BAV23 series
Dual high-voltage switching diodes
Rev. 07 — 19 March 2010
Product data sheet
1. Product profile
1.1 General description
Dual high-voltage switching diodes, encapsulated in small Surface-Mounted
Device (SMD) plastic packages.
Table 1.
Product overview
Package
NXP
BAV23A
BAV23C
BAV23S
BAV23
SOT23
SOT23
SOT23
SOT143B
JEDEC
TO-236AB
TO-236AB
TO-236AB
-
dual common anode
dual common cathode
dual series
dual isolated
Configuration
Type number
1.2 Features and benefits
High switching speed: t
rr
50 ns
Low leakage current
Repetitive peak reverse voltage:
V
RRM
250 V
Low capacitance: C
d
2 pF
Small SMD plastic package
1.3 Applications
High-speed switching at high voltage
High-voltage general-purpose switching
1.4 Quick reference data
Table 2.
Symbol
Per diode
I
R
V
R
t
rr
[1]
Quick reference data
Parameter
reverse current
reverse voltage
reverse recovery time
[1]
Conditions
V
R
= 200 V
Min
-
-
-
Typ
-
-
-
Max
100
200
50
Unit
nA
V
ns
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
;
measured at I
R
= 1 mA.
NXP Semiconductors
BAV23 series
Dual high-voltage switching diodes
2. Pinning information
Table 3.
Pin
BAV23A
1
2
3
cathode (diode 1)
cathode (diode 2)
common anode
1
2
3
3
Pinning
Description
Simplified outline
Graphic symbol
1
2
006aab099
BAV23C
1
2
3
anode (diode 1)
anode (diode 2)
common cathode
1
2
3
3
1
2
006aab034
BAV23S
1
2
3
anode (diode 1)
cathode (diode 2)
cathode (diode 1),
anode (diode 2)
3
3
1
2
1
2
006aaa763
BAV23
1
2
3
4
cathode (diode 1)
cathode (diode 2)
anode (diode 2)
anode (diode 1)
1
2
1
2
006aab100
4
3
4
3
BAV23_SER_7
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 19 March 2010
2 of 13
NXP Semiconductors
BAV23 series
Dual high-voltage switching diodes
3. Ordering information
Table 4.
Ordering information
Package
Name
BAV23A
BAV23C
BAV23S
BAV23
-
plastic surface-mounted package; 4 leads
SOT143B
-
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 5.
BAV23A
BAV23C
BAV23S
BAV23
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
*V0
*V9
*V5
*L3
Type number
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
RRM
V
R
I
F
I
FRM
I
FSM
repetitive peak reverse
voltage
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak forward
current
square wave
t
p
= 1
s
t
p
= 100
s
t
p
= 10 ms
[3]
[1]
[2]
Parameter
Conditions
Min
-
-
-
-
-
Max
250
200
225
125
625
Unit
V
V
mA
mA
mA
-
-
-
9
3
1.7
A
A
A
BAV23_SER_7
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 19 March 2010
3 of 13
NXP Semiconductors
BAV23 series
Dual high-voltage switching diodes
Table 6.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per device
P
tot
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
T
amb
25
C
[4]
Min
-
-
65
65
Max
250
150
+150
+150
Unit
mW
C
C
C
Single diode loaded.
Double diode loaded.
T
j
= 25
C
prior to surge.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 7.
Symbol
Per device
R
th(j-a)
R
th(j-sp)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1]
Min
-
-
Typ
-
-
Max
500
360
Unit
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol
Per diode
V
F
I
R
C
d
t
rr
[1]
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery time
Conditions
I
F
= 100 mA
I
F
= 200 mA
V
R
= 200 V
V
R
= 200 V; T
j
= 150
C
f = 1 MHz; V
R
= 0 V
[1]
Min
-
-
-
-
-
-
Typ
-
-
-
-
-
-
Max
1.0
1.25
100
100
2
50
Unit
V
V
nA
A
pF
ns
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
;
measured at I
R
= 1 mA.
BAV23_SER_7
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 19 March 2010
4 of 13
NXP Semiconductors
BAV23 series
Dual high-voltage switching diodes
600
I
F
(mA)
400
006aab212
10
2
I
FSM
(A)
10
mbg703
200
(1)
(2)
(3)
(4)
1
0
0
0.4
0.8
1.2
V
F
(V)
1.6
10
−1
1
10
10
2
10
3
t
p
(μs)
10
4
(1) T
amb
= 150
C
(2) T
amb
= 85
C
(3) T
amb
= 25
C
(4) T
amb
=
40 C
Based on square wave currents.
T
j
= 25
C;
prior to surge
Fig 1.
Forward current as a function of forward
voltage; typical values
10
2
I
R
(μA)
10
1
10
−1
(3)
Fig 2.
Non-repetitive peak forward current as a
function of pulse duration; maximum values
006aab213
(1)
(2)
10
−2
10
−3
10
−4
10
−5
0
(4)
50
100
150
200
250
V
R
(V)
(1) T
amb
= 150
C
(2) T
amb
= 85
C
(3) T
amb
= 25
C
(4) T
amb
=
40 C
Fig 3.
Reverse current as a function of reverse voltage; typical values
BAV23_SER_7
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 19 March 2010
5 of 13
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