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2PD2150_15_15

Description
20 V, 3 A NPN low VCEsat (BISS) transistor
File Size114KB,13 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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2PD2150_15_15 Overview

20 V, 3 A NPN low VCEsat (BISS) transistor

2PD2150
20 V, 3 A NPN low V
CEsat
(BISS) transistor
Rev. 02 — 2 January 2007
Product data sheet
1. Product profile
1.1 General description
NPN low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a medium power
SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: 2PB1424.
1.2 Features
I
I
I
I
I
Low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High collector current gain (h
FE
) at high I
C
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I
I
I
I
I
I
DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Power switches (e.g. motors, fans)
Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
I
CM
V
CEsat
[1]
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation voltage
single pulse;
t
p
1 ms
I
C
= 2 A; I
B
= 0.1 A
[1]
Conditions
open base
Min
-
-
-
-
Typ
-
-
-
0.2
Max
20
3
5
0.5
Unit
V
A
A
V
Pulse test: t
p
300
µs; δ ≤
0.02.
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