BB170
VHF variable capacitance diode
Rev. 1 — 25 March 2013
Product data sheet
1. Product profile
1.1 General description
The BB170 is a variable capacitance diode, fabricated in planar technology, and
encapsulated in the SOD323 (SC-76) very small SMD plastic package.
1.2 Features and benefits
Excellent linearity
Very small SMD plastic package
C
d(28V)
= 2.6 pF; C
d(1V)
to C
d(28V)
ratio = 15
Low series resistance
1.3 Applications
Voltage Controlled Oscillators (VCO)
2. Pinning information
Table 1.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
1
2
Symbol
sym008
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 2.
Ordering information
Package
Name
BB170
SC-76
Description
plastic surface-mounted package; 2 leads
Version
SOD323
Type number
NXP Semiconductors
BB170
VHF variable capacitance diode
4. Marking
Table 3.
BB170
Marking
Marking code
4H
Type number
5. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F
T
stg
T
j
Parameter
reverse voltage
forward current
storage temperature
junction temperature
Conditions
Min
-
-
55
55
Max
30
20
+150
+125
Unit
V
mA
C
C
6. Characteristics
Table 5.
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol
I
R
r
s
C
d
Parameter
reverse current
diode series resistance
diode capacitance
Conditions
V
R
= 30 V
V
R
= 30 V; T
j
= 85
C
f = 100 MHz; C
d
= 12 pF
f = 1 MHz
V
R
= 1 V
V
R
= 28 V
C
d(1V)
/C
d(28V)
[1]
[2]
[2]
[1]
[1]
Min
-
-
-
Typ Max Unit
-
-
-
10
200
0.9
nA
nA
36.8 -
2.4
2.6
14.5 15
41.8 pF
2.75 pF
-
diode capacitance ratio
(1 V to 28 V)
f = 1 MHz
See
Figure 2.
See
Figure 1
and
Figure 3.
BB170
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 25 March 2013
2 of 8
NXP Semiconductors
BB170
VHF variable capacitance diode
50
C
d
(pF)
40
mlc266
30
20
10
0
10
−1
1
10
V
R
(V)
10
2
f = 1 MHz; T
j
= 25
C.
Fig 1.
10
3
I
R
(nA)
10
2
Diode capacitance as a function of reverse voltage; typical values.
001aae541
10
−2
TC
Cd
(K
−1
)
10
−3
001aag774
10
10
−4
1
0
20
40
60
80
T
j
(°C)
100
10
−5
10
−1
1
10
V
R
(V)
10
2
T
j
= 0
C
to 85
C.
Fig 2.
Reverse current as a function of junction
temperature; maximum values.
Fig 3.
Diode capacitance temperature coefficient as a
function of reverse voltage; typical values.
BB170
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 25 March 2013
3 of 8
NXP Semiconductors
BB170
VHF variable capacitance diode
7. Package outline
Plastic surface-mounted package; 2 leads
SOD323
D
A
E
X
H
D
v
M
A
Q
1
2
b
p
A
A
1
(1)
c
L
p
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A
1
max
0.05
b
p
0.40
0.25
c
0.25
0.10
D
1.8
1.6
E
1.35
1.15
H
D
2.7
2.3
L
p
0.45
0.15
Q
0.25
0.15
v
0.2
Note
1. The marking bar indicates the cathode
OUTLINE
VERSION
SOD323
REFERENCES
IEC
JEDEC
JEITA
SC-76
EUROPEAN
PROJECTION
ISSUE DATE
03-12-17
06-03-16
Fig 4.
BB170
Package outline SOD323 (SC-76)
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 25 March 2013
4 of 8
NXP Semiconductors
BB170
VHF variable capacitance diode
8. Abbreviations
Table 6.
Acronym
SMD
VHF
Abbreviations
Description
Surface Mounted Device
Very High Frequency
9. Revision history
Table 7.
BB170 v.1
Revision history
Release date
20130325
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
Document ID
BB170
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 25 March 2013
5 of 8
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