IRGPS4067DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
•
•
•
•
•
•
•
•
•
C
Low V
CE (on)
Trench IGBT Technology
Low Switching Losses
5µs SCSOA
Square RBSOA
100% of The Parts Tested for I
LM
Positive V
CE (on)
Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode
Tighter Distribution of Parameters
Lead-Free, RoHS Compliant
V
CES
= 600V
I
C(Nominal)
= 120A
G
E
t
SC
≥
5µs, T
J(max)
= 175°C
n-channel
C
V
CE(on)
typ. = 1.70V
Benefits
•
High Efficiency in a Wide Range of Applications
•
Suitable for a Wide Range of Switching Frequencies due
to Low V
CE (ON)
and Low Switching Losses
•
Rugged Transient Performance for Increased Reliability
•
Excellent Current Sharing in Parallel Operation
•
Low EMI
G
Gate
E
C
G
Super-247
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
NOMINAL
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current, V
GE
= 15V
Clamped Inductive Load Current, V
GE
= 20V
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Max.
Units
V
g
160
g
120
600
240
c
360
480
240
160
480
±20
±30
750
375
-55 to +175
°C
W
V
A
d
Continuous Gate-to-Emitter Voltage
Thermal Resistance
R
θJC
(IGBT)
R
θJC
(Diode)
R
θCS
R
θJA
f
Thermal Resistance Junction-to-Case-(each Diode)
f
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.20
0.63
–––
40
Units
°C/W
1
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IRGPS4067DPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
∆V
(B R)CES
/∆T
J
Min.
600
—
—
—
—
4.0
—
—
—
—
—
—
—
Typ.
—
0.27
1.70
2.15
2.20
—
-17
77
1.0
2.3
2.4
1.9
—
Max.
—
—
2.05
—
—
6.5
—
—
150
—
3.0
—
±400
Units
V
V/°C
V
V
mV/°C
S
µA
mA
V
nA
Conditions
V
GE
= 0V, I
C
= 100µA
Collector-to-Emitter Brea ow Volta e
kd n
g
T emperatureCoeff. of B reakdow Voltage
n
e
V
GE
= 0V, I
C
= 4.0mA (25°C-175°C)
I
C
= 120A, V
GE
= 15V, T
J
= 25°C
I
C
= 120A, V
GE
= 15V, T
J
= 150°C
I
C
= 120A, V
GE
= 15V, T
J
= 175°C
V
CE
= V
GE
, I
C
= 5.6mA
V
CE
= V
GE
, I
C
= 5.6mA (25°C - 175°C)
V
CE
= 50V, I
C
= 120A
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
I
F
= 120A
I
F
= 120A, T
J
= 175°C
V
GE
= ±20V
V
CE(on)
V
GE(th)
∆V
GE (th)
/∆T J
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
gfe
I
CES
V
FM
I
GES
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Erec
t
rr
I
rr
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
240
70
90
5750
3430
9180
80
70
190
40
7740
4390
12130
80
75
230
55
7750
550
225
Max.
360
h
Units
I
C
= 120A
nC
V
GE
= 15V
V
CC
= 400V
Conditions
105
135
7990
4360
12350
100
125
220
60
—
—
—
—
—
—
—
—
—
—
I
C
= 120A, V
CC
= 400V, V
GE
= 15V
µJ
R
G
= 4.7Ω, L = 66µH, T
J
= 25°C
E nergy los s es include tail & diode revers e recovery
I
C
= 120A, V
CC
= 400V, V
GE
= 15V
ns
R
G
= 4.7Ω, L = 66µH, TJ = 25°C
I
C
= 120A, V
CC
= 400V, V
GE
=15V
µJ
R
G
=4.7Ω, L=66µH, T
J
= 175°C
E nergy los s es include tail & diode revers e recovery
I
C
= 120A, V
CC
= 400V, V
GE
= 15V
ns
R
G
= 4.7Ω, L = 66µH
T
J
= 175°C
pF
V
GE
= 0V
V
CC
= 30V
f = 1.0Mhz
T
J
= 175°C, I
C
= 480A
V
CC
= 480V, Vp =600V
Rg = 4.7Ω, V
GE
= +20V to 0V
FULL SQUARE
5
—
—
—
—
500
130
36
—
—
—
—
µs
µJ
ns
A
V
CC
= 400V, Vp =600V
Rg = 4.7Ω, V
GE
= +15V to 0V
T
J
= 175°C
V
CC
= 400V, I
F
= 120A
V
GE
= 15V, Rg = 4.7Ω, L =100µH
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 66µH, R
G
= 4.7Ω, tested in production I
LM
≤
400A.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
R
θ
is measured at T
J
of approximately 90°C.
Calculated continuous current based on maximum allowable junction temperature. Package IGBT current limit is 195A. Package diode current
limit is 120A. Note that current limitations arising from heating of the device leads may occur.
Maximum limits are based on statistical sample size characterization.
2
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IRGPS4067DPbF
220
200
180
Load Current ( A )
160
140
120
100
I
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 375W
Square Wave:
V
CC
80
60
40
20
0.1
1
f , Frequency ( kHz )
10
100
Diode as specified
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
250
800
700
200
600
500
Ptot (W)
25
50
75
100
T C (°C)
125
150
175
150
IC (A)
400
300
200
100
100
50
0
0
0
20
40
60
80 100 120 140 160 180
T C (°C)
Fig. 2
- Maximum DC Collector Current vs.
Case Temperature
1000
Fig. 3
- Power Dissipation vs. Case
Temperature
1000
100
10µsec
100
IC (A)
100µsec
10
1msec
IC A)
10
1
10000
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
VCE (V)
DC
1000
10
100
VCE (V)
1000
Fig. 4
- Forward SOA
T
C
= 25°C, T
J
≤
175°C; V
GE
=15V
3
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Fig. 5
- Reverse Bias SOA
T
J
= 175°C; V
GE
=20V
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IRGPS4067DPbF
350
300
250
350
300
250
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
ICE (A)
ICE (A)
200
150
100
50
0
0
1
2
3
4
5
6
200
150
100
50
0
7
8
9
10
0
2
4
6
8
10
VCE (V)
VCE (V)
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80µs
350
300
250
ICE (A)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80µs
600
500
-40°C
25°C
175°C
150
100
50
0
0
2
4
IF (A)
10
200
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
400
300
200
100
0
6
8
0.0
1.0
2.0
3.0
VF (V)
4.0
5.0
6.0
VCE (V)
Fig. 8
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 80µs
25
Fig. 9
- Typ. Diode Forward Characteristics
tp = 80µs
25
20
20
VCE (V)
VCE (V)
15
ICE = 60A
ICE = 120A
ICE = 195A
15
ICE = 60A
ICE = 120A
ICE = 195A
10
10
5
5
0
5
10
VGE (V)
15
20
0
5
10
VGE (V)
15
20
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= -40°C
4
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Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 25°C
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IRGPS4067DPbF
25
IC, Collector-to-Emitter Current (A)
350
300
250
200
150
100
50
0
20
T J = -40°C
T J = 25°C
T J = 175°C
VCE (V)
15
ICE = 60A
ICE = 120A
ICE = 195A
10
5
0
5
10
VGE (V)
15
20
3
4
5
6
7
8
9
10
11
12
VGE, Gate-to-Emitter Voltage (V)
Fig. 12
- Typical V
CE
vs. V
GE
T
J
= 175°C
30000
25000
20000
Energy (µJ)
Fig. 13
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10µs
1000
td OFF
EON
15000
10000
5000
0
0
50
100
150
200
250
EOFF
Swiching Time (ns)
100
tdON
tF
tR
10
0
50
100
150
200
250
IC (A)
IC (A)
Fig. 14
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 66µH; V
CE
= 400V, R
G
= 4.7Ω; V
GE
= 15V
30000
25000
20000
Energy (µJ)
Fig. 15
- Typ. Switching Time vs. I
C
T
J
= 175°C; L = 66µH; V
CE
= 400V, R
G
= 4.7Ω; V
GE
= 15V
10000
Swiching Time (ns)
1000
tdOFF
tR
15000
EON
10000
5000
0
0
20
40
60
80
100
EOFF
td ON
100
tF
10
0
20
40
60
80
100
RG (
Ω
)
Rg (Ω)
Fig. 16
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 66µH; V
CE
= 400V, I
CE
= 120A; V
GE
= 15V
5
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Fig. 17
- Typ. Switching Time vs. R
G
T
J
= 175°C; L = 66µH; V
CE
= 400V, I
CE
= 120A; V
GE
= 15V
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March 27, 2014
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