2PB1424
20 V, 3 A PNP low V
CEsat
(BISS) transistor
Rev. 02 — 15 January 2007
Product data sheet
1. Product profile
1.1 General description
PNP low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a medium power
SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package.
NPN complement: 2PD2150.
1.2 Features
I
I
I
I
I
Low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High collector current gain (h
FE
) at high I
C
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I
I
I
I
I
I
DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Power switches (e.g. motors, fans)
Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
I
CM
V
CEsat
[1]
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation voltage
single pulse;
t
p
≤
1 ms
I
C
=
−2
A;
I
B
=
−0.1
A
[1]
Conditions
open base
Min
-
-
-
-
Typ
-
-
-
−0.2
Max
−20
−3
−5
−0.5
Unit
V
A
A
V
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
NXP Semiconductors
2PB1424
20 V, 3 A PNP low V
CEsat
(BISS) transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
emitter
collector
base
3
2
1
3
1
006aaa231
Simplified outline
Symbol
2
3. Ordering information
Table 3.
Ordering information
Package
Name
2PB1424
SC-62
Description
plastic surface-mounted package; collector pad for
good heat transfer; 3 leads
Version
SOT89
Type number
4. Marking
Table 4.
2PB1424
Marking codes
Marking code
M1
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j
T
amb
T
stg
[1]
[2]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
open emitter
open base
open collector
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
[1]
[2]
Min
-
-
-
-
-
-
-
-
−65
−65
Max
−20
−20
−6
−3
−5
0.5
2
150
+150
+150
Unit
V
V
V
A
A
W
W
°C
°C
°C
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
2PB1424_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 15 January 2007
2 of 13
NXP Semiconductors
2PB1424
20 V, 3 A PNP low V
CEsat
(BISS) transistor
2.4
P
tot
(W)
1.6
(1)
006aaa943
0.8
(2)
0
−75
−25
0
25
75
125
175
T
amb
(°C)
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB, standard footprint
Fig 1. Power derating curves
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1]
[2]
Min
-
-
Typ
-
-
Max
250
62
Unit
K/W
K/W
[1]
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
2PB1424_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 15 January 2007
3 of 13
NXP Semiconductors
2PB1424
20 V, 3 A PNP low V
CEsat
(BISS) transistor
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle =
1
0.75
0.5
0.33
0.1
0.05
10
0.02
0.01
1
0
0.2
006aaa944
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10
2
duty cycle =
Z
th(j-a)
(K/W)
10
1
0.75
0.5
0.2
0.1
0.05
0.02
1
0.01
0
0.33
006aaa945
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
2PB1424_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 15 January 2007
4 of 13
NXP Semiconductors
2PB1424
20 V, 3 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
I
CBO
I
EBO
h
FE
V
CEsat
f
T
C
ib
C
ob
[1]
Conditions
V
CB
=
−20
V; I
E
= 0 A
V
EB
=
−5
V; I
C
= 0 A
V
CE
=
−2
V; I
C
=
−0.1
A
I
C
=
−2
A; I
B
=
−0.1
A
V
CE
=
−2
V; I
E
= 0.5 A;
f = 100 MHz
V
EB
=
−5
V; I
E
= i
e
= 0 A;
f = 1 MHz
V
CB
=
−10
V; I
E
= i
e
= 0 A;
f = 1 MHz
[1]
Min
-
-
180
-
-
-
-
Typ
-
-
-
−0.2
125
130
37
Max
−0.1
−0.1
390
−0.5
-
-
-
Unit
µA
µA
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
transition frequency
common-base input
capacitance
common-base output
capacitance
V
MHz
pF
pF
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
2PB1424_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 15 January 2007
5 of 13
京公网安备 11010802033920号
EEWORLD
