DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
MBD128
BAW101S
High voltage double diode
Product data sheet
2003 May 13
NXP Semiconductors
Product data sheet
High voltage double diode
FEATURES
•
Small plastic SMD package
•
High switching speed: max. 50 ns
•
High continuous reverse voltage: 300 V
•
Electrically insulated diodes.
APPLICATIONS
•
High voltage switching
•
Automotive
•
Communication.
DESCRIPTION
The BAW101S is a high-speed switching diode array with
two separate dice, fabricated in planar technology and
encapsulated in a small SOT363 plastic SMD package.
MARKING
TYPE NUMBER
BAW101S
Note
1.
∗
= p: Made in Hong Kong.
∗
= t: Made in Malaysia.
∗
= W: Made in China.
Fig.1
MARKING CODE
(1)
K2∗
1
Top view
handbook, halfpage
BAW101S
PINNING
PIN
1
2
3
4
5
6
anode 1
n.c.
cathode 2
anode 2
n.c.
cathode 1
DESCRIPTION
6
5
4
6
5
4
2
3
MBL892
1
2
3
Simplified outline (SOT363) and symbol.
2003 May 13
2
NXP Semiconductors
Product data sheet
High voltage double diode
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
V
R
V
RRM
I
F
I
FRM
I
FSM
P
tot
T
stg
T
j
T
amb
Note
1. Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm
2
.
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
BR(R)
V
F
I
R
t
rr
C
d
Note
1. Pulse test: pulse width = 300
µs; δ
= 0.02.
reverse breakdown voltage
forward voltage
reverse current
reverse recovery time
diode capacitance
I
R
= 100
µA
I
F
= 100 mA; note 1
V
R
= 250 V
V
R
= 250 V; T
amb
= 150
°C
300
−
−
−
PARAMETER
CONDITIONS
MIN.
continuous reverse voltage
series connection
repetitive peak reverse voltage
series connection
continuous forward current
repetitive peak forward current
non-repetitive peak forward
current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
square wave; T
j
= 25
°C
prior to surge;
t = 1
µs
T
amb
= 25
°C;
note 1
single diode loaded; note 1; see Fig.2
double diode loaded; note 1; see Fig.2
−
−
−
−
−
−
−
−
−
−65
−
−65
PARAMETER
CONDITIONS
MIN.
BAW101S
MAX.
UNIT
300
600
300
600
250
140
625
4.5
350
+150
150
+150
V
V
V
V
mA
mA
mA
A
mW
°C
°C
°C
MAX.
−
1.1
150
50
50
2
UNIT
V
V
nA
µA
ns
pF
when switched from I
F
= 30 mA to I
R
= 30 mA;
−
R
L
= 100
Ω;
measured at I
R
= 3 mA
V
R
= 0 V; f = 1 MHz
−
2003 May 13
3
NXP Semiconductors
Product data sheet
High voltage double diode
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
R
th j-a
Notes
1. One or more diodes loaded.
2. Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm
2
.
GRAPHICAL DATA
MLE057
BAW101S
PARAMETER
thermal resistance from junction to soldering point
thermal resistance from junction to ambient
CONDITIONS
note 1
note 2
VALUE
255
357
UNIT
K/W
K/W
handbook, halfpage
300
handbook, halfpage
600
IF
MBG384
IF
(mA)
200
(mA)
(1)
(1)
(2)
(3)
400
100
(2)
200
0
0
50
100
200
150
Tamb (°C)
(2) Double diode loaded.
0
0
1
VF (V)
2
(1) Single diode loaded.
Device mounted on an FR4 printed-circuit board.
Cathode-lead mounting pad = 1 cm
2
.
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
(1) T
j
= 150
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
Fig.3
Forward current as a function of forward
voltage.
2003 May 13
4
NXP Semiconductors
Product data sheet
High voltage double diode
BAW101S
handbook, full pagewidth
10
2
MBG703
IFSM
(A)
10
1
10
−1
1
Based on square wave currents.
T
j
= 25
°C
prior to surge.
10
10
2
10
3
tp (µs)
10
4
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
10
2
handbook, halfpage
IR
(µA)
10
MLE058
handbook, halfpage
0.6
MLE059
Cd
(pF)
0.5
(1)
(2)
1
0.4
10
−1
0.3
10
−2
0
50
100
150
Tj (°C)
200
0.2
0
2
4
6
8
VR (V)
10
(1) V
R
= V
RMAX
: maximum values.
(2) V
R
= V
RMAX
: typical values.
f = 1 MHz; T
j
= 25
°C.
Fig.5
Reverse current as a function of junction
temperature.
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
2003 May 13
5
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