PD-93970
SCHOTTKY RECTIFIER
HIGH EFFICIENCY SERIES
30LJQ100
30 Amp, 100V
Major Ratings and Characteristics
Description/Features
The 30LJQ100 Schottky rectifier has been expressly
designed to meet the rigorous requirements of hi-rel
environments. It is packaged in the hermetic surface mount
SMD-0.5 ceramic package. The device's forward voltage
drop and reverse leakage current are optimized for the
lowest power loss and the highest circuit efficiency for typical
high frequency switching power supplies and resonent
power converters. Full
MIL-PRF-19500 quality
conformance testing is available on source control
drawings to TX, TXV and S quality levels.
•
•
•
•
Hermetically Sealed
Low Forward Voltage Drop
High Frequency Operation
Guard Ring for Enhanced Ruggedness and Long term
Reliability
• Surface Mount
• Lightweight
Characteristics
I
F(AV)
V
RRM
I
FSM
@ tp = 8.3ms half-sine
V
F
@ 20Apk, T
J
=125°C
30LJQ100
30
Units
A
100
250
0.73
V
A
V
T
J
, T
stg
Operating and storage
-55 to 150
°C
CASE STYLE
CATHODE ANODE ANODE
IR Case Style SMD-0.5
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1
10/04/00
30LJQ100
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
30LJQ100
100
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
See Fig. 5
I
FSM
Max. Peak One Cycle Non - Repetitive
Surge Current
250
A
@ t
p
= 8.3 ms half-sine
Limits
30
Units
A
Conditions
50% duty cycle @ T
C
= 88°C, square waveform
Electrical Specifications
Parameters
V
FM
Max. Forward Voltage Drop
See Fig. 1
Limits
0.98
1.11
1.43
0.90
1.04
1.35
0.73
0.81
1.03
Units
V
V
V
V
V
V
V
V
V
mA
mA
mA
pF
nH
@ 20A
@ 30A
@ 60A
@ 20A
@ 30A
@ 60A
@ 20A
@ 30A
@ 60A
T
J
= 25°C
T
J
= 100°C
T
J
= 125°C
Conditions
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
I
RM
Max. Reverse Leakage Current
See Fig. 2
0.04
1.8
7.0
V
R
= rated V
R
C
T
L
S
Max. Junction Capacitance
Typical Series Inductance
450
4.8
V
R
= 5V
DC
( 1MHz, 25°C )
Measured from center of cathode pad to center of
anode pad
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max.Junction Temperature Range
Max. Storage Temperature Range
to Case
wt
Weight (Typical)
Die Size (Typical)
Case Style
Pulse Width < 300µs, Duty Cycle < 2%
Pins 2 and 3 externally tied together
1.0
105X125
SMD-0.5
g
mils
Limits Units
-55 to 150
-55 to 150
2.0
°C
°C
°C/W
DC operation
Conditions
R
thJC
Max. Thermal Resistance, Junction
See Fig. 4
2
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30LJQ100
10
125°C
Reverse Current - IR ( mA )
1
100°C
75°C
100
0.1
0.01
25°C
0.001
0.0001
Instantaneous Forward Current - I F (A)
0
10
20
30
40
50
60
70
80
90
100
Reverse Voltage - V (V)
R
10
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
Tj = 125°C
Tj = 25°C
1000
Tj = -55°C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Forward Voltage Drop - V F (V)
Junction Capacitance - C (pF)
T
T J = 25°C
Fig. 1 - Max. Forward Voltage Drop Characteristics
100
0
10
20
30
40
50
60
70
80
90
100
Reverse Voltage -V (V)
R
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
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3
30LJQ100
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.05
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
t
2
0.1
0.02
0.01
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
180
Allowable Case Temprature - (°C)
160
30LJQ100
140
120
100
80
60
40
20
0
0
10
20
30
40
50
R thJC = 2.0°C/W
DC
Average Forward Current - I F(AV) (A)
Fig. 5 - Max. Allowable Case Temperature Vs.
Average Forward Current
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IR TAIWAN:16
Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 10/00
4
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