10V
Continuous Drain Current @T
A
=70°C, V
GS
=10V
Pulsed Drain Current @ V
GS
=10V
Avalanche Current
Single Pulse Avalanche Energy @ L=5mH, I
D
=3A, V
DD
=50V
T
C
=25°C
T
C
=100°C
Power Dissipation
T
A
=25°C
T
A
=70°C
Operating Junction and Storage Temperature
Symbol
V
DS
V
GS
(Note 1)
(Note 1)
(Note 2)
(Note 2)
(Note 3)
Spec. No. : C963J3
Issued Date : 2015.06.24
Revised Date :
Page No. : 2/ 9
I
D
I
DSM
I
DM
I
AS
E
AS
P
D
P
DSM
Tj, Tstg
(Note 1)
(Note 1)
(Note 2)
(Note 2)
Limits
200
±20
8.8
5.6
2.0
1.6
24
3
22.5
50
20
2.5
1.6
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
(Note 2)
Symbol
R
θJC
R
θJA
Value
2.5
50
Unit
°C/W
Note : 1
.
The power dissipation P
D
is based on T
J(MAX)
=150
°
C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2
.
The value of R
θJA
is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with T
A
=25
°
C. The power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction
temperature of 150°C.
3
.
Pulse width limited by junction temperature T
J(MAX)
=150
°
C. Ratings are based on low frequency and low duty cycles
to keep initial T
J
=25
°
C.
MTEB6N20KJ3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
*G
FS
I
GSS
I
DSS
Min.
200
-
2
-
-
-
-
-
Typ.
-
0.2
-
4
-
-
-
213
19.7
4.1
7.8
12.6
66.4
36.6
77.4
767
57
36
7.8
-
0.76
44
79
Max.
-
-
4
-
±
10
1
10
280
29.6
-
-
-
-
-
-
-
-
-
-
8.8
1.2
-
-
Unit
V
V/°C
V
S
μA
m
Ω
Test Conditions
Spec. No. : C963J3
Issued Date : 2015.06.24
Revised Date :
Page No. : 3/ 9
*R
DS(ON)
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*t
d(ON)
-
*tr
-
*t
d(OFF)
-
*t
f
-
Ciss
-
Coss
-
Crss
-
Rg
-
Source-Drain Diode
*I
S
-
*V
SD
-
*trr
-
*Qrr
-
V
GS
=0V, I
D
=250μA
Reference to 25°C, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=15V, I
D
=2A
V
GS
=
±
20V
V
DS
=200V, V
GS
=0V
V
DS
=200V, V
GS
=0V, Tj=85°C
V
GS
=10V, I
D
=3A
nC
V
DD
=160V, I
D
=3A,V
GS
=10V
ns
V
DS
=100V, I
D
=3A, V
GS
=10V, R
G
=25
Ω
pF
Ω
A
V
ns
nC
V
GS
=0V, V
DS
=25V, f=1MHz
f=1MHz
I
S
=2A, V
GS
=0V
V
GS
=0, I
F
=3A, dI
F
/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
Recommended soldering footprint
MTEB6N20KJ3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
18
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C963J3
Issued Date : 2015.06.24
Revised Date :
Page No. : 4/ 9
Brekdown Voltage vs Ambient Temperature
1.4
16
I
D
, Drain Current (A)
14
12
10
8
6
4
2
0
0
5
10
15
V
DS
, Drain-Source Voltage(V)
20
5.5V
V
GS
=5V
6V
10V,9V,8V,7V,6.5V
1.2
1
0.8
0.6
0.4
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
I
D
=250
μ
A,
V
GS
=0V
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
V
GS
=0V
1000
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
1
Tj=25°C
V
GS
=6V
0.8
0.6
Tj=150°C
0.4
0.2
V
GS
=10V
100
0.01
0.1
1
10
I
D
, Drain Current(A)
100
0
2
4
6
8
I
DR
, Reverse Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
700
600
500
400
300
200
100
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
2.4
R
DS(on)
, Normalized Static Drain-
Source On-State Resistance
R
DS(on)
, Static Drain-Source On-
State Resistance(mΩ)
I
D
=3A
2
1.6
1.2
0.8
0.4
0
V
GS
=10V, I
D
=3A
R
DS(ON)
@Tj=25°C : 213mΩ
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTEB6N20KJ3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
V
GS(th)
, Normalized Threshold Voltage
10000
1.4
1.2
Spec. No. : C963J3
Issued Date : 2015.06.24
Revised Date :
Page No. : 5/ 9
Threshold Voltage vs Junction Tempearture
Capacitance---(pF)
1000
Ciss
I
D
=1mA
1
0.8
0.6
0.4
I
D
=250μA
C
oss
100
Crss
10
0.1
1
10
V
DS
, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
10
100
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
V
DS
=160V
G
FS
, Forward Transfer Admittance(S)
V
GS
, Gate-Source Voltage(V)
8
6
V
DS
=100V
1
4
2
0.1
V
DS
=15V
Ta=25°C
Pulsed
I
D
=3A
0.01
0.001
0
0.01
0.1
1
I
D
, Drain Current(A)
10
0
4
8
12
16
Qg, Total Gate Charge(nC)
20
Maximum Safe Operating Area
100
Maximum Drain Current vs Case Temperature
10
9
I
D
, Maximum Drain Current(A)
I
D
, Drain Current(A)
10
R
DSON
Limited
100
μ
s
1ms
10ms
100m
8
7
6
5
4
3
2
1
0
25
Tj(max)=150°C, V
GS
=10V,
R
θ
JC
=2.5°C/W
1
1s
DC
0.1
T
C
=25°C, Tj=150°C
V
GS
=10V, R
θ
JC
=2.5°C/W
Single Pulse
0.01
0.1
10
100
V
DS
, Drain-Source Voltage(V)
1
1000
50
75
100
125
150
175
T
C
, Case Temperature(°C)
MTEB6N20KJ3
CYStek Product Specification
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