PD -93972
SCHOTTKY RECTIFIER
HIGH EFFICIENCY SERIES
80SCLQ045
80 Amp, 45V
Major Ratings and Characteristics
Characteristics
I
F(AV)
V
RRM
(Per Leg)
I
FSM
@ tp = 8.3ms half-sine
(Per Leg)
V
F
@ 40Apk, T
J
=125°C
(Per Leg)
80SCLQ045 Units
80
45
A
V
Description/Features
The 80SCLQ045 center tap Schottky rectifier has been
expressly designed to meet the rigorous requirements of hi-
rel environments. It is packaged in the hermetic surface
mount SMD-1 ceramic package. The device's forward
voltage drop and reverse leakage current are optimized
for the lowest power loss and the highest circuit efficiency
for typical high frequency switching power supplies and
resonent power converters. Full MIL-PRF-19500 quality
conformance testing is available on source control
drawings to TX, TXV and S quality levels.
•
•
•
•
•
Hermetically Sealed
Center Tap
Low Forward Voltage Drop
High Frequency Operation
Guard Ring for Enhanced Ruggedness and Long term
Reliability
• Surface Mount
• Lightweight
250
0.62
A
V
T
J
, T
stg
Operating and storage
-55 to 150
°C
CASE STYLE
2
1
3
ANODE COMMONANODE
CATHODE
IR Case Style SMD-1
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1
10/06/00
80SCLQ045
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V) (Per Leg)
V
RWM
Max. Working Peak Reverse Voltage (V) (Per Leg)
80SCLQ045
45
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
See Fig. 5
I
FSM
Max. Peak One Cycle Non - Repetitive
Surge Current (Per Leg)
250
A
@ t
p
= 8.3 ms half-sine
Limits
80
Units
A
Conditions
50% duty cycle @ T
C
= 84°C, square waveform
Electrical Specifications
Parameters
V
FM
Max. Forward Voltage Drop
(Per Leg) See Fig. 1
Limits
0.62
0.67
0.70
0.85
0.57
0.63
0.66
0.88
0.53
0.62
0.64
0.87
Units
V
V
V
V
V
V
V
V
V
V
V
V
mA
mA
mA
pF
nH
@ 30A
@ 40A
@ 45A
@ 80A
@ 30A
@ 40A
@ 45A
@ 80A
@ 30A
@ 40A
@ 45A
@ 80A
T
J
= 25°C
T
J
= 100°C
T
J
= 125°C
Conditions
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
I
RM
Max. Reverse Leakage Current
(Per Leg) See Fig. 2
0.6
80
195
2000
5.9
V
R
= rated V
R
C
T
L
S
Max. Junction Capacitance (Per Leg)
Typical Series Inductance (Per Leg)
V
R
= 5V
DC
( 1MHz, 25°C )
Measured from center of cathode pad to center of
anode pad
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max.Junction Temperature Range
Max. Storage Temperature Range
to Case (Per Leg)
R
thJC
Max. Thermal Resistance, Junction
to Case (Per Package)
wt
Weight (Typical)
Die Size (Typical)
Case Style
Pulse Width < 300µs, Duty Cycle < 2%
2.6
150X180
SMD-1
g
mils
0.63
°C/W
DC operation
Limits Units
-55 to 150
-55 to 150
1.25
°C
°C
°C/W
DC operation
Conditions
R
thJC
Max. Thermal Resistance, Junction
See Fig. 4
2
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80SCLQ045
1000
Reverse Current - I R ( mA )
100
125°C
100°C
100
10
75°C
1
0.1
25°C
0.01
Instantaneous Forward Current - I F (A)
0
10
20
30
40
50
Reverse Voltage - V R (V)
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage (Per Leg)
10
Tj = 125°C
10000
Tj = 25°C
Junction Capacitance - CT (pF)
T J = 25°C
1000
Tj = -55°C
1
0.0
0.2
0.4
0.6
0.8
1.0
Forward Voltage Drop - V F (V)
100
0
10
20
30
40
50
Fig. 1 - Max. Forward Voltage Drop Characteristics
(Per Leg)
Reverse Voltage -VR (V)
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage (Per Leg)
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3
80SCLQ045
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
0.01
0.00001
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics (Per Leg)
180
Allowable Case Temprature - (°C)
160
140
120
100
80
60
40
20
0
0
20
40
60
80SCLQ045
R thJC = 1.25°C/W
DC
80
100
120
Average Forward Current - I F(AV) (A)
Fig. 5 - Max. Allowable Case Temperature Vs.
Average Forward Current (Per Leg)
IR WORLD HEADQUARTERS:
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IR TAIWAN:16
Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 10/00
4
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