NXP Semiconductors
Product data sheet
Low-leakage double diode
FEATURES
•
Small plastic SMD package
•
Low leakage current: typ. 3 pA
•
Switching time: typ. 0.8
μs
•
Continuous reverse voltage:
max. 75 V
•
Repetitive peak reverse voltage:
max. 85 V
•
Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
•
Low-leakage current applications in
surface mounted circuits.
DESCRIPTION
Epitaxial, medium-speed switching,
double diode in a small plastic
SOT323 (SC-70) SMD package.
The diodes are connected in series.
Marking code:
JY- = made in Hong Kong; JYt = made in Malaysia.
BAV199W
PINNING
PIN
1
2
3
anode
cathode
cathode; anode
DESCRIPTION
handbook, halfpage
3
3
1
2
1
Top view
2
MAM391
Fig.1 Simplified outline (SOT323; SC-70) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
−
single diode loaded; T
s
= 90
°C;
see Fig.2
−
−
square wave; T
j
= 25
°C
prior to surge;
see Fig.4
t
p
= 1
μs
t
p
= 1 ms
t
p
= 1 s
P
tot
T
stg
T
j
total power dissipation
storage temperature
junction temperature
single diode loaded; T
s
= 90
°C
double diode loaded; T
s
= 90
°C
−
−
−
−
−
−65
−
4
1
0.5
150
240
+150
150
A
A
A
mW
mW
°C
°C
double diode loaded; T
s
= 90
°C;
see Fig.2
−
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward
current
MAX.
UNIT
Per diode unless otherwise specified
V
RRM
V
R
I
F
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
85
75
135
110
500
V
V
mA
mA
mA
1999 May 11
2
NXP Semiconductors
Product data sheet
Low-leakage double diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
forward voltage
see Fig.3
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
I
R
reverse current
see Fig.5
V
R
= 75 V
V
R
= 75 V; T
j
= 150
°C
C
d
t
rr
diode capacitance
reverse recovery time
f = 1 MHz; V
R
= 0; see Fig.6
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA; see Fig.7
0.003
3
2
0.8
5
−
−
−
−
PARAMETER
CONDITIONS
TYP.
BAV199W
MAX.
UNIT
900
1 000
1100
1 250
mV
mV
mV
mV
nA
nA
pF
μs
80
−
3
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
CONDITIONS
T
s
= 90
°C
VALUE
400
UNIT
K/W
1999 May 11
3
NXP Semiconductors
Product data sheet
Low-leakage double diode
GRAPHICAL DATA
BAV199W
handbook, halfpage
300
MBK522
handbook, halfpage
300
MLB752 - 1
IF
(mA)
200
IF
(1)
(mA)
200
(2)
(1)
(2)
(3)
100
100
0
0
(1) Single diode loaded.
(2) Double diodes loaded.
100
Ts (°C)
200
0
0
0.4
0.8
1.2
V F (V)
1.6
(1) T
j
= 150
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
Fig.2
Maximum permissible continuous forward
current as a function of soldering point
temperature; per diode.
Fig.3
Forward current as a function of forward
voltage; per diode.
handbook, full pagewidth
10
2
MBG704
IFSM
(A)
10
1
10
−1
1
10
10
2
10
3
tp (μs)
10
4
Based on square wave currents.
T
j
= 25
°C
prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration per diode.
1999 May 11
4
NXP Semiconductors
Product data sheet
Low-leakage double diode
BAV199W
10
2
handbook, halfpage
IR
(nA)
MLB754
handbook, halfpage
2
MBG526
10
(1)
Cd
(pF)
1
1
10
1
10
2
(2)
0
10
3
0
5
10
15
0
50
100
150
T j (
o
C)
200
VR (V)
20
V
R
= 75 V.
(1) Maximum values.
(2) Typical values.
f = 1 MHz; T
j
= 25
°C.
Fig.5
Reverse current as a function of junction
temperature; per diode.
Fig.6
Diode capacitance as a function of reverse
voltage; per diode; typical values.
handbook, full pagewidth
tr
D.U.T.
10%
SAMPLING
OSCILLOSCOPE
R i = 50
Ω
VR
90%
tp
t
RS = 50
Ω
V = VR
IF x R S
IF
IF
t rr
t
(1)
MGA881
input signal
output signal
(1) I
R
= 1 mA.
Input signal: reverse pulse rise time t
r
= 0.6 ns; reverse voltage pulse duration t
p
= 5
μs;
duty factor
δ
= 0.05.
Oscilloscope: rise time t
r
= 0.35 ns.
Fig.7 Reverse recovery time test circuit and waveforms.
1999 May 11
5
Power technology
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