Cree
®
UltraThin™ LED
Data Sheet
CxxxUT200-Sxxxx
Cree’s UltraThin LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC
®
substrate to deliver
superior price/performance for blue LEDs. These vertically structured LED chips are small in size and require a low
forward voltage. Cree’s UT™ series chips are tested for conformity to optical and electrical specifications and the
ability to withstand 1000 V ESD. Applications include keypad backlighting where sub-miniaturization and thinner
form factors are required.
FEATURES
•
•
Small Chip – 200 x 200 x 85 μm
UT LED Performance
–
•
5.5 mW min. (455–475 nm) Blue
APPLICATIONS
•
•
•
•
Mobile Phone Keypads
Audio Product Display Lighting
Mobile Appliance Keypads
Automotive Applications
Low Forward Voltage
–
2.9 V Typical at 5 mA
•
•
Single Wire Bond Structure
Class 2 ESD Rating
CxxxUT200-Sxxxx Chip Diagram
Top View
G•SiC LED Chip
200 x 200 μm
Mesa (junction)
150 x 150 μm
Gold Bond Pad
90 μm Diameter
Bottom View
SiC Substrate
Bottom Surface
115 x 115 μm
SiC Substrate
h = 85 μm
Backside
Metallization
80 x 80 μm
Die Cross Section
InGaN
Anode (+)
.-
CPR3DE Rev
Data Sheet:
Cathode (-)
Subject to change without notice.
www.cree.com
Maximum Ratings at T
A
= 25°C
Notes &3
DC Forward Current
Peak Forward Current (1/10 duty cycle @ 1 kHz)
LED Junction Temperature
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Electrostatic Discharge Threshold (HBM)
Note 2
Note 2
CxxxUT200-Sxxxx
30 mA
100 mA
125°C
5V
-40°C to +100°C
-40°C to +100°C
1000 V
Class 2
Note 3
Electrostatic Discharge Classification (MIL-STD-883E)
Typical Electrical/Optical Characteristics at T
A
= 25°C, If = 5 mA
Part Number
Forward Voltage (V
f
, V)
Min.
C460UT200-Sxxxx
C470UT200-Sxxxx
Mechanical Specifications
Description
P-N Junction Area (μm)
Top Area (μm)
Bottom Area (Substrate) (μm)
Chip Thickness (μm)
Au Bond Pad Diameter (μm)
Au Bond Pad Thickness (μm)
Back Contact Metal Area (μm)
2.7
2.7
Typ.
2.9
2.9
Max.
3.1
3.1
Reverse Current
[I(Vr=5 V), μA]
Max.
2
2
Full Width Half Max
(λ
D
, nm)
Typ.
21
22
CxxxUT200-Sxxxx
Dimension
150 x 150
200 x 200
115 x 115
85
90
1.2
80 x 80
Tolerance
± 25
± 25
± 25
± 10
-5, +15
± 0.5
± 25
Notes:
1.
2.
3.
4.
Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000
epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die
but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1
3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing
temperature must not exceed 325°C (< 5 seconds).
Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the minimum ESD ratings shown. The ESD classification of
Class 2 is based on sample testing according to MIL-STD-883E.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 5 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by manufacturer in large quantities and are provided for information only. All
measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an
integrating sphere using Illuminance E.
Caution: To obtain optimum output efficiency, the amount of epoxy used should be characterized based upon the specific
application.
Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
2
CPR3DE Rev. -
Standard Bins for CxxxUT200-Sxxxx
LED chips are sorted to the
radiant flux
and
dominant wavelength
bins shown. Sorted die sheets contain die from
only one bin. Sorted die kit (CxxxUT200-Sxxxx)
orders may be filled with any or all bins (CxxxUT200-xxxx)
contained
in the kit. All radiant flux values are measured at If = 20 mA and all dominant wavelength values are measured at If =
5 mA.
UT-5.5
C460UT200-S0550
Radiant Flux
8.0 mW
5.5 mW
455 nm
C460UT200-0201
C460UT200-0202
C460UT200-0203
C460UT200-0204
457.5 nm
460 nm
Dominant Wavelength
462.5 nm
465 nm
C470UT200-S0550
Radiant Flux
8.0 mW
5.5 mW
465 nm
C470UT200-0201
C470UT200-0202
C470UT200-0203
C470UT200-0204
467.5 nm
470 nm
Dominant Wavelength
472.5 nm
475 nm
UT-8.0
C460UT200-S0800
Radiant Flux
8.0 mW
455 nm
C460UT200-0205
C460UT200-0206
C460UT200-0207
C460UT200-0208
457.5 nm
460 nm
Dominant Wavelength
462.5 nm
465 nm
C470UT200-S0800
Radiant Flux
8.0 mW
465 nm
C470UT200-0205
C470UT200-0206
C470UT200-0207
C470UT200-0208
467.5 nm
470 nm
Dominant Wavelength
472.5 nm
475 nm
Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
3
CPR3DE Rev. -
Characteristic Curves
These are representative measurements for the UT200 product. Actual curves will vary slightly for the various radiant
flux and dominant wavelength bins.
Forward Current vs Forward Voltage
30
25
Wavelength Shift vs Forward Current
8.0
4.0
20
15
10
5
0
0.0
1.0
2.0
Vf (V)
3.0
4.0
5.0
Shift (nm)
If (mA)
0.0
-4.0
-8.0
0
5
10
15
If (mA)
20
25
30
Relative Intensity vs Forward Current
450
Relative Intensity (%)
0
5
10
15
If (mA)
20
25
30
400
% Relative Intensity
350
300
250
200
150
100
50
0
Relative Intensity vs. Peak Wavelength
100%
80%
60%
40%
20%
0%
320
360
400
440
480
520
560
600
640
680
Wavelength (nm)
Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
4
CPR3DE Rev. -
Radiation Pattern
This is a representative radiation pattern for the UltraThin Chip LED product. Actual patterns will vary slightly for each
chip.
Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
5
CPR3DE Rev. -
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