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BSM50GB160D

Description
Insulated Gate Bipolar Transistor, 50A I(C), 1600V V(BR)CES, N-Channel,
CategoryDiscrete semiconductor    The transistor   
File Size97KB,1 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BSM50GB160D Overview

Insulated Gate Bipolar Transistor, 50A I(C), 1600V V(BR)CES, N-Channel,

BSM50GB160D Parametric

Parameter NameAttribute value
MakerSIEMENS
package instructionFLANGE MOUNT, R-PUFM-X7
Reach Compliance Codeunknown
Maximum collector current (IC)50 A
Collector-emitter maximum voltage1600 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 codeR-PUFM-X7
Number of components2
Number of terminals7
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment300 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON
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